• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.1-257.1
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• 2015

Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

• Environmental Engineering Research
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• v.12 no.3
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• pp.101-108
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• 2007

Fixation of lead contaminants in the solidification/stabilization using Portland cement has been investigated by X-ray diffraction, scanning electron microscopy and compressive strength. The presence of lead was observed to produce lead carbonate sulfate hydroxide ($Pb_4SO_4(CO_3)_2(OH)_2$), lead carbonate hydroxide hydrate ($3PbCO_3{\cdot}2Pb(OH)_2{\cdot}H_2O$) and two other unidentified lead salts in cavity areas and was observed to significantly retard the hydration of cement. By 28 days, howevere, the XRD peaks of most of the lead precipitates have essentially disappeared with only residual traces of lead carbonate sulfate hydroxide and lead carbonate hydroxide hydrate evident. After 28 days of curing, hydration appears well advanced with a strong portlandite peak present though C-S-H gel peaks are not particularly evident. Lead species produced with the dissolution of lead precipitates are fixed into the cement matrix to be calcium lead silicate hydrate (C-Pb-S-H) during cement-based solidification.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.147-153
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• 1998

Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.178-184
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• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• Journal of the Korean Chemical Society
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• v.37 no.11
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• pp.951-960
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• 1993

$Hg^{2+}$-induced aquation trans-[Co(3,2,3-tet)$X_2]^+$(3,2,3-tet = 4,7-diazadecane-1,10-diamine, $X_2\;=\;Cl_2,\;(NO_2)Cl,\;Br_2,\;(NO_2)Br,\;(NO_3)_2)$ complexes was investigated in aqueous solution. The products and the reaction mechanism were confirmed by chromatography, UV/Vis. spectrum, and circular dichroism (CD) spectrum. From the results, $Hg^{2+}$-induced aquation of 3,2,3-tet system has been produced cis-${\beta}$ complex via trans complex. The kinetic studies on $Hg^{2+}$-induced aquation of trans-[Co(3,2,3-tet)$Cl_2]^+$ complex and trans-[Co(3,2,3-tet)$(NO_2)Cl]^+$ complex were also carried out to study the reaction mechanism. The results show that trans-[Co(3,2,3-tet)$Cl_2]^+$ complex undergoes the D(dissociative)-mechanism and trans-[Co(3,2,3-tet)$(NO_2)Cl]^+$ complex $I_d$(interchange dissociavite)-mechanism. In order to confirm steric course for the reaction mechanism, $Hg^{2+}$-induced aquation on trans-[Co(R,R-3,2,3-tet)$Cl_2]^+$ complex to which chiral R,R-3,2,3-tet was coordinated instead of the racemic(R,R:S,S) 3,2,3-tet was used has been examined by CD spectrum. From the results, the final complex was confirmed to be ${\Delta}-cis-{\beta}$-[Co(R,R-3,2,3-tet)$(OH_2)_2]^{3+}$ complex indicating the chirality was retained through whole process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1140-1143
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Journal of the Korean Society of Propulsion Engineers
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• v.23 no.6
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• pp.72-86
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• 2019

SpaceX is currently leading the global launch market with the successful launch and recovery of Falcon 9 v1.2 Block 5. SpaceX developed Merlin engine, a kerosene gas generator engine, and continuously upgraded the engine from Falcon 1 to Falcon Heavy to increase payload weight. SpaceX suffered a lot of failures early on, but with the help of NASA, it was possible to overcome many crises and develop vehicles. In addition, it successfully developed reusable vehicles, which drastically reduced operating costs. Subsequent launch vehicles in Korea also need to be developed with reference to SpaceX's development strategy.

• Journal of Korea Society of Industrial Information Systems
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• v.7 no.1
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• pp.75-80
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• 2002

We investigate sorry: asymptotic stabilities of the zero solution for the perturbed linear differential system dx/dt=A(t)x+e(t, x)+f(t,x), by using Perron's method and integral inequalities, etc. and we also find some sufficient conditions that ensure some asymptotic stabilities of the zero solution of the system And hence we obtain several results of it.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.162-167
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• 1998

$SiO_xF_y$ optical thin films of lower refractive indices than glass substrates were fabricated by the CF$_4$ ion beam assisted deposition method and the optical, structural and chemical properties of them were investigated. Refractive index of $SiO_xF_y$ films was varied from 1.455 to 1.394 by decreasing the anode voltage or from 1.462 to 1.430 by increasing the current density of end-Hall ion source. FT-IR and XPS analyses show that as the F concentration increases, the Si-O bond at $1080m^{-1}$ shifts to higher wavenumber, the OH bonds are reduced drastically, and the fluorine atoms at the air-film interface are desorbed out by reacting with $H_2O$ in the atmosphere. $SiO_xF_y$ thin films are amorphous by the XRD analysis and have the compressive stress below 0.3 GPa. As an application of $SiO_xF_y$ thin films a two-layer antireflection coating was fabricated using a $SiO_xF_y$ film as a low refractive index layer and a Si film as an absorbing one.

• Polymer(Korea)
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• v.29 no.4
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• pp.363-367
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• 2005

The effects of organic solvent on the charge transport behavior of poly (3,4-ethylenedioxythioph one)/p-toluene-sulfonate(PEDOT-OTs) are investigated. The use of different organic solvents during the oxidative chemical polymerization of 3,4-ethylenedioxythiophene (EDOT) with Iron(III) -tosylate can greatly vary the DC conductivity of PEDOT-OTs along with molecular structure and doping concentration. For example, PEDOT-OTs prepared from methanol shows the conductivity of 19.5 S/cm, which is an increase by a factor of $10^8$ compared to PEDOT-OTa prepared from acetone. From the X-ray diffraction (XRD) experiments, it was found that PEDOT-OTs with ketone is amorphous state, while PEDOT-OTs with alcoholic solvent shows the better defined crystalline structure in which the charge transport along and between the PEDOT chains are promoted. Chemical analysis employing X-ray photoelectron spectroscopy (XPS) revealed that the doping concentration of PEDOT-OTs with alcoholic solvent is much higher than that of PEDOT-OTs with ketones. It is proposed that the interactions between the organic solvent and doping anion can cause the variation in doping concentration and, therefore, result in the PEDOT-OTs of different conductivities and chain structures.