• 한국수소및신에너지학회논문집
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• 제11권3호
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• pp.127-136
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• 2000

Molecular dynamics simulations have been carried out to investigate the scattering and penetration properties of hydrogen ions with the normal incident angle to Ni (100) surface. The initial kinetic energies of hydrogen ions range from 100 to 1,600 eV. The simulation results are used to assess the applicabilities of theoretical predictions based on the binary collision approximation, and, in the high kinetic regime, theoretical results for scattering energies were shown to he a good agreement with molecular simulations. The angle dependencies on both scattering and penetration distributions were found in the longitudinal direction, but not in the azimuthal direction except for the high kinetic energy of 1,600 eV.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.109-110
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• 2000

Sputtering yield of MgO film in the AC-PDPs has been calculated by Monte Carlo simulation of ion scattering. In the ion energy range less than 50 eV, the sputtering yield is 4 ${\times}$ $10^{-4}$ for Xe ions and it is between 0.1 and 0.01 for He, Ne, and Ar ions. The erosion rate is estimated about $25{\AA}$ per hour for Xe ions in an actual PDP plasma for sustain and full white mode.

• Bulletin of the Korean Chemical Society
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• 제13권1호
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• pp.83-87
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• 1992

The ring expansion of 1,3-thiazolidines 4 derived from ${\beta}$-ketoacid derivatives to the corresponding dihydro-1,4-thiazines 1 by using the action of chlorine on 4 has been achieved. In the chlorinolysis unisolable sulfenyl chlorides 5 may be formed from chlorosulfonium ions 11 by ${\beta}$-elimination involving carbonyl activated methylene hydrogens. Addition of sulfenyl chloride to the internal double bond appears to form probable thiiranium ions 14, which in turn gave 1 with loss of acidic proton. Imminium ions 15 could be hydrolyzed easily to give enol 8. As a side reaction, dihydrothiazine that was formed was further chlorinated to produce dichlorides 16 which were rearranged readily to the chloromethyl compounds 10.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.688-692
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• 2002

The aminomethylation of phenols with para-substituents by the Mannich reaction has successfully been accomplished to produce the Mannich bases 2-6. The compounds 7-8 have also been synthesized in order to identify the effect of the side arms and t he macrocycle in the complex formation. Protonation constants and stability constants of the double armed diaza-18-crown-6 ethers 2-7 with metal ions have been determined by potentiometric method at 25 $^{\circ}C$ in 95 % methanol solution. Under a basic condition (pH > 8.0), the double-armed crown ethers 2-6 revealed stronger interaction with divalent metal ions than the simple diazacrown ether 1. The stability constants with these metal ions were Co 2+ < Ni2+ < Cu2+ > Zn 2+ in increasing order, which are in accordance with the order of the Williams-Irving series. The stability constants with alkali earth metal ions were Ca 2+ < Sr 2+ < Ba 2+ in increasing order, which may be explained by the concept of size effect. It is noteworthy that the hosts 2-6, which have phenolic side arms and a macrocycle, bind stronger with metal ions than the hosts 1 and 7. On the other hand, the host 8, which has phenolic side arms with a pyperazine ring,provided comparable stability constants to those with the host 3. These facts demonstrate that phenolic side arms play a more important role than the azacrown ether ring in the process of making a complex with metal ions especially in a basic condition. In particular, the log KML values for complexation of divalent metal ions with the hosts 2-6 had the sequence, i.e., 2 (R=OCH3) < 3 (R=CH3) < 4 (R=H) < 5 (R=Cl) < 6 (R=CF3). The stability constants of the hosts 5 and 6 containing an electron-withdrawing group are larger than those of the hosts 2 and 3 containing an electron-donating group. This substituent effect is attributed to the solvent effect in which the aryl oxide with an electron-donating group has a tendency to be tied strongly with protic solvents.

• Nuclear Engineering and Technology
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• 제56권2호
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• pp.419-425
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• 2024

The purpose of this study is to improve the concentration of U(VI) in carbonate solution reasonably, which to improve the application potential of the alkaline reprocessing processes. The dissolution behavior of U₃O₈ in carbonate peroxide solutions was investigated under different conditions, including pH, carbonate concentration, and solid-liquid ratio. The results showed that the dissolution rate of U₃O₈ increased with the increase of pH from 8 to 11 in the mixed carbonate solution containing 0.5 mol/L H₂O₂. The role of carbonate ions in the dissolution of U₃O₈ was further elucidated by observing the dissolution of UO₄⋅4H₂O in carbonate solutions. Furthermore, the concentration of U(VI) in 3 mol/L Na₂CO₃ solution was successfully increased to 350 g/L under ultrasonic-assisted conditions at 60 ℃ and a solid-liquid ratio at 1/2 g/mL. Meanwhile, it is suggested that increasing the concentration of carbonate ions can improve the stability of the dissolved solution containing uranyl peroxycarbonate complex.

• Nuclear Engineering and Technology
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• 제54권6호
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• pp.1947-1953
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• 2022

As the plasma facing material in the nuclear fusion reactor, tungsten has to bear the irradiation impact of high energy particles. The surface quality of tungsten may affect its irradiation resistance, and even affect the service life of fusion reactor. In this paper, tungsten samples with different surface quality were polished by mechanical processing, subsequently conducted by D₂⁺ implantation and thermal desorption. D₂⁺ implantation was performed at room temperature (RT) with the irradiation dose of 1 × 10²¹ D₂⁺/m² by 5 keV D₂⁺ ions, and thermal desorption spectroscopy measurements were done from RT to 900 K. In addition, He irradiation was also performed by 50 eV He⁺ ions energy with the fluxes of 5.5 × 10²¹ m^-2s^-1 and 1.5 × 10²² m^-2s^-1, respectively. Results reveal that the hydrogen/helium irradiation behavior are both related to surface quality. Samples with high surface quality has superior D₂⁺ retention behavior with less D₂ retained after implantation. However, such samples are more likely to generate fuzzes on the surface after helium irradiation. Different morphologies (smooth, wavy, pyramids) after helium irradiation also demonstrates that the surface morphology is related to tungsten crystallographic orientation.

• 한국표면공학회지
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• 제34권5호
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• Tribology and Lubricants
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• 제23권1호
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• pp.14-18
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• 2007

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}N^{+}cm^{-2}$. Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.47-50
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• 2006

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}\;N^+cm^{-2}$ Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.237.1-237.1
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• 2011

Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.