• Title/Summary/Keyword: $HgGa_{2}S_{4}:Co^{2+}$

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Impurity Optical Absorption of Co2+ Ion in HgGa2S4:Co2+ Single Crystals (HgGa2S4:Co2+ 단결정에서 Co2+ 이온에 의한 광흡수 특성에 관한 연구)

  • 이상열;강종욱
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.579-583
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    • 2003
  • HgGa$_2$S$_4$: Co$^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2+}$ sited in the S$_4$ symmetry point.

Impurity optical absorption of $HgGa_2S_4:CO^{2+}$ single crystals ($HgGa_2S_4:CO^{2+}$ 단결정의 불순물 광흡수)

  • Kim, H.G.;Kim, N.O.;Kim, B.C.;Choi, Y.I.;Kim, D.T.;Hyun, S.C.;Bang, T.H.;Lee, K.S.;Gu, H.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05c
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    • pp.3-7
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    • 2004
  • $HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

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Co 불순물을 첨가한 HgGa2S2 단결정의 광흡수 특성

  • Kim, N.O.;Kim, H.G.;Kim, B.C.;Min, W.K.;Jeon, H.S.;Shin, S.D.;Bang, T.W.
    • Proceedings of the KIEE Conference
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    • 2004.07e
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    • pp.55-57
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    • 2004
  • $HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

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