• Journal of the Korean Society for Heat Treatment
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• v.12 no.3
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• pp.221-230
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• 1999

The surface nitrogen permeation of Al alloyed 0.14%C-13%Cr stainless steels was investigated after heat treating at $1050^{\circ}C{\sim}1150^{\circ}C$ in the nitrogen gas atmosphere. The strong affinity between Al and nitrogen permeates the nitrogen through the interior of the steels. Two precipitates of round type and needle type are observed at the surface layer. These precipitates mainly consist of AlN containing plenty of aluminum. The surface layer of 0.53%Al alloyed specimen shows ferrite phase, while the surface layers of 1.65%Al and 2.27%Al alloyed specimens appear ${\gamma}$ plus ${\alpha}$ phases. The depth of nitrogen permeation depends upon the Al content and microstructure of the matrix. The 1.65%Al alloyed specimen representing ${\alpha}+{\gamma}$ matrix phases at the nitrogen permeation temperature shows the maximum case depth in this experiment. Although the surface hardness increases by raising the Al content of the specimen owing to the increase of nitride precipitation density, the nitride precipitation deteriorates the corrosion resistance in the solution of HCl, $H_2SO_4$, and $FeCl_3$.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Corrosion Science and Technology
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• v.13 no.2
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• pp.48-55
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• 2014

Influence of annealing temperature on the microstructure and resistance to pitting corrosion of the hyper duplex stainless steel was investigated in acid and neutral chloride environments. The pitting corrosion resistance is strongly dependent on the microstructure, especially the presence of chromium nitrides ($Cr_2N$), elemental partitioning behavior and volume fraction of ferrite phase and austenite phase. Precipitation of deleterious chromium nitrides reduces the resistance to pitting corrosion due to the formation of Cr-depleted zone. The difference of PREN (Pitting Resistance Equivalent Number) values between the ferrite and austenite phases was the smallest when solution heat-treated at $1060^{\circ}C$. Based on the results of electrochemical tests and critical crevice temperature tests, the optimal annealing temperature is determined as $1060^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.2
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• pp.83-89
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• 2006

The surface phase changes, the hardness variations, the nitrogen contents and the corrosion resistances of 17-4 PH stainless steel have been investigated after nitrogen permeation(solution nitriding) at a temperature ranges from $1050^{\circ}C$ to $1150^{\circ}C$ The phases appeared at the nitrogen-permeated surface layer were shown to martensite plus austenite and austenite, depending on the variation of nitrogen and chromium contents. And the surface hardness was also depended on the phases appeared at the surface layer from 370 Hv to 220 Hv. The precipitates exhibited at the nitrogen-permeated surface layer were niobium nitride, niobium chromium nitride and carbo-nitride in the austenite and martensite matrices. The surface nitrogen contents were followed by the Cr contents of the surface layers, representing 0.55% at the temperatures of $1050^{\circ}C$ and $1150^{\circ}C$ respectively, and 0.96% at $1100^{\circ}C$ at the distances of $60{\mu}m$ from the outmost surface. From the comparison of the corrosion resistances between nitrogen-permeated and solution-annealed steels, nitrogen permeation remarkably improved the corrosion resistance in the solution of 1 N $H_2SO_4$ due to the increase of nitrogen content in the surface austenite phase.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.323-328
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• 2007

This study has been investigated the effect of high temperature gas nitriding (HTGN) heat treatment of STS 444 (18Cr-0.01Ni-0.01C-0.2Nb) ferritic stainless steel in an atmosphere of nitrogen gas at the temperature range between $1050^{\circ}C\;and\;1150^{\circ}C$. The surface layer was changed into martensite and austenite with the nitrides of NbCrN by HTGN treatment. Due to the precipitation of nitrides and matrensite formation, the hardness of the surface layer showed $400Hv{\sim}530Hv$. The nitrogen concentration of the surface layer appeared as 0.05%, 0.12% and 0.92%, respectively, at $1050^{\circ}C,\;1100^{\circ}C\;and\;1150^{\circ}C$. When the nitrogen is permeated from surface to interior, Nb and Cr, which have strong affinities with nitrogen, also move from interior to surface. Therefore it is considered that this counter-current of atoms promotes the formation of NbCrN at the surface layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.189-189
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• 2011

인공관절은 노인성 질환이나 자가 면역질환, 신체적인 외상 등으로 인하여 발생하는 관절의 손상 부위를 대체하기 위해 고안된 관절의 인공 대용물이다. 인공 관절 중 인공 고관절의 경우 관절 운동을 하는 라이너(Liner)와 헤드(Head) 부분이 인공관절의 수명을 결정하게 되는데, 헤드 부분에 메탈소재와 라이너 부분에 고분자 소재를 사용하는 MOP (metal on polymer) 구조의 인공관절은 충격흡수의 장점이 있는 반면 wear debris에 의한 골용해로 인하여 관절이 느슨해지는 문제점이 발생하여 재 시술의 주요 원인이 되고 있다. 또한 메탈 헤드의 마모로 인한 금속이온의 용출은 세포 독성의 문제를 야기하여 인공관절의 수명을 낮추는 또 하나의 요인이 되고 있다. 따라서 인공관절의 수명을 늘리기 위해 DLC, ZrO, TiN 등의 높은 경도 값을 갖는 박막을 금속 헤드 위에 증착하여 상대재인 인공관절용 고분자 소재의 마모량을 줄이고자 하는 연구가 활발하게 진행 되고 있다. 본 연구에서는 PIII&D (Plasma Immersion Ion Implantation & Deposition)공정을 이용하여 Co-Cr-Mo 합금 소재 niobium nitride (NbN) 박막을 증착하여 상대제인 UHMWPE (ultra high molecular polyethylene)의 마모를 줄이고자 하는 연구를 진행하였다. 마모량을 감소시키기 위하여, 박막 증착전에 질소를 이온주입하는 pre-ion implantation 공정을 도입하였으며, 또한 Co-Cr 합금과 NbN박막 사이의 접착력을 증가시키기 위하여 박막의 증착 초기에 이온주입과 증착을 동시에 수행하는 dynamic ion mixing공정을 수행하였다. NbN 박막의 특성을 평가하기 위해 XRD, XPS, AFM 등의 분석을 수행하였으며, 상대재인 초고분자량 폴리에틸렌의 마모량을 측정하기 위해 Pin-on-disk tester를 이용하여 마모 실험을 진행하였다. 마모 실험 결과, pre-ion implantation 공정을 도입한 경우 현재 상용화 되어있는 Co-Cr 합금에 비하여 마모량을 2배 이상 감소시키는 것을 확인 할 수 있었으며, dynamic ion mixing 공정을 도입한 경우 장시간의 마모 시험에 대한 마모 특성이 향상 되는 것을 확인 할 수 있었다.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.311-317
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• 2007

This study examined the phase changes, nitride precipitation and variation in mechanical properties of STS 304, STS 321 and STS 316L austenitic stainless steels after high temperature gas nitriding (HTGN) at temperature ranges from $1050^{\circ}C\;to\;1150^{\circ}C$. Fine round type of $Cr_2N$ nitrides were observed in the surface layers of 304 and 316L steels, even more in STS 321. Additionally, square type of TiN was found in STS 321 austenitic matrix too. As a result of many precipitates in the surface layer of the STS 321, it was seen $370{\sim}470Hv$ hardness variation depending on the HTGN treatment conditions, and interior region of austenite represented 150Hv. The surface hardness value of STS 304 and STS 316L showed $255{\sim}320Hv$, respectively. The nitrogen content was shown 0.27, 1.7 and 0.4% respectively at the surface layers of the STS 304, STS 321 and STS 316L. After the HTGN it was shown the improvement of corrosion resistance of the STS 321 and STS 316L compared with solution annealed steels in the solution of 1N $H_2SO_4$ whereas the STS 304 was not.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.3-8
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• 1995

n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about $40nA/mm^{2}$. When the device was exposed by Xe lamp whose wavelength range from 400nm to 1100nm, the maximum photo responsivity was about 0.6A/W between 600 and 700nm. Variation of the characteristics of fabricated devices after 5 weeks was negligible.

• Corrosion Science and Technology
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• v.9 no.1
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• pp.20-28
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• 2010

According to the bipolar model, ion selectivity of some species in the passive film is important factor to control the passivation. An increase of cation selectivity of outer layer of the passive film can stabilize the film and improves the corrosion resistance. Therefore, the formation and roles of ionic species in the passive film should be elucidated. In this work, two types of solution (hydrochloric or sulfuric acid) were used to test high N and Mo-bearing stainless steels. The objective of this work was to investigate the formation of oxyanions in the passive film and the roles of oxyanions in passivation of stainless steel. Nitrogen exists as atomic nitrogen, nitric oxide, nitro-oxyanions (${NO_x}^-$), and N-H species, not nitride in the passive film. Because of its high mobility, the enriched atomic nitrogen can act as a reservoir. The formation of N-H species buffers the film pH and facilitates the formation of oxyanions in the film. ${NO_x}^-$ species improve the cation selectivity of the film, increasing the oxide content and film density. ${NO_x}^-$ acts similar to a strong inhibitor both in the passive film and at active sites. This facilitates the formation of chromium oxide. Also, ${NO_x}^-$ can make more molybdate and nitric oxide by reacting with Mo. The role of Mo addition on the passivation characteristics of stainless steel may differ with the test environment. Mo exists as metallic molybdenum, molybdenum oxide, and molybdate and the latter facilitates the oxide formation. When nitrogen and molybdenum coexist in stainless steel, corrosion resistance in chloride solutions is drastically increased. This synergistic effect of N and Mo in a chloride solution is mainly due to the formation of nitro-oxyanions and molybdate ion. Oxyanions can be formed by a 'solid state reaction' in the passive film, resulting in the formation of more molybdate and nitric oxide. These oxyanions improve the cation selectivity of the outer layer and form more oxide and increase the amount of chromium oxide and the ratio of $Cr_2O_3/Cr(OH)_3$ and make the film stable and dense.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.