• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.69-76
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• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.88-91
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• 2005

본 논문에서는 비정질 As-Ge-Se-S 박막의 에칭 레이트를 측정하였으며 As-Ge-Se-S 박막에 회절격자를 형성 시킨 후 선택적 에칭을 통한 엠보싱 홀로그램을 제작하였다. NaOH 수용액으로 0.26N, 0.33N, 0.40N 농도로 변화시키며 수행하였으며 에칭 시간에 따른 에칭되는 두께의 변화를 측정하였다. 에칭 레이트는 NaOH 용액의 농도가 0.26N, 0.33N, 0.40N 일 때 각각 $2.5{\AA}/s$, $3.3{\AA}/s$, $3.9{\AA}/s$ 였다. 또한 2차원 엠보싱 회절격자를 형성 시킨후 0.26N NaOH용액으로 60초간 선택적 에칭을 수행하여 AFM(Atomic Force Microscopy) 으로 측정한 결과 선명한 엠보싱 형태의 회절격자를 확인 할 수 있었다.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.354-355
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

• Bulletin of the Korea Photovoltaic Society
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• v.9 no.2
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• pp.18-28
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• 2023

지구상에 풍부하며 저독성 소재인 안티모니 셀레나이드(Sb₂Se₃)는 재료가 갖는 우수한 광전자적 특성과 장기 내구성으로 차세대 태양전지 소자로 크게 주목 받고 있다. 또한, 비교적 짧은 연구기간 동안 빠른 성장 속도를 보여줬으며, 2014년 2.26%에서 8년의 연구기간 동안 약 5배인 2022년 10.57%를 달성하였다. 하지만, 여전히 기존의 칼코지나이드계 박막 태양전지인 CdTe(22.1%) 및 Cu(In,Ga)Se₂(23.35%)가 달성한 효율에 비해 낮은 변환 효율을 보이고 있으며, 이는 계면에서 발생하는 캐리어 재결합으로 인한 개방전압 손실 문제가 주 원인으로 대두되고 있다. 따라서, Sb₂Se₃ 광 흡수층에 인접한 전자 및 정공 수송층 사이에 적절한 밴드 정렬을 구축하여 캐리어 재결합 손실을 줄이는 것이 고효율 Sb₂Se₃ 태양전지를 구현하기 위한 핵심 전략 중 하나이다. 본 원고에서는 Sb₂Se₃ 광 흡수층의 기본적인 특성과 Sb₂Se₃ 태양전지의 최근 연구 성과에 대해 간략하게 설명하고자 하며, 특히 전자 및 정공 수송층 적용을 통한 에너지 밴드 정렬 최적화에 관련된 내용을 중점적으로 소개하고자 한다. 또한, Sb₂Se₃ 박막 태양전지 성능의 병목 현상을 극복하기 위한 잠재적인 연구 방향에 대해서도 논하고자 한다.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.35-41
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• 2004

This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.140-148
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• 1993

In this study, the electrical and optical properties of amorphous, crystallization and thin film of As-Ge-Se Chalcogenide System was investigated. Typical composition of this material has $As_{20~50}Se_{40~70} and Ge_{10~40}$ at%. Materials having Se was fixed to 40 at% and As was above 30 at% much more increased the electrical conductivity. After crystallization at the temperature of $476^{\circ}C$ for 3 hour was showed the best electrical conductivity of 1.74E-13$(\Omega cm)^{-l}$. And the main crystalline phase of this sample can be investigated using the mixed crystalline, i.e, $GeSe_2 and As_2Se_3$ phases. The thin film shows the optical absorption coefficient in the range $2{times}10^3 to 7{times}10^4$ and the optical energy gap of 1.85eV.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.313-316
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• 2007

본 연구에서는 Cu와 In 성분을 포함하는 메탄올 용액을 닥터 블레이딩 방법으로 코팅한 후 이를 Se Evaporator 열처리하여 CIS 광흡수층을 제조하였다. $Cu(NO_{3})_{2}$, $INCl_{3}$ 를 출발 물질로 선정하고, 이를 메탄올 용매에 녹여 전구체 용액을 만든 후, 여기에 유기물 바인더 물질을 첨가하여 닥터 블레이드 코팅에 적합한 점도를 맞춘 후, 이를 Mo/glass 기판에 코팅하였다. 코팅된 Cu, In 함유 유기물 혼합체를 공기중에서 1차 열처리 한 후 Evaporator 를 이용해 Selenization 하여 태양전지용 CIS 광흡수층을 만들었다. 본 연구에서는 전구체 합성, 유기물 첨가, 공기중 열처리 및 Se 열처리 각 단계에서 광흡수층 막의 형상, 결정구조, 화학조성의 변화과정을 분석하여 CIS 박막의 형성 과정을 고찰하였다. 특히 Se 증발 온도가 CIS막의 특성과 조성에 미치는 영향을 분석하여, 최적의 셀렌화 조건을 도출하고자 하였다.

• Solar Energy
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• v.10 no.3
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• pp.53-59
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• 1990

[ $CdSe_xTe_{1-x}$ ] ($0{\le}x{\le}1$) thin films were deposited cathodically on Ti substrates in aqueous sulfric acid solution containing 1M $CdSO_4$ and 1mM$(TeO_2+SeO_2)$. The limiting current was observed in deposition potential ranging from -0.20 to -0.65 vs.Ag/AgCl ; although its value has changed a little depending on the mole ratio x, the limiting current was almost constant in deposition potential of -0.45V in spite of the change of mole ratio x. The crystal structure of the $CdSe_xTe_{1-x}$ thin films was cubic zinc-blonde in the range of mole ratio $x=0{\sim}0.8$, and hexagonal wurtzite in the mole ratio x=1 When the mole ratio changed from x=0 to x=0.8, diffraction peaks was shifted to the larger diffraction angle.