• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.401-401
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• 2016

Although vertically aligned one-dimensional (1D) structure has been considered as efficient forms for photoelectrode, development of efficient 1D nanostructured photocathode are still required. In this sense, we recently demonstrated a simple fabrication route for CuInS2 (CIS) nanorod arrays from aqueous solution by template-assisted growth-and-transfer method and their feasibility as a photoelectrode for water splitting. In this study, we further evaluated the photoelectrochemical properties surface-modified CIS nanorod arrays. Surface modification with CdS and ZnS was performed by successive ion layer adsorption and reaction (SILAR) method, which is well known as suitable technique for conformal coating throughout nanoporous structure. With surface modification of CdS and ZnS, both photoelectrochemical performance and stability of CuInS2 nanorod arrays were improved by shifting of the flat-band potential, which was analyzed both onset potential and Mott-schottky plot.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.988-996
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• 1995

CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.315-323
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• 1997

The sing1e crystal of cadmium sulfide was grown by vertical sublimation method. The lattice constants of CdS single crystal by extrapolation method are $a_0=4.139\AA$ and $c_0=6.719\AA$, respectively. The $Cu_2$S/CdS solar cell was fabricated using the single crystal of cadmium sulfide and the CuCl solution. The light- to- dark JV cross over effect of the $Cu_2$S/CdS solar cell was measured after annealing for 2 minutes at $250^{\circ}C$ in air atmosphere. The values of Voc, Jsc, Vop, FF, and efficiency are 0.40 volt, $4.2mA/\textrm{cm}^2$, 0.31 volt, $3.8mA/\textrm{cm}^2$, 0.68 and 3.8 %, respectively. The spectral response of the solar cell shows the peaks at 498 nm (2.49 eV) and 585 nm (2.12 eV).

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• The Plant Pathology Journal
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• v.40 no.3
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• pp.261-271
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• 2024

Sulfur is one of the inorganic elements used by plants to develop and produce phytoalexin to resist certain diseases. This study reported a method for preparing a material for plant disease resistance. Sulfur nanoparticles (SNPs) stabilized in the chitosan-Cu²⁺ (CS-Cu²⁺) complex were synthesized by hydrolysis of Na₂S₂O₃ in an acidic medium. The obtained SNPs/CS-Cu²⁺ complex consisting of 0.32% S, 4% CS, and 0.7% Cu (w/v), contained SNPs with an average size of ~28 nm as measured by transmission electron microscopy images. The X-ray diffraction pattern of the SNPs/CS-Cu²⁺ complex showed that SNPs had orthorhombic crystal structures. Interaction between SNPs and the CS-Cu²⁺ complex was also investigated by ultraviolet-visible. Results in vitro nematicidal effect of materials against Meloidogyne incognita showed that SNPs/CS-Cu²⁺ complex was more effective in killing second-stage juveniles (J2) nematodes and inhibiting egg hatching than that of CS and CS-Cu²⁺ complex. The values of LC₅₀ in killing J2 nematodes and EC₅₀ in inhibiting egg hatching of SNPs/CS-Cu²⁺ complex were 75 and 51 mg/l, respectively. These values were lower than those of CS and the CS-Cu²⁺ complex. The test results on the nematicidal effect against M. incognita on coffee pots showed that the SNPs/CS-Cu²⁺ complex was 100% effective at a concentration of 150 mg/l. Therefore, the SNPs/CS-Cu²⁺ complex could be considered as a biochemical material with potential for agricultural applications to control root-knot nematodes.

• Bulletin of the Korean Chemical Society
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• v.35 no.9
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• pp.2813-2817
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• 2014

A new magnetic semiconductor material was synthesized to enable separation after a liquid-type photocatalysis process. Core@shell-structured $CuFeS_2@TiO_2$ magnetic nanoparticles were prepared by a combination of solvothermal and wet-impregnation methods for photocatalysis applications. The materials obtained were characterized using X-ray diffraction, transmission electron microscopy, ultraviolet-visible, photoluminescence spectroscopy, Brunauer-Emmett-Teller surface area measurements, and cyclic voltammetry. This study confirmed that the light absorption of $CuFeS_2$ was shifted significantly to the visible wavelength compared to pure $TiO_2$. Moreover, the resulting hydrogen production from the photo-splitting methanol/water solution after 10 hours was more than 4 times on the core@shell structured $CuFeS_2@TiO_2$ nanocatalyst than on either pure $TiO_2$ or $CuFeS_2$.

• Applied Microscopy
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• v.35 no.4
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• pp.1-9
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• 2005

In this paper it is reported that a comprehensive study of the crystal structure of the fine size S-phase ($Al_2CuMg$) precipitate in Al-Cu-Mg alloy by electron diffraction experiments. The experiments involve taking the selected area diffraction pattern for a S-phase particle, simulations of the pattern based on the kinematical diffraction theory and quantitative data collection from the zone axis diffraction patterns for the comparison with calculated diffraction intensity using both the kinematical and the dynamical diffraction theory. As a result, a good fitting model of the S-phase structure turns out to be the model reported early by X-ray methods (Perlitz & Westgren, 1943), not the new model determined by HRTEM methods (Radmilovic et al., 1999).

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.