• Journal of Korean Vacuum Science & Technology
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• v.7 no.1
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• pp.1-7
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• 2003

The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

• Archives of Pharmacal Research
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• v.16 no.2
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• pp.152-154
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• 1993

By using N-bromophthalimide (NBP) as halonium ion source for the Hofmann rearrangement, a series of primary amide could be ocnverted to the corresponding cabamate in excellent yields. So NBP was throught to be very effective and practical halonium ion source for the Hofmann rearrangement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.216.1-216.1
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• 2014

Closed drift ion source는 그 특성으로 인하여 강판 표면처리, 금속 표면 산화막 형성, 폴리머 혹은 기타 표면 개질 등 다양한 분야에서 사용이 되고 있다. 다양한 환경에서 사용 되는 소스의 특성으로 인하여 각기 다른 공정에 대한 최적의 특성이 요구 되며, 이러한 공정 환경에 맞춘 소스를 설계하기 위해서 ion source내 전극의 구조 및 자기장 세기 등 이온소스의 구조적 특성에 대한 연구가 필요하게 된다. 본 연구에서는 선형 이온소스의 구조 설계를 위한 실험을 소형(이온빔 인출 슬릿 직경: 60 mm) 이온빔 인출 장치를 제작하여 전극 구조에 따른 방전 특성을 우선적으로 평가를 실시하여 소형 이온빔 인출 장치에서 도출된 결과를 바탕으로 0.3 m급 linear closed drift ion source 설계에 대한 변수를 조사 하였다. 실험은 양극-음극(C-A) 간 간격 및 음극 슬릿(C-C) 간격 그리고 자기장 세기 조건에서 방전 전류 및 인출 이온빔 전류량 측정하였으며, 이 결과를 전산모사 결과와 비교 하였다. 방전전압 1~5 kV, 가스유량 10~50 sccm 조건에서 Ar 이온빔 방전 특성을 평가한 결과, 양극-음극(C-A) 간격이 넓을수록, 음극-음극(C-C) 간격이 좁을수록 방전 전류량이 증가함을 확인 하였다. 또한, 공정 가스 압력 및 자기장 세기 변화에 따른 1~5 kV의 방전 전압에 대한 방전 특성의 관찰 결과, 압력 및 자기장 변화에 따라서 방전 전류의 변화를 관찰 할 수 있었으며, 이에 대한 결과를 통하여 이온 소스 구조 내부에서의 방전 영역에 대한 압력과 자기장 세기에 대한 영향을 분석 할 수 있었다.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.47-51
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• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.220-220
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• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.949-950
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.947-948
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• 2008

• Analytical Science and Technology
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• v.5 no.2
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• pp.169-176
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• 1992

Analytical detection limits and Relative Ion Yield (RIY) by a jet type ion source glow discharge mass spectrometer(GD/MS) have been measured. With a jet type ion source, the sample loss rate for a Cu sample is 0.23 mg/min with 0.1 L/min gas flow rate and 0.11 mg/min with no gas flow rate. However, the ion intensity of Cu does not change significantly with thee variation of the gas flow rate. The RIY values obtained from the calibration curves of the six copper based standards were between 0.57 of Fe and 3.5 of Cr. The detection limits of most elements were in the range of 0.9 and 2.0 ppm when the glow discharge was operated at 4 mA, 1000V.

• Nuclear Engineering and Technology
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• v.23 no.4
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• pp.438-443
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• 1991

The operational characteristics of the duoplasmatron ion source are investigated in order to obtain the maximum achievable extraction current of the $He^+$ ion beam with the small divergence. Under the variations of the gas pressure, the arc current, the magnet current and the extraction voltage of the ion source, the change of the extracted $He^+$ ion beam current is observed. An oxide filament, the mixture of BaO and SrO coated on Ni meshes, is used as the hot cathode, and its average lifetime is about 100 hours. The extraction current is linearly proportional to the arc current. As the magnet current of the ion source is increased, the extraction current increases, but the beam divergence becomes larger. The maximum extraction current is obtained at the source pressure of 0.084 Torr. The extraction current is proportional to the extraction voltage raised to the power of 3/2 as estimated from theory. At the extraction voltage of 5.72 kV, the maximum extraction current of 50 $\mu$A is obtained under the optimized extraction condition.