• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• 한국표면공학회지
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• 제50권4호
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• pp.282-288
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• 2017

$Eu^{3+}$- or $Sm^{3+}$-doped $La_2MoO_6$ phosphors were synthesized with different concentrations of activator ions via a solid-state reaction. The X-ray diffraction patterns exhibited that crystalline structures of all the phosphors were tetragonal systems with the dominant peak occurring at (103) plane, irrespective of the concentration and the type of activator ions. The crystallites showed the pebble-like crystalline shapes and the average crystallite size increased with a tendency to agglomerate as the concentration of $Eu^{3+}$ ions increased. The excitation spectra of $Eu^{3+}$-doped $La_2MoO_6$ phosphors contained an intense charge transfer band centered at 331 nm in the range of 250-370 nm and three weak peaks at 381, 394, and 415 nm, respectively, due to the $^7F_0{\rightarrow}^5L_7$, $^7F_0{\rightarrow}^5L_6$, and $^7F_0{\rightarrow}^5D_3$ transitions of $Eu^{3+}$ ions. The emission spectra under excitation at 331 nm exhibited a strong red band centered at 620 nm and two weak bands at 593 and 704 nm. As the concentration of $Eu^{3+}$ increased from 1 to 20 mol%, the intensities of all the emission bands gradually increased. For the $Sm^{3+}$-doped $La_2MoO_6$ phosphors, the emission spectra consisted of an intense emission band at 607 nm arising from the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition and three relatively small bands at 565, 648, and 707 nm originating from the $^4G_{5/2}{\rightarrow}^6H_{5/2}$, $^4G_{5/2}{\rightarrow}^6H_{9/2}$, and $^4G_{5/2}{\rightarrow}^6H_{11/2}$ transitions of $Sm^{3+}$, respectively. The intensities of all the emission bands approached maxima when concentration of $Sm^{3+}$ ions was 5 mol%. These results indicate that the optimum concentrations for highly-luminescent red and orange emission are 20 mol% of $Eu^{3+}$ and 5 mol% of $Sm^{3+}$ ions, respectively.

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2740-2747
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• 2024

The sintering process acquired ferromagnetic copper ferrite ceramic material with a small concentration of Ni ion at 1100 ℃ for 1 h. Previously, copper ferrite with Ni proportions powder was acquired by the wet chemical process according to the relation CuFe_2-xNi_xO₄ where x takes values 0.0, 0.015, 0.03, 0.04, and 0.05. The role of Ni ion in the copper ferrite structure was investigated by X-ray analysis, Scanning electron microscope, EDX analysis, and density measurements. The gamma-ray shielding properties for the fabricated CuFeNiO ceramics samples were evaluated using the Monte Carlo simulation method. The obtained results show an enhancement in the linear attenuation coefficient for the fabricated ceramics with increasing the insertions of Ni ions within the fabricated samples, where increasing the Ni ions concentration between 0 and 1.19 wt% increases the linear attenuation by between 1.581 and 1.771 cm^-1 (at 0.103 MeV), 0.304-0.338 cm^-1 (at 0.662 MeV), and 0.160-0.178 cm^-1 (at 2.506 MeV), respectively. Simultaneously, the radiation protection efficiency for a 1 cm thickness of the fabricated samples increased between 14.8 and 16.3% with increasing the Ni ions between 0 and 1.19 wt%. Although the Ni doping concentration does not exceed 1.5 wt% of the total composition of the fabricated ceramics, the shielding capacity of the fabricated ceramics was enhanced by more than 11%, along the studied energy interval. Therefore, the fabricated samples can be used in gamma-ray shielding applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.460-463
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2067-2072
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• 2013

Hydrogen ($H_2$) treatment using a two-step $TiO_2$ nanotube (TONT) film was performed under various annealing temperatures from $350^{\circ}C$ to $550^{\circ}C$ and significantly influenced the extent of hydrogen treatment in the film. Compared with pure TONT films, the hydrogen-treated TONT (H:TONT) film showed substantial improvement of material features from structural, optical and electronic aspects. In particular, the extent of enhancement was remarkable with increasing annealing temperature. Light absorption by the H:TONT film extended toward the visible region, which was attributable to the formation of sub-band-gap states between the conduction and valence bands, resulting from oxygen vacancies due to the $H_2$ treatment. This increased donor concentration about 1.5 times higher and improved electrical conductivity of the TONT films. Based on these analyses and results, photoelectrochemical (PEC) performance was evaluated and showed that the H:TONT film prepared at $550^{\circ}C$ exhibited optimal PEC performance. Approximately twice higher photocurrent density of 0.967 $mA/cm^2$ at 0.32 V vs. NHE was achieved for the H:TONT film ($550^{\circ}C$) versus 0.43 $mA/cm^2$ for the pure TONT film. Moreover, the solar-to-hydrogen efficiency (STH, ${\eta}$) of the H:TONT film was 0.95%, whereas a 0.52% STH efficiency was acquired for the TONT film. These results demonstrate that hydrogen treatment of TONT film is a simple and effective tool to enhance PEC performance with modifying the properties of the original material.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.497-497
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• 2013

Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.18-26
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• 1999

In this study, the undoped amorphous layers and phosphorus doped amorphous layers are fabricated using LPCVD at 531$^{\circ}C$ with SiH$_4$ gas or at same temperature with PH$_3$ gas during deposition, respectively. The thickness of deposited amorphous layer from this experiments was 5000 ${\AA}$. In this experiments, undoped amorphous layers are deposited with SiH$_4$and Si$_2$H$\_$6/ gas in a low pressure reactor using LPCVD. These amorphous layers can be doped for poly-silicon by phosphorus ion implantation. The experiments of this study are carried out by phosphorus ion implantation with energy 40 keV into P doped and undoped amorphous silicon layers. The distribution of phosphorus profiles are measured by SIMS(Cameca 6f). Recoiling effects and two dimensional profiles are also explained by comparisions of experimental and simulated data. Finally range moments of SIMS profiles are calculated and compared with simulation results.

• 한국재료학회지
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• 제13권3호
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• pp.180-184
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• 2003

Ce-doped $Y_2$SiO$_{5}$ phosphor particles of spherical morphology, fine size, high crystallinity and high photoluminescence (PL) intensity were prepared by spray pyrolysis. When nitrate precursor solution is adopted, hollow particles were formed by uneven drying rate between surface and inside of droplet. Citric acid and ethylene glycol were introduced as polymeric precursor to control the morphology of particles. When polymeric solution is adopted, polymeric chain is formed by the esterification reaction between carboxyl and hydroxy groups of citric acid and ethylene glycol, and considered as controlling the drying characteristics of droplet. $Y_2$$SiO_{5}$ :Ce phosphor particles prepared from polymeric precursor solution were spherical, filled, fine size and not agglomerate before and after post heat treatment. The optimum doping concentration of cerium was 0.5 mol% of overall solution concentration. The optimum amount of TBOS of high PL intensity and pure crystallinity of X2-type $Y_2$$SiO _{5}$ was 105% of stoichiometric amount. The PL intensity of $Y_2$X$/_{5}$ :Ce phosphor particles prepared using the polymeric precursor solution was 164% of that of the nitrate precursor solution due to homogeneous composition and good morphology.y.