• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.903-906
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• 2003

Doping a small amount of a phosphorescent dye into an organic light-emitting diodes(OLED) can lead to a significant improvement in the device properties. The fluorescent host materials like TAZ, CBP have been used, but have a problem of rapid decay of efficiency at high current densities. To alleviate this problem, phosphorescent host was introduced. The whole configuration of OELD fabricated was ITO/a-NPD(50nm)/Zn $cluster:Ir(ppy)_{3}(30nm)/BCP{(10nm)/Alq_{3}(20nm)$ /Al:Li. The OLED showed high luminance (> 50,000 $cd/m^{2}$ ) and external efficiency(5.7%). At higher current densities, rapid decay of external quantum efficiency or host emission, which was frequently observed in the fluorescent host system, were not observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.824-827
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• 2004

High performance green $Ir(ppy)_3$-based phosphorescent OLEDs (PHOLEDs) have been fabricated by organic vapor phase deposition ($OVPD^{TM}$). In addition to demonstrating both efficiency and operational device lifetime comparable to devices built by vacuum thermal evaporation, we report on the controllability and stability of the $OVPD^{TM}$ process. Specifically, run-to-run and day-to-day deposition rate reproducibility of better than 2 % for three consecutive days is demonstrated.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.496-498
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• 2008

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1010-1013
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• 2006

To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.154-154
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• 2010

We have developed transparent OLED with green phosphorescent doped layer using transparent metal cathode deposited by thermal evaporation technique. Phosphorescent guest molecule, $Ir(ppy)_3$, was doped in host mCP for the green phosphorescent emission. Ca/Ag double layers were used as a cathode material of transparent OLED. The turn-on voltage of OLED was 5.2 V. The highest efficiency of the device reachs to 31 cd/A at 2 mA/$cm^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.694-697
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• 2007

We demonstrate the use of screen printing in the fabrication of highly efficient phosphorescent polymer organic-light-emitting devices (OLEDs) based on a green-emitting $Ir(ppy)_3$ and a host polymer PVK. We incorporate PBD in the polymer host as an electron-transporting dopant and ${\alpha}-NPD$ as a hole transporting dopant. The best screen printed single-layer device exhibits very high peak luminous efficiency of 63 cd/A at a relatively high operating voltage of 17.1 V at the luminance of $650\;cd/m^2$. We observed the highest luminance of $21,000\;Cd/m^2$ at 35V. Due to the high operating voltage, despite of the high peak luminous efficiency the peak power efficiency was found to be 12.2 lm/W at the luminance of $470\;cd/m^2$ (15.9 V).

• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.5-9
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• 2008

New devices with structure of ITO/2TNATA/NPB/TCTA/CBP:7%Ir(ppy)$_3$/BCP/ETL/LiF/Al were proposed to develop high luminous green phosphorescent organic light emitting diodes and their electroluminescent properties were evaluated. The experimental devices were divided into two kinds according to the material ($Alq_3$ or SFC137) used as an electron transport layer (ETL). Luminous intensities of the devices using $Alq_3$ and SFC137 as electron transport layers were 27,500 cd/$m^2$ and 51,500 cd/$m^2$ at an applied voltage of 9V, respectively. The current efficiencies of both devices were similar as 12.6 cd/A under a luminance of 10,000 cd/$m^2$, while showed slower decay in the device with SFC137 as an ETL according to the further increase of luminance. Current density and luminance of the device with SFC137 as an electron transport layer were higher at the same voltage than those of the device with $Alq_3$ as an ETL.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.432-432
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• 2010

Organic light emitting diodes (OLED) thin films were fabricated by Electrostatic spray deposition (ESD). In this study, we reported the thickness, morphology, current efficiency, luminescence of OLED fabricated by ESD. These results were compared with the spin coating method, and showed that also ESD is a good fabrication method for OLED because of its characteristics similar with the results using spin coating. The active layer consists of organic blends with Poly(N-vinylcarbazole) (PVK), 2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N'-Bis(3-methylphenyl) -N,N'-bis(phenyl)-benzidine (TPD), Tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), and the structure of OLED consists of aluminum (Al), lithium fluoride (LiF), organic blends, PEDOT:PSS and Indium-tin-oxide (ITO), which was used as the top cathode, cathode interfacial layer, emitting layer and bottom anode, respectively. The results suggest that Electrostatic spray deposition is a promising method for the next generation of OLED fabrication since it has a probability fabricating large-area thin films.