• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.752-755
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• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.2955-2960
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• 2012

Product ion yields in the in- and post-source decays of three peptide ions, $[Y_5X+H]^+$ (X = Y (tyrosine), K (lysine), and R (arginine)), generated by matrix-assisted laser desorption ionization (MALDI) were measured at six wavelengths, 307, 317, 327, 337, 347, and 357 nm, using ${\alpha}$-cyano-4-hydroxycinnamic acid (CHCA) and 2,5-dihydroxybenzoic acid (DHB) as the matrices. The temperatures of the early and late plumes generated by MALDI were estimated via kinetic analysis of the product ion yield data. For both matrices, the temperature drop (${\Delta}T$), i.e. the difference in the temperature between the early and late plumes, displayed negative correlation with the absorption coefficient. This was in agreement with the previous reasoning that deeper laser penetration and larger amount of material ablation arising from smaller absorption coefficient would result in larger extent of expansion cooling. The results support the postulation of the expansion cooling occurring in the plume presented previously.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• Nuclear Engineering and Technology
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• 제23권4호
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• pp.420-425
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• 1991

SNU 1.5-MV 직렬형 반데그라프 가속기의 헬륨음이온원으로서 Rb 전하교환기를 제작하였다. 교환기의 최적운전조건을 결정하기 위해 특성실험을 수행하였다. Duoplasmatron 이온원에서 인출된 1~10 keV 에너지의 첼륨양이온빔을 Rb 증기속에 통과시킴으로써 2 단계 전하교환반응, 즉 $He^{+}\;+\;Rb\;{\rightarrow}\;He^{\circ\ast}\;+\;Rb^{+}\;과\;He^{\circ\ast}\;+\;Rb\;{\rightarrow}\;He^{-}\;+\;Rb^{+}$에 의해 헬륨음이온을 얻었다 실험결과로부터 헬륨음이온의 최대생성률이 헬륨양이온에너지가 7 keV일때 얻어짐을 알 수 있었다. Oven과 Canal의 최적온도는 각각 $370^{\circ}C{\;}와\;95^{\circ}C$로 결정되었다. 최적동작조건하에서 최대 헬륨음이온 생성률은 $2.42\pm002\;%$이었다. 본 전하교환기는 헬륨음이온생성에 효과적인 장치임이 입증되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.170-170
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• 2000

Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.

• 한국분말재료학회지
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• 제17권6호
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• pp.456-463
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• 2010

This paper describes the results of the application of Cr-Diamond-like carbon (DLC) films for efficiency improvement through surface modification of spur gear parts in the hydraulic gear pump. Cr-DLC films were successfully deposited on SCM 415 substrates by a hybrid coating process using linear ion source (LIS) and magnetron sputtering method. The characteristics of the films were systematically investigated using FE-SEM, nano-indentation, sliding tester and AFM instrument. The microstructure of Cr-DLC films turned into the dense and fine grains with relatively preferred orientation. The thickness formed in our Cr buffer layer and DLC coating layer were obtained the 487 nm and $1.14\;{\mu}m$. The average friction coefficient of Cr-DLC films considerably decreased to 0.15 for 0.50 of uncoated SCM415 material. The hardness and surface roughness of Cr-DLC films were measured 20 GPa and 10.76 nm, respectively. And then, efficiency tests were performed on the hydraulic gear pump to investigate the efficiency performance of the Cr-DLC coated spur gear. The experimental results show that the volumetric and mechanical efficiency of hydraulic gear pump using the Cr-DLC spur gear were improved up to 2~5% and better efficiency improvement could be attributed to its excellent microstructure, higher hardness, and lower friction coefficient. This conclusion proves the feasibility in the efficiency improvement of hydraulic gear pump for industrial applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.2160-2162
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• 1998

In this paper a new high voltage dc power supply is proposed. The proposed power supply is suitable for a load having frequent short circuit. A spark down occurs frequently in a load such as ion source. To protect the ion source and power supply in case of spark down the fast switch off of the power supply is necessary. The proposed power supply scheme improves the performance, efficiency and reliability of the conventional power supply.

• 한국세라믹학회지
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• 제55권4호
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• pp.307-324
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• 2018

Rechargeable lithium-ion batteries (LIBs) have been rapidly expanding from IT based applications to uses in electric vehicles (EVs), smart grids, and energy storage systems (ESSs), all of which require low cost, high energy density and high power density. The increasing demand for LIBs has resulted in increasing price of the lithium source, which is a major obstacle to wider application. To date, the possible depletion of lithium resources has become relevant, giving rise to the interest in Na-ion batteries (NIBs) as promising alternatives to LIBs. A lot of transition metal compounds based on conversion-alloying reaction have been extensively investigated to meet the requirement for the anodes with high energy density and long life-time. In-depth understanding the electrochemical reaction mechanisms for the transition metal compounds makes it promising negative anode for NIBs and provides feasible strategy for low cost and large-scale energy storage system in the near future.