• Economic and Environmental Geology
• /
• v.27 no.6
• /
• pp.549-556
• /
• 1994

Geochemical studies on gold-bearing quartz veins and wallrocks from the Okgye mine were carried out in order to investigate the primary dispersion patterns of gold and associated elements and to quantify the dispersion width of elements with distance from the gold-bearing quartz veins. Gold-bearing quartz veins occur in basaltic trachyandesite of unknown age. Enrichment of $k_2O$, MnO, Au, As, Rb, Sb, Pb, Zn, Cu, Ag and Cd, and depletion of $Na_2O$ and Sr are found in altered wallrocks. The ratio of $k_2O(k_2O+Na_2O)$, alteration index for trace elements, and Rb/Sr in altered wallrocks are increased, whereas Sr/CaO ratio is decreased with approach to the gold-bearing quartz veins. The widths of primary dispersion range from 17 cm to 155 cm. The relative dispersion width increases in order Au=Cu=Zn=Ag=Cd$k_2O$=Rb and Ba< $Na_2O$ $Na_2O$, As, Sb, Sr, Pb, Au, Cu, Zn, Ag and Cd, and a quadratic function for $k_2O$, MnO, Rb and Ba.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.307-310
• /
• 1998

In this paper, $Al_2$O$_3$/MgO belayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(Plasma Display Panel). $Al_2$O$_3$/MgO belayer were improved of roughness and it were condensed by annealing, and the result of XPS analysis for $Al_2$O$_3$/MgO belayer unchanged binding energy. To investigate electric characteristics, discharge properties of $Al_2$O$_3$/MgO belayer were compared with discharge minimum voltage for MgO monolayer through Ar discharge experiments.

• Journal of the Korean Ceramic Society
• /
• v.39 no.6
• /
• pp.528-534
• /
• 2002

CaO ceramics were prepared by conventional sintering process and their hydration behaviors were evaluated by measuring weight increment on saturated water vapor pressure at ambient temperature. CaCO$_3$ and limestone were used as CaO source materials and $Al_2$O$_3$, MgO and SiO$_2$ were added as sintering agents. $Al_2$O$_3$ was a liquid phase sintering agent to increase densification and grain growth rates, whereas MgO and SiO$_2$, densification and grain growth inhibitors. Regardless of composition, all of the prepared CaO ceramics showed the improved hydration resistance as bulk density increased. Especially, when bulk density was more than 3.0 g/㎤, there was no weight increment after 120 h of hydration. Therefore, to decrease contact area between CaO and water vapor by increasing bulk density with the $Al_2$O$_3$ sintering additive was effective for the improvement of CaO hydration resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.140-142
• /
• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• Korean Journal of Materials Research
• /
• v.17 no.3
• /
• pp.125-131
• /
• 2007

[ $TiO_{2}-solution$ ] was aaded in $SiO_{2}-solution$ by various composition. $SiO_{2}-TiO_{2}$ thin films were obtained by the dip-coating method on the $SiO_{2}$ glass substrates, and then heat-treated at various temperature. Nano-size $TiO_{2}$ particles dispersed $SiO_{2}-TiO_{2}$ films showed absorption peak by quantum size effect at short wavelength region $350{\sim}400nm$, which made them good candidates for non-linear optical materials and photo-catalytic materials. The thickness of $SiO_{2}-TiO_{2}$ films were $300{\sim}430nm$. The contact angle of $SiO_{2}-TiO_{2}$ films for water was $5.3{\sim}47.9^{\circ}$, and therefore it is clear that $SiO_{2}-TiO_{2}$ films have super hydrophilic properties and the self-cleaning effects.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.181-182
• /
• 2000

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5-ZnO-BaO$ and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP(Plasma Display Panel) were investigated. As a transparent dielectric materials for front panel, $PbO-SiO_2-B_2O_3$ glass showed good dielectric properties, high transparency and proper thermal expansion matching to soda-lime glass substrate. And the reflective dielectric materials for back panel were prepared from parent glass of $SiO_2-ZnO-B_2O_3$ system and oxide filler. It was found that these glass-ceramics are useful materials for reflective dielectric layers, as those have a similar thermal expansion to soda-lime glass plate, high reflectance, low sintering temperature.

• Journal of Information Display
• /
• v.2 no.1
• /
• pp.38-42
• /
• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Bulletin of the Korean Chemical Society
• /
• v.21 no.9
• /
• pp.913-918
• /
• 2000

Vanadium oxide catalyst supported on TiO2-ZrO2 has been prepared by adding Ti(OH)4-Zr(OH)4 powder to an aqueous solution of ammonium metavanadate followed by drying and calcining at high temperatures. The char-acterization ofthe prepared catalysts was performed using solid-state 51V NMR and FTIR.In thecase ofcalci-nation temperature at 773 K, vanadium oxide was in a highly dispersed state for the samples containing low loading V2O5 below 25 wt %, but for samplescontaining high loading V2O5 equal to or above 25 wt %, vana-dium oxidewas well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of TiO2-ZrO2.The ZrV2O7 compound was formed through the reactionof V2O5 and ZrO2 at 773-973 K, where-as the V3Ti6O17 compound was formedthrough the reaction of V2O5 and TiO2 at 973-1073 K. The V3Ti6O17 compound decomposed to V2O5 and TiO2 at 1173 K, which were confirmed by FTIR and 51V NMR.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.259-265
• /
• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• Ocean and Polar Research
• /
• v.26 no.2
• /
• pp.199-205
• /
• 2004

$SiO_2$ and CaO are added to decrease the smelting temperature in the reduction-smelting method for manganese nodule processing. These elements are components of the manganese nodules and might be very important controlling factors in the processing due to the locally variable content. The 707 chemical data of manganese nodules acquired from 1994 to 2001 in KODOS(Korea Deep Ocean Survey) area were used for the hierarchical cluster analysis. The chemical data were classified by the morphological types, and the averages of the chemical data for each station were classified by the facies groups and the localities. All data are plotted on the $SiO_2-CaO-MnO$ phase diagram at $1773^{\circ}K$ to compare with the best compositional area in the nodule smelting. Variations and distributions of $SiO_2$ and CaO in KODOS nodules were also reviewed. The mineral phases assigned by the cluster analysis are CFA(Carbonate Fluorapatite), Fe-oxide, Al-silicate, and Mn-oxide. MnO contents are generally higher than $SiO_2$ contents in most of the morphological types except for the Is- and It-type. The Dt- and Tt-type show wider range and the E-types show high anomaly in their CaO contents. The stations which belong to facies group A and B show generally higher MnO contents than $SiO_2$ contents, however, the stations of facies group C and D show wide range in their MnO and $SiO_2$ contents. It seems to be very important to control the $SiO_2$ contents in the processing because of the wide range in the northern area. The additions of approximately 10 wt.% CaO and 10 wt.% $SiO_2$ are recommended for the northern area, whereas, the additions of approximately 10 wt.% CaO and 20 wt.% $SiO_2$ are recommended for the southern area.