• Journal of the Korean Chemical Society
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• v.55 no.3
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• pp.444-453
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• 2011

VO(II), ZrO(II), Hf(IV), $UO_2$(II), Sn(II), V(V)$O_3$, Ru(III), Cd(II), Ho(III) and Yb(III) complexes of N'-(2-hydroxybenzyl)-2-(phenylamino)acetohydrazide ($H_2L^1$, 1) and N'-((3-hydroxy-naphthalen-2-yl)methylene)-2-(phenylamino)-acetohydrazide ($H_2L^2$, 13) have been synthesized and characterized by elemental analyses, $^1H$ NMR, IR, UV-Vis, conductance, thermal analyses (DTA and TG). The spectral data showed that the ligands behave as neutral bidentate, monobasic bidentate, monobasic tridentate or bibasic tridentate ligand bonded to the metal ions through the azomethine nitrogen atoms, phenolic hydroxyl group in protonated or deprotonated form and enolic or ketonic carbonyl group. The ligands and their metal complexes exhibit higher antifungal and antibacterial inhibitory effects than parent ligands and the solution of metal ions. Most of metal complexes exhibit higher antifungal activity than standard antifungal drug (amphotricene B). It is also clear that the ligands and their metal complexes have higher antifungal activity than antibacterial activity.

• Journal of the Korean Ceramic Society
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• v.43 no.4 s.287
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• pp.235-241
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• 2006

Mullite short fibers have been fabricated by adapting the Kneading-Drying-Calcination (KDC) process and characterized. The effect of the addition of foaming agent and calcination temperature on the formation of mullite fibers from coal fly ash, was examined. In the present work, ammonium alum $NH_4Al(SO_4)_2\;12H_2O$ synthesized trom coal fly ash and sodium phosphate $Na_2HPO_4\;2H_2O$ were used as foaming agents. After calcination at $1300^{\circ}C$ for 10 h and then etching with 20% HF solution at $50^{\circ}C$ for 5 h using a microwave heating source, the alumina-deficient $(AI_2O_3/SiO_2$ = 1.13, molar ratio) orthorhombic mullite fibers with a width of ${\sim}0.8mm$ (aspect ratio >30), were prepared from the coal fly ash with $AI_2O_3/SiO_2$ = 0.32, molar ratio by the addition of $NH_4AI(SO_4)_2\;12H_2O$, and with further addition of 2 wt% sodium phosphate. The excessive addition of sodium phosphate rather decreased the formation of mullite fibers, possibly due to the large amount of liquid phase prior to mullitization reaction.

• Proceedings of the Mineralogical Society of Korea Conference
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• 2001.06a
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• pp.132-132
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• 2001

옥천변성대의 충주-황강리 지역내 앰피볼라이트의 기원암은 염기성 화성암으로 쏠레이아이트 계열의 변이질암에 속한다. Fe $O^{*}$/MgO값의 변화에 대하여 분별작용에 의해 영향을 받는 주성분 원소와 미량원소들의 변화를 보게되면 Ti $O_2$, Fe $O^{*}$와 불호정성 원소(incompatible element)인 Zr, Nb, Hf, Ta, Th 등은 분별작용동안 증가하는 반면 호정성 원소(compatible element)인 MgO, $Al_2$ $O_3$, Ni, Cr 등은 감소하는 경향을 보여주고 있다. Fe $O^{*}$/MgO, Ti $O_2$ 그리고 Fe $O^{*}$는 심해성 쏠레이아이트 영역으로부터 분화된 경향을 나타내 주고 있다. Ni, Cr은 Fe $O^{*}$/MgO값의 증가에 따라 급속히 감소하며 안정한 대륙과 해저화산의 영역에 도시되고 있으며 칼크-알칼리(CA)와는 관계가 없고 쏠레이아이트의 영역에서 변화 패턴을 보여주어 앰피볼라이트가 활동적인 대륙연변부의 지구조 환경보다는 안정한 대륙이나 해저화산과 관계가 더 있음을 시사한다. 경휘토류 원소(LREE)는 중휘토류 원소(HREE)에 비해 더욱 부화된 특성을 띠고 원자번호가 증가하면서 표준화된 휘토류 원소패턴의 경사가 점차 감소하는 경향을 보여주고 있다. 대부분의 시료들은 큰 Eu이상치를 갖고 있지 않아 마그마 정출 과정동안 사장석의 분별작용이 거의 수반되지 않았음을 지시하고 전체적인 휘토류 원소의 패턴은 거의 평행하게 나타나므로 기원 마그마가 유사함을 의미하고 있다. 비유동성 원소를 이용한 여러 판별도표들을 통해서 본암은 대륙성 현무암질암으로서 판내부 환경에서 유래되었으며 대륙내부 열곡의 알칼리 현무암과 대륙성 현무암 영역에 속하는 것으로 보아서 대륙지각내 열곡작용과 같은 장력운동에 수반되어 생성된 것임을 시사해 주고 있다. 앰피볼라이트의 지각혼성화를 평가하기 위해 이에 필요한 몇 개의 지화학적 매개변수를 계산한 결과 La/Ta, La/Nb, Nb/Th들의 값이 오염 안된 마그마의 값을 지시해 주어 본암이 지각혼성화 작용을 받지 않은 것으로 나타났다. 대부분의 시료들은 P-타입 MORB의 영역에 속하며 소수의 시료가 T-타입 MORB의 영역에 도시되고 있어 본 앰피볼라이트의 생성에는 양적으로 다른 두 가지의 유사한 마그마가 수반된 것으로 추정된다. 것으로 추정된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.420-420
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• 2014

최근, 과학 기술이 발달함에 따라 현장에서의 실시간 검사 및 자가 지단 등 질병 치유에 대한 사람들의 관심이 증가하고 있으며, 이에 따라 의료, 환경, 산업과 같은 많은 분야에서 바이오 센서에 대한 연구가 활발하게 이루어지고 있다. 그 중, EGFET는 전해질 속의 각종 이온 농도를 전기적으로 측정하는 바이오 센서로, 외부 환경으로부터 안전하고, 제작이 쉬우며, 재활용이 가능하여 비용을 절감 할 수 있다는 장점을 가지고 있다 [1]. EGFET는 감지부와 FET부로 분리된 구조를 가지고 있으며, 감지부의 감지막으로는 Al2O3, HfO2, $TiO_2$, SnO2 와 같은 다양한 물질들이 사용되고 있다. 그 중, SnO2는 우수한 감도와 안정성을 가지고 있는 물질로 추가적인 열처리 공정 없이도 우수한 감지 특성을 나타내기 때문에 본 연구에서 감지막으로 사용하였다. 한편, EGFETs 의 FET부로는 기존의 비정질 실리콘 TFTs 에 비해 10배 이상의 높은 이동도와 온/오프 전류비를 갖는 InGaZnO 를 채널층으로 사용한 TFTs 를 사용하였다. a-IGZO 는 넓은 밴드 갭으로 인해 가시광 영역에서 투명하며, 향후 투명 바이오센서 제작 시, 물질들 사이의 반응을 전기적 신호뿐만 아니라 광학적인 분석 방법으로도 검출이 가능하기에 고 신뢰성을 갖는 센서의 제작이 가능할 것으로 기대된다. 한편, a-IGZO TFTs 의 경우 우수한 전기적 특성을 나타냄에도 불구하고 소자 동작 시 문턱 전압이 불안정하다는 단점이 있으며 [2], 이러한 문제의 개선과 향후 투명 기판 위에서의 소자 제작을 위해서는 저온 열처리 공정이 필수적이다. 따라서, 본 연구에서는 저온 열처리 공정인 u-wave 열처리를 통하여 a-IGZO TFTs 의 전기적 특성 및 안정성을 향상시켰으며, 9.51 [$cm2/V{\cdot}s$]의 이동도와 135 [mV/dec] 의 SS값, 0.99 [V]의 문턱 전압, 1.18E+08의 온/오프 전류 비를 갖는 고성능 스위칭 TFTs 를 제작하였다. 최종적으로, 제작된 a-IGZO TFTs 를 SnO2 감지막을 갖는 EGFETs 에 적용함으로써 우수한 감지 특성과 안정성을 갖는 바이오 센서를 제작하였다.

• Nuclear Engineering and Technology
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• v.49 no.8
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• pp.1711-1716
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• 2017

Uranium tetrafluoride ($UF_4$) is the most used nuclear material for producing metallic uranium by reduction with Ca or Mg. Metallic uranium is a raw material for the manufacture of uranium silicide, $U_3Si_2$, which is the most suitable uranium compound for use as nuclear fuel for research reactors. By contrast, ammonium uranyl carbonate is a traditional uranium compound used for manufacturing uranium dioxide $UO_2$ fuel for nuclear power reactors or $U_3O_8-Al$ dispersion fuel for nuclear research reactors. This work describes a procedure for recovering uranium and ammonium fluoride ($NH_4F$) from a liquid residue generated during the production routine of ammonium uranyl carbonate, ending with $UF_4$ as a final product. The residue, consisting of a solution containing high concentrations of ammonium ($NH_4^+$), fluoride ($F^-$), and carbonate ($CO_3^{2-}$), has significant concentrations of uranium as $UO_2^{2+}$. From this residue, the proposed procedure consists of precipitating ammonium peroxide fluorouranate (APOFU) and $NH_4F$, while recovering the major part of uranium. Further, the remaining solution is concentrated by heating, and ammonium bifluoride ($NH_4HF_2$) is precipitated. As a final step, $NH_4HF_2$ is added to $UO_2$, inducing fluoridation and decomposition, resulting in $UF_4$ with adequate properties for metallic uranium manufacture.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean earth science society
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• v.21 no.5
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• pp.595-610
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• 2000

This study has been designed to elucidate the petrography and geochemical characteristics of the volcanic rocks and focused on petrogenesis and tectonic environment of the Bokyeongsa volcanics in the northeast Gyeongsang Basin. The Bokyeongsa volcanics consist of the Naeyeonsan tuff which include rock fragment plagioclase, quartz and hornblende and pumice showing welded structures, and felsite. According to the petrochemical data, the Naeyeonsan tuff and felsite are in the range of 68${\sim}$71wt% and 77wt% SiO$_2$ content respectively. The Naeyeonsan tuff belongs to dacite/rhyodacite, and felsite to rhyolite. These volcanics rocks belong to the calc-alkaline rock series on the TAS diagram and the AFM diagram. The variations of major elements of the volcanic rocks show that contene of TiO$_2$, Al$_2$ O$_3$, FeO$^T$, MnO, MgO, CaO are inversely proportional to those of SiO$_2$, but contents of K$_2$O are positively. They represent differentiation trend of calc-alkaline rocks series. In spider disgram of MORB-normalized trace element partterns, contents of K, Rb, Th and Ta are relatively high, but those of Nb, Zr, Hf, Ti, Y and Yb are nearly similar to MORB. In the chondrite-normalized REE patterns, light REEs are more enriched than heavy REEs. The trace element composition and REE patterns suggest that they are typical island-arc calc-akaline volcanic rocks formed in the tectonomagmatic environment of subduction zone under continental margin.

• Economic and Environmental Geology
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• v.39 no.6 s.181
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• pp.675-687
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• 2006

The purpose of this study is to determine the geochemical characteristics of the stream sediments in the Cheongpung area. So that we can understand the natural background and predict the prospects of geochemical disaster, if any. We collected the stream sediments samples by wet sieving along the primary channels and slow dried the collected samples in the laboratory and ground them to pass a 200 mesh using an alumina mortar and pestle for chemical analysis. Miner-alogical characteristics, major, trace and rare earth elements were determined by XRD, XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on the geological group of stream sediments, the studied area was grouped into granitic gneiss area, metatectic gneiss area, Dado tuff area, Yuchi conglomerate area, and Neungju flow area in the Cheongpung area. Contents of major elements for the stream sediments in the Cheongpung area were $SiO_2\;47.31{\sim}72.81\;wt.%,\;A1_2O_3 \;11.26{\sim}21.88\;wt.%,\;Fe_2O_3\;2.83{\sim}8.39\;wt.%,\;CaO\;0.34{\sim}7.54\;wt.%,\;MgO\; 0.55{\sim}3.59\;wt.%,\;K_2O\;1.71{\sim}4.31\;wt.%,\;Na_2O\;0.56{\sim}2.28\;wt.%,\;TiO_2\;0.46{\sim}1.24\;wt.%,\;MnO\;0.04{\sim}0.27\;wt.%,\;P_2O_5\;0.02{\sim}0.45\;wt.%$. The con-tents of trace and rare earth elements for the stream sediments were $Ba\;700ppm{\sim}8990ppm,\;Be\;1.0{\sim}3.50ppm,\;Cu\;6.20{\sim}60ppm,\;Nb\;12{\sim}28ppm,\;Ni\;4.4{\sim}61ppm,\;Pb\;13{\sim}34ppm,\;Sr\;65{\sim}787ppm,\;V\;4{\sim}98ppm,\;Zr\;32{\sim}164ppm,\;Li\;21{\sim}827ppm,\;Co\;3.68{\sim}65ppm,\;Cr\;16.7{\sim}409ppm,\;Cs\;2.72{\sim}37.1ppm,\;Hf\;4.99{\sim}49.2ppm,\;Rb\;71.9{\sim}649ppm,\;Sb\;0.16{\sim}5.03ppm,\;Sc\;4.97{\sim}52ppm,\;Zn\;26.3{\sim}375ppm,\;Ce\;60.6{\sim}373ppm,\;Eu\;0.82{\sim}6ppm,\;Yb\;0.71{\sim}10ppm$.

• Economic and Environmental Geology
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• v.30 no.5
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• pp.417-431
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• 1997

Characteristics of sedimentary rocks and enrichment of toxic elements in shale and coal from the Chungnam coal field were investigated based upon geochemistry of major, trace and rare earth elements. Shale and coal of the area are interbedded along the Traissic to the Jurassic Daedong Supergroup, which can be subdivided into grey shale, black shale and coal. The coal had been mined, however all the mines are abandonded due to the economic problems. The shale and coal are characterized by relatively low contents of $SiO_2$, and $Al_2O_3$ and high levels of loss-on-ignition (LOI), CaO and $Na_2O$ in comparison with the North American Shale Composite (NASC). Light rare earth elements (La, Ce, Yb and Lu) are highly enriched with the coal. Ratios of $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ in shale and coal range from 30.0 to 351.8 and from 4.2 to 106.8, which have partly negative correlations against $SiO_2/Al_2O_3$ (1.24 to 6.06), respectively. Those are suggested that controls of mineral compositions in shale and coal can be due to substitution and migration of those elements by diagenesis and metamorphism. Shale and coal of the area may be deposited in terrestrial basin deduced from high C/S (39 to 895) and variable composition of organic carbon (0.39 to 18.40 wt.%) and low contents of reduced sulfur (0.01 to 0.05 wt.%). These shale and coal were originated from the high grade metamorphic and/or igneous rocks, and the rare earth elements of those rocks are slightly influenced with diagenesis and metamorphism on the basis of $Al_2O_3$ versus La, La against Ce, Zr versus Yb, the ratios of La/Ce (0.38 to 0.85) and Th/U (3.6 to 14.6). Characteristics of trace and rare earth elements as Co/Th (0.07 to 0.86), La/Sc (0.31 to 11.05), Se/Th (0.28 to 1.06), V/Ni (1.14 to 3.97), Cr/V (1.4 to 28.3), Ni/Co (2.12 to 8.00) and Zr/Hf (22.6~45.1) in the shale and coal argue for inefficient mixing of the simple source lithologies during sedimentation. These rocks also show much variation in $La_N/Yb_N$ (1.36 to 21.68), Th/Yb (3.5 to 20.0) and La/Th (0.31 to 7.89), and their origin is explained by derivation from a mixture of mainly acidic igneous and metamorphic rocks. Average concentrations in the shale and coal are As=7.2 and 7.5, Ba=913 and 974, Cr=500 and 145, Cu=20 and 26, Ni=38 and 35, Pb=30 and 36, and Zn=77 and 92 ppm, respectively, which are similar to those in the NASC. Average enrichment indices for major elements in the shale (0.79) and coal (0.77) are lower than those in the NASC. In addition, average enrichment index for rare earth elements in coal (2.39) is enriched rather than the shale (1.55). On the basis of the NASC, concentrations of minor and/or environmental toxic elements in the shale and coal were depleted of all the elements examined, excepting Cr, Pb, Rb and Th. Average enrichment indices of trace and/or potentially toxic elements (As, Cr, Cu, Ni, Pb, U and Zn) are 1.23 to 1.24 for shale and 1.06 to 1.22 for coal, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.