• 제목/요약/키워드: $HgGa_{2}S_{4}:Co^{2+}$

검색결과 3건 처리시간 0.019초

HgGa2S4:Co2+ 단결정에서 Co2+ 이온에 의한 광흡수 특성에 관한 연구 (Impurity Optical Absorption of Co2+ Ion in HgGa2S4:Co2+ Single Crystals)

  • 이상열;강종욱
    • 한국전기전자재료학회논문지
    • /
    • 제16권7호
    • /
    • pp.579-583
    • /
    • 2003
  • HgGa$_2$S$_4$: Co$^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2+}$ sited in the S$_4$ symmetry point.

$HgGa_2S_4:CO^{2+}$ 단결정의 불순물 광흡수 (Impurity optical absorption of $HgGa_2S_4:CO^{2+}$ single crystals)

  • 김형곤;김남오;김병철;최영일;김덕태;현승철;방태환;이경섭;구할본
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집
    • /
    • pp.3-7
    • /
    • 2004
  • $HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

  • PDF

Co 불순물을 첨가한 HgGa2S2 단결정의 광흡수 특성

  • 김남오;김형곤;김병철;민완기;전형석;신석두;방태환
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2004년도 학술대회 논문집 전문대학교육위원
    • /
    • pp.55-57
    • /
    • 2004
  • $HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

  • PDF