Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Treatments of Electron Transport Layer in the Fabrication of High Luminous Green Phosphoresent OLED

고휘도 녹색 인광 OLED 제작에서 전자수송층 처리

  • Jang, Ji-Geun (Department of Electronics Engineering, Dankook University) ;
  • Kim, Won-Ki (Department of Electronics Engineering, Dankook University) ;
  • Shin, Sang-Baie (Department of Electronics Engineering, Dankook University) ;
  • Shin, Hyun-Kwan (Department of Electronics Engineering, Dankook University)
  • Published : 2008.09.30
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Abstract

New devices with structure of ITO/2TNATA/NPB/TCTA/CBP:7%Ir(ppy)$_3$/BCP/ETL/LiF/Al were proposed to develop high luminous green phosphorescent organic light emitting diodes and their electroluminescent properties were evaluated. The experimental devices were divided into two kinds according to the material ($Alq_3$ or SFC137) used as an electron transport layer (ETL). Luminous intensities of the devices using $Alq_3$ and SFC137 as electron transport layers were 27,500 cd/$m^2$ and 51,500 cd/$m^2$ at an applied voltage of 9V, respectively. The current efficiencies of both devices were similar as 12.6 cd/A under a luminance of 10,000 cd/$m^2$, while showed slower decay in the device with SFC137 as an ETL according to the further increase of luminance. Current density and luminance of the device with SFC137 as an electron transport layer were higher at the same voltage than those of the device with $Alq_3$ as an ETL.

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