• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• 한국결정성장학회지
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• 제28권3호
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• pp.112-117
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• 2018

금속 알콕사이드인 CuCo-glycerate 나노구의 용매열합성 과정을 통해 단분산된 Cu-Co 이중 금속 황화물 계층적 중공 구조의 나노구($CuCo_2S_4$ HMHNSs)를 합성하는데 성공하였다. 이 반응 메커니즘에서 용매열합성 온도와 보조 계면활성제인 glycerol의 양은 CuCo-glycerate 나노구의 형태를 최적화하는데 중요한 역할을 한다. 또한 $CuCo_2S_4$ HMHNSs는 glycerate와 황 이온 간의 음이온 교환 반응을 통해 10시간의 최적화된 황화 반응 조건하에서 성공적으로 합성되었다. 최종적으로 합성된 물질의 구조적, 화학적 특성은 SEM, TEM, XRD와 전기화학적 특성 평가에 의해 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.181-181
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• 1999

Self-assembled monolayers(SAMs) of alkanethiol have been formed on the Cu(111) surfaces in vacuum. The thermal behavior of octanethiol-based SAMs on the Cu(111) surface have been examined in ultrahigh vacuum. Using X-ray photoelectron spectroscopy (XPS), it is found that the monolayers are stable up to about 500K in vacuum. Decomposition is signaled by a decrease in the intensity of C ls peak, accompanied by an increase of the intensity of the Cu 2p peak. However, the intensity of the S 2p peak doesn't change much as a function of annealing temperature. Thermal the decomposition mass spectra show that n-alkene is the predominant species desorbing from the surface in the 500-600K temperature range. The totality of these data leads to the conclusion that the monolayers decompose through the S-C bond cleavage by hydrogen elimination reaction, resulting in the desorption of hydrocarbon moiety as n-alkene. Following this initial decomposition step, Cu2S layers are observed on the surface. For comparison, attempts were also made to examine the thermal behavior of octanethiol-based SAMs on the Cu(111) surface in air. It has been shown that the SAMs on the Cu(111) surfaces begin to desorb with the oxidation of the thiolate to sulfonate at 400K. Upon annealing to 450K, the monolayer has almost completely desorbed as indicated by the virtual disappearance of the S 2p peak.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.73-73
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• 2000

Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

• 한국결정학회지
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• 제7권1호
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• pp.44-56
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• 1996

CuInTe2 다결정은 수평전기로에서 합성하고, CuInTe2 단결정은 수직 Bridgman 방법으로 성장하여 결정구조를 조사하고, Hall 효과를 30K에서 293K의 온도영역에서 측정하였다. CuInTe2 다결정 및 단결정은 정방정계였다. 다결정의 격자상수는 a=6.168Å, c=12.499Å 그리고 c/a=2.026이었고, 단결정의 격자상수는 a=6.186Å, c=12.453Å, 그리고 c/a=2.013이었다. CuInTe2 단결정의 성장면은 Laue 배면반사 사진으로부터 구하였으며 (112)면이었다. CuInTe2 단결정의 Hall 효과는 van der Pauw 방법으로 측정하였다. 상온에서 측정된 c축에 수직한 시료의 운반자농도 p는 2.14×1023holes/m3, 전기전도도 δ는 739.58Ω-1m-1 그리고 이동도 μ는 2.16×10 m2/V·s 이었다. c축에 평행한 시료의 운반자농도 p는 1.51×1023holes/m3, 전기전도도 σ는 717.55Ω-1m-1 그리고 이동도 μ는 2.97×10-2 m2/V·s이었다. c축에 수직 및 평행한 시료의 Hall계수가 양의 값이어서 CuInTe2 단결정은 p형 반도체임을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.467-468
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• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• 에너지공학
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• 제5권1호
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• pp.65-71
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• 1996

Ni-Cu를 SiO$_2$에 담지시켜 공간속도(Space Velocity; S.V), 메탄올 분압, 반응온도 및 Ni-Cu 조성비에 따른 메탄올 분해 반응의 활성을 조사하였다. S.V는 10,000~30,000h$^{-1}$, 반응온도는 150~40$0^{\circ}C$까지 변화시켰으며 Cu/(Ni＋Cu)비는 0, 0.25, 0.5, 0.75, 1로 변화시켜 보았다. Ni 단일 촉매의 경우 온도가 상승하면서 전환율이 100%에 도달함에 따라 CO의 선택도가 급감소하는 반면 Ni에 Cu를 첨가함으로써 높은 선택도를 유지하였다. 반응의 주생성물로서 CO와 H$_2$가 생성되었고 $CO_2$와 CH$_4$가 부생성물로서 주로 생성되었다.

• 한국수소및신에너지학회논문집
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• 제32권6호
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• pp.663-668
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• 2021

For the development of highly efficient quantum dot-sensitized solar cells (QDSCs), it is important to enhance the electrocatalytic activity of the counter electrodes (CEs). Herein, a fabrication process of Cu₂S CEs are optimized for the development highly efficient QDSCs. The surface of brass film is treated with HCl solution to prepare the Cu₂S CEs, and the concentraion as well as the temperature of HCl solution are controlled. It is found that the uniformity for the thickness of prepared Cu₂S CEs is enhanced when the diluted HCl solution is used, compared to the HCl solution of standard concentration. In addition, the electrocatalytic activity of the Cu₂S CEs is also increased with the modificed process, which is confirmed by impedance data and Tafel polarization curves. As a result, the photoconversion efficiency of QDSCs is improved from 4.49% up to 5.73%, when the concentraion and temperature of the HCl treatment are efficiently optimized.

• 대한전자공학회논문지SD
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• 제37권1호
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• pp.36-43
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• 2000

청색 발광 SrS:CuCl TFEL 소자의 휘도를 향상시키기 위하여 황 압력과 열처리 조건을 최적화하여 SrS:CuCl TFEL 소자를 제작하였다. 전자빔 증착 장비를 이용하여 SrS:CuCl 형광체를 6000 ~ 8000 ${\AA}$ 두께로 증착 시킨 후, 800 $^{\circ}C$에서 3분 동안 열처리하여 TFEL 소자를 제작시켰다. 형광체 결정은 열처리 온도 및 열처리 지속 시간의 증가에 따라 향상되었다. SrS:CuCl TFEL 소자는 468 nm 와 500 nm에서 발광 피크 파장을 나타내었고, CIE 색 좌표는 x = 0.21, y = 0.33로 청색 빛이 방출되었다. SrS:CuCl TFEL 소자의 휘도$(L_{40})$는 형광체 증착 중의 황 압력에 크게 의존하여 황 압력을 $8{\times}10^{-6}$ torr에서 $2{\tiems}10^{-5}$ torr로 증가시켰을 때 262 cd/$m^2$에서 728 cd/$m^2$로 증가되었다.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.584-588
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• 2009

Layered ZnS/$CaF_2$/ZnS/Cu film was deposited on glass substrate by using evaporation method. ZnS and $CaF_2$ were chosen as high and low refractive materials. Cu was used as mid-reflective layer. Reflectance with different optical thickness of $CaF_2$ ranging from $0.25{\lambda}\;to\;0.5{\lambda}$ were systematically investigated by using spectrophotometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer, the ZnS/$CaF_2$/ZnS/Cu multi-layered thin film show the maximum reflectance of 80% at 625nm $(0.25{\lambda}\;in\;CaF_2)$ and 42% at 660nm $(0.5{\lambda}\;in\;CaF_2)$ respectively. As compared with the experimental results and simulation data, it was confirmed the experimental data is well matched with the EMP data.