• 한국세라믹학회지
• /
• 제49권6호
• /
• pp.663-668
• /
• 2012

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{\sim}1.8}Zn_{0.2}Sn_{0.2{\sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{\circ}C$, the electrical resistivity of the film decreased to $6.34{\times}10^{-4}{\Omega}{\cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권1호
• /
• pp.21-26
• /
• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.