• Title/Summary/Keyword: $In_{0.8}Ga_{0.2}As$

Search Result 424, Processing Time 0.039 seconds

Characteristics of Samhaeju Made by Various Processing Methods Originating from Ancient Documents (고문헌 유래 삼해주의 제조방법에 따른 품질특성)

  • Park, Ji-Hye;Yeo, Soo-Hwan;Jeong, Seok-Tae;Won, Myong-Ha;Choi, Ji-Ho
    • Journal of the East Asian Society of Dietary Life
    • /
    • v.21 no.6
    • /
    • pp.853-862
    • /
    • 2011
  • We reproduced and investigated the quality characteristics of Samhaeju (one type of Korean traditional rice wine), which has been described in ancient documents. During fermentation, the room temperature was $9.1{\sim}25.0{\circ}C$, and each treatment's material temperature was $11.7{\sim}23^{\circ}C$. As the fermentation proceeded, the pH rapidly decreased (initial pH was 6.6~6.9) and rose gradually from the 18th day. Titratable acidity and amino acidity slowly increased in general. Regarding soluble solid contents, there were various change patterns depending on the production method, and they were affected by initial room temperature. In the treatments using 1 (Sang-ga-yo-rok), 3 (Eum-sik-di-mi-bang), 7 (Jo-sun-mu-ssang-sin-sik-yo-ri-je-beop), 8 (Sang-ga-yo-rok $15^{\circ}C$), reducing sugar contents decreased rapidly after 1st mashing day and then increased slightly after 2nd mashing. The alcohol content increased as the fermentation proceeded, and most of the treatments produced 1/2 the amount of total alcohol content before the 2nd mashing day, followed by a slight increase until the end of fermentation (about 100 days from the 2nd mashing day). In the sensory evaluation, Samhaeju using methods 2, 4, 5, and 6 got high scores and had much reducing sugar contents than other treatments. Among the seven manufacturing processes, method 2 was relatively simple and got the highest score in the sensory evaluation. Therefore, method 2 would be suitable for industrialization and popularization of Korean traditional alcoholic beverage.

Mapping Species-Specific Optimal Plantation Sites Based on Environmental Variables in Namwon City, Korea (환경요인을 이용한 남원시의 적지적수도 제작)

  • Moon, Ga Hyun;Kim, Yong Suk;Lim, Joo Hoon;Shin, Man Yong
    • Korean Journal of Agricultural and Forest Meteorology
    • /
    • v.17 no.2
    • /
    • pp.126-135
    • /
    • 2015
  • This study was conducted to develop a large scale map of species-specific plantation sites based on selected environmental variables such as topography, soil, and climatic factors in Namwon city. Site index equations by tree species were first regressed to 27 environmental variables that could influence the productivity of forest sites using digital forest site maps, digital climate maps, and the 5th National Forest Inventory data. Site index equations by tree species were all evaluated to estimate site productivity using 4-5 environmental variables, and the models' reliability was confirmed based on evaluation statistics. The determination coefficients of site index equations by species ranged from 0.42 to 0.76. With the site index equations, the site conditions appropriate for productive sites by species were considered to assess spatial distribution of productive areas for each species. The final map for optimal plantation in Namwon city was produced based on both site index equations and site conditions appropriate for productive sites by each species using GIS technique. Field survey was conducted to evaluate the suitability of selected species on the map of species-specific plantation sites. Results showed that the plantation map provides relatively reasonable spatial distribution of productive areas for selected species. It was revealed, however, that the sites evaluated as 'not suitable' for any tree species should be revised and complemented with additional information, especially with the site conditions appropriate for productive sites by species of interest. The outcomes of this study are expected to provide information for making customized species-specific plantation maps.

An Experience of Therapeutic Plasma Exchange in 9 Pediatric Patients (소아에서 시행한 치료적 혈장교환술 9례의 임상적 고찰)

  • Lee Jee-Hyun;Jeon Ga-Won;Park Sung-Eun;Jin Dong-Kyu;Paik Kyung-Hoon
    • Childhood Kidney Diseases
    • /
    • v.9 no.1
    • /
    • pp.38-45
    • /
    • 2005
  • Purpose : The purpose of this study was to analyze the therapeutic effect of plasmapheresis in various pediatric diseases. Methods : Therapeutic plasmapheresis was performed by COBE Spectra centrifugation. Nine cases were included in this study. The number an[;. method of plasmapheresis, together with the progress and prognosis of each case were retrospectively reviewed. Results : The patients' ages ranged from 26 mont]Is to 16 years of age, and the mean age was 9.9 years. There were S males and 4 females. The underlying diseases requiring plasmapheresis included 2 cases of hemolytic uremic svndrome(HUS), 1 case of lupus nephritis, 2 cases of rapidly Progressive glomerulonephritis(RPGN), 1 case of focal segmental glomorulosclerosis(FSGS), 1 case of systemic vasculitis after pulmonary hemorrhage, 1 case of acute renal failure associated with pulmonary hemoIThage, and 1 case of acute rejection after renal transplantation. The average number of plasmapheresis performed was 6.2 times with a range of 3 to 13 times. The patients with HUS, lupus nephritis, ANCA positive systemic vasculitis induced by pulmonary hemorrhage and ARF-associated pulmonary hemorrhage showed a good response to therapeutic plasmapheresis, but the patients with RPGN, refractory FSGS, and acute rejection after renal transplantation were not responsive to treatment. The most common side effect was hypocalcemia which was rarely symptomatic. Vital signs were not compromised. Conclusion : Although it is presumptuous to generalize the therapeutic effects of plasma pheresis in different diseases due to the small number of study subjects, this study shows that plasmapheresis may be an effective therapeutic modality in various pediatrics diseases and should be considered as a therapeutic option.

  • PDF

Studies on Nutrio-physiological Response of Rice Plant to Root Environment (근부환경(根部環境)에 따른 수도(水稻)의 영양생리적(營養生理的) 반응(反應)에 관(關)한 연구(硏究))

  • Park, J.K.;Kim, Y.S.;Oh, W.K.;Park, H.;Yazawa, F.
    • Korean Journal of Soil Science and Fertilizer
    • /
    • v.2 no.1
    • /
    • pp.53-68
    • /
    • 1969
  • The nutriophysiological response of rice plant to root environment was investigated with eye observation of root development and rhizosphere in situation. The results may be summarized as follows: 1) The quick decomposition of organic matter, added in low yield soil, caused that the origainal organic matter content was reached very quickly, in spite of it low value. In high yield soil the reverse was seen. 2) In low yield soil root development, root activity and T/R value were very low, whereas addition of organic matter lowered them still wore. This might be contributed to gas bubbles around the root by the decomposition of organic matter. 3) Varietal difference in the response to root environment was clear. Suwon 82 was more susceptible to growth-inhibitine conditions on low-yield soil than Norin 25. 4) Potassium uptake was mostly hindered by organic matter, while some factors in soil hindered mostly posphorus uptake. When the organic matter was added to such soil, the effect of them resulted in multiple interaction. 5) The root activity showed a correlation coeffieient of 0.839, 0.834 and 0.948 at 1% level with the number of root, yield of aerial part and root yield, respectively. At 5% level the root-activity showed correlation-coefficient of 0.751, 0.670 and 0.769 with the uptake of the aerial part of respectively. N, P and K and a correlation-coefficient of 0.729, 0.742 and 0.815 with the uptake of the root of respectively N.P. and K. So especially for K-uptake a high correlation with the root-activity was found. 6) The nitrogen content of the roots in low-yield soil was higher than in high-yield soil, while the content in the upper part showed the reverse. It may suggest ammonium toxicity in the root. In low-yield soil Potassium and Phosphorus content was low in both the root and aerial part, and in the latter particularly in the culm and leaf sheath. 7) The content of reducing sugar, non-recuding sugar, starh and eugar, total carbohydrates in the aerial part of plants in low yield soil was higher than in high yield soil. The content of them, especially of reducing sugar in the roots was lower. It may be caused by abnormal metabolic consumption of sugar in the root. 8) Sulfur content was very high in the aerial part, especially in leaf blade of plants on low yield soil and $P_2O_5/S$ value of the leaf blade was one fifth of that in high yield soil. It suggests a possible toxic effect of sulfate ion on photophosphorization. 9) The high value of $Fe/P_2O_5$ of the aerial part of plants in low yield soil suggests the possible formation of solid $Fe/PO_4$ as a mechanical hindrance for the translocation of nutrients. 10) Translocation of nutrients in the plant was very poor and most nutrients were accumulated in the root in low yield soil. That might contributed to the lack of energy sources and mechanical hindrance. 11) The amount of roots in high yield soil, was greater than that in low yield soil. The in high-yield soil was deep, distribution of the roots whereas in the low-yield soil the root-distribution was mainly in the top-layer. Without application of Nitrogen fertilizer the roots were mainly distributed in the upper 7cm. of topsoil. With 120 kg N/ha. root were more concentrated in the layer between 7cm. and 14cm. depth. The amount of roots increased with the amount of fertilizer applied.

  • PDF

Digital Still Camera Profiling for the Optimization Of Printing Process (인쇄 공정의 최적화를 위한 디지털카메라의 Profiling)

  • Cha, Jae-Young;Cho, Ga-Ram;Koo, Chul-Whoi
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.26 no.2
    • /
    • pp.65-77
    • /
    • 2008
  • The color reproduction of digital still camera does not, in general, match those of the final prints. Because color gamut of these devices is different, it is therefore necessary to take account of a way to match. The way uses the optimized profile to print an image. This paper proposed a way to create the input profile of digital still camera for standardization printing process. The results of proposed way showed that for input profiles equivalent, good results relatively. In this paper, an experiment was done where the illumination sources used as the standard illumination 5200K and illuminated at a $45^{\circ}$ angle in the best illumination efficiently. The white balance was in mode 'custom': aperture F11, exposure time 1/60s, ISO50, focal length 80mm. The images were exported and saved as 16bit RGB tiff(AdobeRGB, sRGB, ProphotoRGB) images. To do the test, the RGB values of the RGB tiff images are processed through the ICC input profile to arrive at processed $CIEL^*a^*b^*$ values. A profiling tool such as ProfileMaker 5.0 and Monacoprofile 4.8 are used to do this. The processed CIEL*a*b* values are compared to the reference CIEL*a*b* values and these two values are used to calculate a ${\Delta}E$.

  • PDF

InGaZnO active layer 두께에 따른 thin-film transistor 전기적인 영향

  • U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.11a
    • /
    • pp.5-5
    • /
    • 2009
  • Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

  • PDF

Photocurrent Study on the Splitting of the Valence Band and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Park, Chang-Sun;Hong, Kwang-Joon;Park, Jin-Sun;Lee, Bong-Ju;Jeong, Jun-Woo;Bang, Jin-Ju;Kim, Hyun
    • Journal of Sensor Science and Technology
    • /
    • v.13 no.2
    • /
    • pp.157-167
    • /
    • 2004
  • A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

Development of V-band Wireless Transceiver using MMIC Modules (MMIC 모듈을 이용한 V-band 무선 송수신 시스템의 구축)

  • Lee, Sang-Jin;An, Dan;Lee, Mun-Kyo;Go, Du-Hyun;Jin, Jin-Man;Kim, Sung-Chan;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
    • /
    • 2005.11a
    • /
    • pp.575-578
    • /
    • 2005
  • We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band Microwave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_1$ $_{dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a P $_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a P $_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

  • PDF

V-band Self-heterodyne Wireless Transceiver using MMIC Modules

  • An, Dan;Lee, Mun-Kyo;Lee, Sang-Jin;Ko, Du-Hyun;Jin, Jin-Man;Kim, Sung-Chan;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.5 no.3
    • /
    • pp.210-219
    • /
    • 2005
  • We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

Cu2ZnSn(S,Se)4 Thin Film Solar Cells Fabricated by Sulfurization of Stacked Precursors Prepared Using Sputtering Process

  • Gang, Myeng Gil;Shin, Seung Wook;Lee, Jeong Yong;Kim, Jin Hyeok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.97-97
    • /
    • 2013
  • Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from $520^{\circ}C$ to $580^{\circ}C$. Structural, optical, microstructural, and electrical properties of absorber layers were characterized using XRD, SEM, TEM, UV-Vis spectroscopy, Hall-measurement, TRPL, etc. The effects of processing parameters, such as composition ratio, sulfurization pressure, and sulfurization temperature on the properties of CZTSS absorber layers will be discussed in detail. CZTSS thin film solar cell fabricated using metallic precursors shows maximum cell efficiency of 6.9% with Jsc of 25.2 mA/cm2, Voc of 469 mV, and fill factor of 59.1% and CZTS thin film solar cell using sulfide precursors shows that of 4.5% with Jsc of 19.8 mA/cm2, Voc of 492 mV, and fill factor of 46.2%. In addition, other research activities in our lab related to the formation of CZTS absorber layers using solution based processes such as electro-deposition, chemical solution deposition, nano-particle formation will be introduced briefly.

  • PDF