• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.227-233
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• 1994

CuAlGeSe4 및 CuAlGeSe4 ; Co2+ 결정을 고순도의 성분원소로부터 합성하고 서냉법으로 결정을 성장시켰다. 이들결정은 chalcopyrite 결정구조를 갖고 있으며 직접전이형 energy gap 구조를 갖고 286K에서 energy gap은 CuAlGeSe4 결정의 경우는 2.394eV이며 CuAlGeSe4 ; Co2+ 결정의 경우는 2.302 eV로 주어졌다. CuAlGeSe4 : Co2+ 결정에서 cobalt에 의한 불순물 광흡수 peak들은 12243, 7002, 3890 cm-1에서 나타났으며 이 peak들은 CuAlGeSe4 : Co2+ 결정의 Td symmetry site에 위치한 Co2+ ion의 energy 준위사이의 전자전이에 의한 optical absorption임을 규명했다.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.346-354
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• 1994

삼원화합물 반도체 CuAlSe2 및 CuGaSe2 단결정의 solid solution 인 CuAl1-xGaxSe2 및 cobalt를 2.0 mol% 첨가한 CuAl1-xGaxSe2 : Co2+ 단결정을 iodine을 수송물질로 사용한 화학수송법으로 성장시켰 다. source material로는 CuAl1-xGaxSe2 의 화학조성비에서 Se를 3.0mol% 과잉으로 첨가하여 합성한 ingot를 사용하였으며 불순물이 첨가된 CuAl1-xGaxSe2:Co2+ 단결정성장시에는 source ma-terial 에 cobalt 분말을 2.0mol% 첨가하였다. X-선 회절무늬로부터 성장된 단결정들이 chalcopyrite 결정구조를 하고 있음을 확인하였으며 격자상수를 구하였다. 광흡수 spectra 측정으로부터 성장된 단결정에서 나타 는 cobalt 불순물에 의한 광흡수 peak가 Td 대칭점에위치한 Co2+ 이온의 에너지 준위들간 전자전이에 의해 나타남을 규명하였다.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.205-210
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• 2017

In this study, we examined the photo-degradation efficiency of $CoSe_2$-Graphene-$TiO_2$ ($CoSe_2-G-TiO_2$) nanocomposites under visible light irradiation using rhodamine B (RhB) as standard dye. $CoSe_2-G-TiO_2$ nanocomposites were synthesized by ultrasonication and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopic analysis and UV-Vis absorbance spectra analysis. Our results show that the $CoSe_2-G-TiO_2$ nanocomposite exhibited significant photo degradation efficiency compared to pure $TiO_2$ and $CoSe_2-G$, approximately 85.2% of the rhodamine (Rh B) degraded after 2.5 h. It is concluded that the $CoSe_2-G-TiO_2$ nanocomposite is a promising candidate for use in dye pollutants.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.313-320
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• 2019

In this study, cobalt diselenide ($CoSe_2$) and the composites ($CoSe_2@RGO$) of $CoSe_2$ and reduced graphene oxide (RGO) were synthesized by a facile hydrothermal reaction using cobalt ions and selenide source with or without graphene oxide (GO). The formation of $CoSe_2@RGO$ composites was identified by analysis with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and scanning electron microscopy (SEM). Electrochemical analyses demonstrated that the $CoSe_2@RGO$ composites have excellent catalytic activity for the reduction of $I_3{^-}$, possibly indicating a synergetic effect of $CoSe_2$ and RGO. As a consequence, the $CoSe_2@RGO$ composites were applied as a counter electrode in DSSC for the reduction of redox couple electrolyte, and exhibiting the comparable power conversion efficiency (7.01%) to the rare metal platinum (Pt) based photovoltaic device (6.77%).

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.16-21
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• 2001

Optical properties of $Ag_2CdSnSe_4$ and $Ag_2CdSnSe_4:Co^{+2}$ quaternary semiconductor single crystals grown by the chemical transport reaction method were investigated. The analysis of the X - ray powder diffraction measurements showed that these crystals have a wurtzite structure with lattice constants a = 4.357 $\AA$, c = 7.380 $\AA$, for $Ag_2CdSnSe_4$ and a = 4.885 $\AA$, c = 7.374 $\AA$, for $Ag_2CdSnSe_4:CO^{2+}$. The direct band gap at 298K, obtained from the optical absorption measurement, is found to be 1.21 eV for $Ag_2CdSnSe_4$ and 1.02 eV for $Ag_2CdSnSe_4:CO^{2+}$. The shrinkage of the band gap due to Co-doping is observed and is about 190 meV, We observed four absorption bands of $Co^{2+}$ ions in two near infrared regions of optical absorption spectra of $Ag_2CdSnSe_4$:$Co^{+2}$. These absorption bands were assigned as due to electronic transitions between the split energy levels of $Co^{2+}$ ions in $T_d$ crystal field under spin-orbit interactions.

• Proceedings of the KIEE Conference
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• 1999.11a
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• pp.10-12
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• 1999

Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$:$Co^{2+}$ crystals are investigated in the visible and near-infrared regions at 298K. The direct band gap at 298K is 1.630eV for the $Zn_2AgGaSe_4$ and 1.567eV for the $Zn_2AgGaSe_4$:$Co^{2+}$ crystals, respectively. In the optical absorption and PAS spectrum of the $Zn_2AgGaSe_4$:$Co^{2+}$, we observed five impurity absorption peaks at $4220cm^{-1}$, $5952cm^{-1}$, $12422cm^{-1}$, $12987cm^{-1}$ and $14184cm^{-1}$. These impurity absorption peaks are attributed to the electronic transitions between the split energy levels of $Co^{2+}$ ions with Td symmetry of $Zn_2AgGaSe_4$ host lattice. The crystal field parameter Dq, the Racah parameter B and the spin-orbit coupling parameter $\lambda$ are given by $442cm^{-1}$, $425cm^{-1}$ and $440cm^{-1}$, respectively.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.152-158
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• 1996

Optical absorption and photoconductivity spectra of undoped and Co-doped Cd$_{4}$GeSe$_{6}$ single crystals, grown by the chemical transport reaction using iodine as a transporting agent, were investigated. At 20K, the optical energy gaps of the single crystals are 1.934eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$. The photoconductivity spectra of these single crystals were closely investigated over the temperature range 20-290K. At 20K, the photoconductivity peaks were located at 1.797eV, 1.347eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV, I,.57eV, 1.46eV and 1.38eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$, respectively.ely.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.1-5
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• 2003

Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystals at 289k were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystal was observed and described as originating from the electron transition between energy levels of Co$^{2+}$ion sited at T$_{d}$ symmetry point.y point.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.43-48
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• 2004

Undoped and $Co^{2+}$-doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$. and $CaIn_2Se_4$ single crystals were grown by using the chemical transport reaction method The temperature dependence of the optical energy gap was well fitted by the Varshni equation. In the Co2+ - doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$, and $CaIn_2Se_4$ single crystals, two groups of impurity optical absorption peaks due to Co2+ sited in a Td symmetry were observed in the wavelength regions of 600 900 nm and 1350 1950 nm at 11 K.耀

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1599-1602
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• 2002

$Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the $Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals at 289K were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the $Zn_4SnSe_6:Co^{2+}$ single crystal was observed and described as originating from the electron transition between energy leveles of $Co^{2+}$ sited at $T_d$ symmetry point.