• Title/Summary/Keyword: $CuLaO_2$

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Preparation and Structure Properties of LaBa2Cu2O9, LaBa22CaCu3O12 and LaBa2Ca2Cu5O15 Perovskites

  • Kareem Ali Jasim;Hind Abdulmajeed Mahdi;Rafah Ismael Noori;Marwa Ayad Abdulmajeed
    • Korean Journal of Materials Research
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    • v.33 no.9
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    • pp.367-371
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    • 2023
  • In this study we examine variations in the structure of perovskite compounds of LaBa2Cu2O9, LaBa22CaCu3O12 and LaBa2Ca2Cu5O15 synthesized using the solid state reaction method. The samples' compositions were assessed using X-ray fluorescence (XRF) analysis. The La: Ba: Ca: Cu ratios for samples LaBa2Cu2O9, LaBa22CaCu3O12 and LaBa2Ca2Cu5O15 were found by XRF analysis to be around 1:2:0:2, 1:2:1:3, and 1:2:2:5, respectively. The samples' well-known structures were then analyzed using X-ray diffraction. The three samples largely consist of phases 1202, 1213, and 1225, with a trace quantity of an unknown secondary phase, based on the intensities and locations of the diffraction peaks. According to the measured parameters a, b, and c, every sample has a tetragonal symmetry structure. Each sample's mass density was observed to alter as the lead oxide content rose. Scanning electron microscope (SEM) images of the three phases revealed that different Ca-O and Cu-O layers can cause different grain sizes, characterized by elongated thin grains, without a preferred orientation.

LPE GROWTH OF $La_{2-x}Sr_xCuO_4$ SINGLE-CRYSTALLINE FILMS

  • Tanaka, Isao;Tanabe, Hideyoshi;Watauchi, Satoshi;Kojima, Hironao
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.371-387
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    • 1999
  • La2-xSrxCuO4 single-crystalline films were prepared on bulk single crystals of Zn-doped La2CuO4 as the substrates by LPE technique using tow deferent methods. When prepared using an alumina crucible in normal electrical furnace, the La2-xSrxCuO4 films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the La2-xSrxCuO4 films. For LPE growthby modified TSFZ method using an infrared heating furnace without crucibles, the La2-xSrxCuO4 films of x=0.11 showed superconducting with Tconset 36 K, which is 10 K higher than that in the La2-xSrxCuO4 bulk single crystals.

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Infrared Spectroscopic Evidences for the Superconductivity of $La_2CuO_4$-related Compounds: A Superconductivity Probe

  • Park, Jeong Cheol;Jo, Seon Woog;Jeong, Jong Hak;Jeong, Gi Ho
    • Bulletin of the Korean Chemical Society
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    • v.21 no.10
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    • pp.1041-1043
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    • 2000
  • We present the effects of temperature (between 10 K and 298 K) and of hole concentration on the frequency and intensity of characteristic phonons in polycrystalline $La_2CuO_4-related$ compounds using FT-IR spectros-copy. The influences of the concentration of carrier doped on the phonon modes are prominent in the IR spectra of $La_2CuO_4-related$ compounds. For $La_2-xSrxCuO_4({\chi}=$ 0.00, 0.03, 0.07, 0.10, and 0.15) and electrochemically (or chemically) oxidized $La_2CuO_4$, the intensities of the transverse oxygen mode around 680cm $-^1$ which cor-responds mainly to Cu-O(1) stretching vibration in the basal plane of CuO6 octahedron, are decreased and dis-appeared depending on the Sr-substitution rate and the amount of excess oxygen, while the longitudinal oxygen mode around 510 cm $-^1$ corresponding to the Cu-O(2) stretching in the basal plane of CuO6 octahedron are near-ly invariable. In particular, after two cycles of cooling-heating between 10 K and 298 K for these sample, the phonons around 680 cm $-^1$ are blue shif 13-15 cm $-^1$, while the phonons around 510 cm $-^1$ are nearly constant. The introduction of the charge carrier by doping would give rise to the small contraction of CuO6 oc-tahedron as Cu $^3+$ requires a smaller site than Cu $^2+$, which results in the shortening of the Cu-O(1) bond length and Cu-O(2) bond length with the increased La-O(2) bond length. These results in the frequency shift of the characteristic phonons. The IR spectra of $La_2Li0.5Cu0.5O_4$ which exhibits an insulator behavior despite the $Cu^3+$ of nearly 100%, corroborate our IR interpretations. The mode around 710 cm $-^1$ corresponding to Cu-O(1) stretching vibration is still strongly remained even at low temperature (10 K). Thus, we conclude that the con-duction electrons formed within $CuO_2$ planes of $La_2CuO_4-related$ superconductors screen more effectively the transverse oxygen breathing mode around 680 $cm-^1$ depending on the concentration of the doped charge carrier in $La_2CuO_4-related$ compounds, which might use as a superconductivity probe.

LPE growth of $La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films

  • Tanaka, Isao;Tanabe, Hideyoshi;Watauchi, Satoshi;Kojima, Hironao
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.3
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    • pp.299-302
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    • 1999
  • $La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films were prepared on bulk single crystals of Zn-doped $La_{2-x}Sr_{x}CuO_{4}$ as the substrates by LPE technique using two deferent methods. When prepared using an alumina crucible in normal electrical furnace, the $La_{2-x}Sr_{x}CuO_{4}$ films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the $La_{2-x}Sr_{x}CuO_{4}$ films, For LPE growth by modified TSFZ method using an infrared heating furnace without crucibles, the $La_{2-x}Sr_{x}CuO_{4}$ films of x=0.11 showed superconducting with $Tc_{onset}=36\;K$, which is 10 K higher than that in the $La_{2-x}Sr_{x}CuO_{4}$ bulk single crystals.

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Lattice strain effects on superconductivity in $La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films grown by IR-LPE technique

  • Tanaka, I.;Islam, A.T.M.N.;Wataudhi, S.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.4
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    • pp.172-175
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    • 2003
  • We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown $La_{2-x}Sr_{x}CuO_{4}$(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g., $La_{2-x}Sr_{x}Cu_{1-y}Zn_{y}O_{4},\;La_{2-x}Ba_{x}CuO_{4},\; LaSrAlO_{4}\;and\;La_{2-x}Sr_{x}Cu_{1-y}Al_{y}O_{4}$ etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.

Spectroscopic Studies on the High-$T_c$ Superconducting $La_2CuO_{4-δ}$ Prepared by Electrochemical Oxidation

  • 박정철;Alain Wattiaux;Jean-Claude Grenier;김동훈;최진호
    • Bulletin of the Korean Chemical Society
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    • v.18 no.9
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    • pp.916-922
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    • 1997
  • A superconducting phase La2CuO4+δ (Tc=44 K) has been prepared by electrochemical oxidation which allows the oxygen to intercalat into the La2O2 layers. According to the Cu K-edge X-ray absorption near edge structure spectroscopic analysis, the oxidized phase shows an overall spectra shift of about 0.5 eV to a higher energy region compared to the as sintered one with the occurrence of an additional peak corresponding to the transition to the |1s13dn+1L-14pσ1 > final state, indicating the oxidation of CuO2 layer. From the X-ray photoelectron spectroscopic studies, it is found that the binding energy of La 3d5/2 is significantly shifted from 834.3 eV (as sintered La2CuO4) to 833.6 eV (as electrochemically oxidized La2CuO4+δ), implying that the covalency of the (La-O) bond is decreased due to the oxygen intercalation. The O 1s spectra do not provide an evidence of the superoxide or peroxide, but the oxide (O2-) with the contaminated carbonate (CO32-) based on the peaks at 529 eV and 532 eV, respectively, which is clearly confirmed by the Auger spectroscopic analysis. Oxygen contents determined by iodometric titration (δ=0.07) and thermogravimetry (δ=0.09) show good coincidence each other, also giving an evidence for the "O2-" nature of excess oxygen. From the above results, it is concluded that "O2-" appeared as O 1s peak at 528.6 eV is responsible for superconductivity of La2CuO4+δ.

Synthesis and Characterization of Delafossite $CuLaO_2$ for Thermoelectric Application

  • Takahashi, Yuhsuke;Matsushita, Hiroaki;Katsui, Akinori
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1114-1115
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    • 2006
  • The preparation of single-phase $CuLaO_2$ with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase $CuLaO_2$ was obtained by using $La(OH)_3$ as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of $La(OH)_3:Cu_2O=1:1.425$ in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that $CuLaO_2$ thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately $70{\mu}V/K$.

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Study on the reducibility of substituted $LaMnO_3$ (치환된 $LaMnO_3$의 환원반응성에 대한 연구)

  • Lee, Sang-Beom;Jeon, Hyun-Pyo
    • The Journal of Natural Sciences
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    • v.14 no.2
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    • pp.41-54
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    • 2004
  • $LaMnO_3$ and A site substituted $La_{0.9}Sr_{0.1}MnO_3$(a=$5.33\AA$, c=$13.27\AA$), B site substituted $LaMn_{0.9}Cu_{0.1}O_3$(a=$5.52\AA$, c=$13.31\AA$) mixed oxides were prepared by Citrate sol-gel method. The powder X-ray diffraction patterns of these oxides were indexed with single phase hexagonal perovskite structures. According to the TRR result, oxygen stoichiometry of these oxides were oxidative nonstoichiometry as like $LaMnO_{3.16}$, $La_{0.9}Sr_{0.1}MnO_{3.10}$ and $LaMn_{0.9}Cu_{0.1}O_{3.14}$ Reduction reactions of un-substituted $LaMnO_3$ was two steps, but specific site(A site of B site) partially substituted $LaMnO_3$ oxides were procees to three reactions.

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Epitaxial Growth of Pulsed-Laser Deposited Bi4Ti3O12/LaAlO3 Thin Films and Bi4Ti3O12/YBa2Cu3O7-x/LaAlO3 Heterostructure (펄스레이저 증착법으로 제작된 $Bi_4Ti_3O_{12}/LaAlO_3$ 박막과 $Bi_4Ti_3O_{12}/YBa_2Cu_3O_{7-x}/LaAlO_3$ 복합구조의 에피 성장)

  • Jo, Wol-Ryeom;Jo, Hak-Ju;No, Tae-Won
    • Korean Journal of Crystallography
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    • v.5 no.2
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    • pp.85-92
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    • 1994
  • Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.

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Study on the Selective CO Oxidation Using $La_xCe_{1-x}Co_yCu_{1-y}O_{3-{\alpha}}$ Perovskite Catalysts ($La_xCe_{1-x}Co_yCu_{1-y}O_{3-{\alpha}}$ Perovskite촉매의 선택적 CO 산화반응에 관한 연구)

  • Kang, Dae-Kyu;Lee, Young-Il;Sohn, Jung-Min
    • Journal of Hydrogen and New Energy
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    • v.18 no.1
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    • pp.32-39
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    • 2007
  • CO oxidation and selective CO oxidation of $La_xCe_{1-x}Co_yCu_{1-y}O_{3-{\alpha}}$ perovskite(x=1, 0.9, 0.7. 0.5; y=1, 0.9, 0.7, 0.5) were investigated. For CO oxidation, catalytic activities were studied according to different preparation conditions such as pH and calcination temperature. The influence of the change of the $O_2$ concentration for selective CO oxidation was studied, too. The substitution of Ce for La improved the catalytic activity for CO oxidation and selective CO oxidation and best activity was observed for $La_{0.7}Ce_{0.3}CoO_3$ prepared at pH 11 and calcined at $600^{\circ}C$. The temperature of 90% CO conversion for CO oxidation using $La_{0.7}Ce_{0.3}CoO_3$ was $230^{\circ}C$. In contrast to the enhancement effect by Ce substitution, the partial substitution of Cu for Co in $LaCo_yCu_{1-y}O_{3-{\alpha}}$ decreased catalytic activities for CO oxidation reaction compared to that using $LaCoO_3$. For selective CO oxidation, the best CO conversion was 66% at $230^{\circ}C$ for $La_{0.7}Ce_{0.3}CoO_3$. The CO conversion of $La_{0.7}Ce_{0.3}CoO_3$ was greatly increased from 66% to 91% as increasing $O_2$ concentration from 1% to 2%.