• Title/Summary/Keyword: $C_P$(Power Coefficient)

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Thermoelectric Properties of AlN-doped SiC Ceramics (AlN 첨가 SiC 세라믹스의 열전변환특성)

  • Pai, Chul-Hoon
    • Korean Journal of Metals and Materials
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    • v.50 no.11
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    • pp.839-845
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    • 2012
  • The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

A CMOS-based Temperature Sensor with Subthreshold Operation for Low-voltage and Low-power On-chip Thermal Monitoring

  • Na, Jun-Seok;Shin, Woosul;Kwak, Bong-Choon;Hong, Seong-Kwan;Kwon, Oh-Kyong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.29-34
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    • 2017
  • A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

A Preliminary Study for a Korean Version of the Luria-Nebraska Neuropsychological Battery-Children's Revision (아동용 Luria-Nebraska 신경심리검사의 한국 표준화를 위한 예비연구)

  • Kang, Cha Yeun
    • Korean Journal of Child Studies
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    • v.13 no.2
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    • pp.203-216
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    • 1992
  • The purpose of this study was to investigate the utility of the Luria-Nebraska Battery-Children's Revision (LNNB-CR) in the clinical situation in Korea: LNNB-CR was applied clinically in order to examine how well it differentiates brain damaged children from normals. Subjects were 30 children with the average age of 10 years. Among them 15 were diagnosed as the 'brain damaged' group, and the remaining 15 were normal. All subjects of the two groups were tested on all items in accordance with LNNB-CR manual. Data were analyzed by percentage, correlation coefficient, and t-test. The results were (1) the degree of consistency between testers averaged 97.2% which confirmed the stability of the scoring system. (2) Split-half reliability was ranged from .75 on the Tactile Scale (C3) to .95 on the Memory Scale (C10). Thus, consistency of items within the scales appeared high. (3) Internal consistency reliability ranged from .74 on the Visual Scale (C4) to .98 on the Reading Scale (C9). Thus, the homogenity of items within the scales appeared high. (4) In the diagnostic discriminative power test between the two groups, both individual scales and total scores showed significant differences at the level of p<.001. (5) The discriminative power test between two groups on all items showed significant differences at the level of p<.05 or better in 126(85%) out of 149 items. These results are supportive of the diagnostic utility of the application of LNNB-CR to the clinical situation in Korea. However, extensive additional research is needed in order to prove its worth.

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A Basic Study for Wind Energy of Building Cladding using Computational Fluid Dynamics (CFD를 이용하여 건물 외피의 바람에너지에 관한 적용연구)

  • Chung, Yung-Bea
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.39.2-39.2
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    • 2011
  • The new and renewable energy today has a great interest in all countries around the world. In special it has need more limit of the fossil fuel that needs of low carbon emission among the social necessary conditions. Recently, the high-rise building demand the structural safety, the economic feasibility and the functional design. The high-rise building spends enormous energy and it satisfied the design in solving energy requirements. The requirements of energy for the building depends on the partly form wind energy due to the cladding of the building that came from the surroundings of the high-rise building. In this study of the wind energy, the cladding of the building was assessed a tentative study. The wind energy obtains from several small wind powers that came from the building or the surrounding of the building. In making a cladding the wind energy forms with wind pressure by means of energy transformation methods. The assessment for the building cladding was surrounded of wind speed and wind pressure that was carried out as a result of numerical simulation of wind environment and wind pressure which is coefficient around the high-rise building with the computational fluid dynamics. In case of the obtained wind energy from the pressure of the building cladding was estimated by the simulation of CFD of the building. The wind energy at this case was calculated by energy transform methods: the wind pressure coefficients were obtained from the simulated model for wind environment using CFD as follow. The concept for the factor of $E_f$ was suggested in this study. $$C_p=\frac{P_{surface}}{0.5{\rho}V^{2ref}}$$ $$E_c=C_p{\cdot}E_f$$ Where $C_p$ is wind pressure coefficient from CFD, $E_f$ means energy transformation parameter from the principle of the conservation of energy and $E_c$ means energy from the building cladding. The other wind energy that is $E_p$ was assessed by wind power on the building or building surroundings. In this case the small wind power system was carried out for wind energy on the place with the building and it was simulated by computational fluid dynamics. Therefore the total wind energy in the building was calculated as the follows. $$E=E_c+E_p$$ The energy transformation, which is $E_f$ will need more research and estimation for various wind situation of the building. It is necessary for the assessment to make a comparative study about the wind tunnel test or full scale test.

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Thermal Performance Characteristics of Closed-Wet Cooling Tower (밀폐형 냉각탑의 열성능 특성에 관한 실험적 연구)

  • Sarker, M.M.A.;Kim, E.P.;Moon, C.G.;Yoon, J.I.
    • Journal of Power System Engineering
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    • v.9 no.2
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    • pp.88-92
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    • 2005
  • The experiment of thermal performance about closed-wet cooling tower was conducted in this study. A closed cooling tower is a device similar to a general cooling tower, but with cooling tower replaced by a heat exchanger. The test section for this experiment has the process that the cooling water flows from the top of the heat exchanger to the bottom side in the inner part of the tube, and spray water flows in the gravitational direction in the outer side. Air comes in direct contact with the spray water at the outer side of the tube while passing from the lower the upper part having a counterflow to the spray water. The heat transfer pipe used in this experiment is a bare-type tube having an outer diameter of 15.88mm. The heat exchanger is consisted of seven rows and fifteen columns. In this experiment, thermal performance of the cooling tower is derived from overall heat transfer coefficients between the process fluid and sprayed water and volumetric overall mass transfer coefficient between sprayed water and air.

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Prediction of Temperature Rise in Power Appratus (초고압 전력기기의 온도상승 예측)

  • Kim, S.W.;Park, J.H.;Hahn, S.C.;Lee, B.Y.;Park, K.Y.;Song, W.P.;Kim, J.B.
    • Proceedings of the KIEE Conference
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    • 2001.04a
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    • pp.113-115
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    • 2001
  • In order to design the power appratus such ac bus bar, the current carrying ampacity should be determined, Since it is limited by maxium operating temperature, it is very important to predict temperature-rise on it. The main causes to raise temperature are joule's loss in the current carrying conductor and induced circulating and eddy current in the tank. The heat transfer is divided into convection and radiation on boundary, determining convection heat transfer coefficient is not easy. This paper propose a new technique that can be used to estimate the temperature rise in the extra high voltage bus bar. The heat transfer coefficient is analytically calculated by applying Nusselt Number depending on temperature as well as model geometry. The analytic method which use heat transfer coefficient is coupled with finite element method. The temperature distribution in the bus bar by the proposed method shows good agreement with experimental data.

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A Sensorless and Versatile Temperature-Control System for MEMS Microheaters (온도센서를 사용하지 않는 MEMS 마이크로히터 온도제어시스템)

  • Bae, Byung-Hoon;Yeon, Jung-Hoon;Flachsbart Bruce R.;Shannon Mark A.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.11
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    • pp.544-547
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    • 2006
  • In this paper, we present a temperature-controlled system for MEMS electrical resistance heaters without a temperature sensor. To rapidly control the heater temperature, the microheater system developed consists of a power supply, power amplifier, digital ${\underline{P}}roportional-{\underline{I}}ntegral-{\underline{D}}ifferential$ (PID) controller, and a quarter bridge circuit with the microheater and three resistors are nominally balanced. The microheaters are calibrated inside a convection oven to obtain the temperature coefficient with a linear or quadratic fit. A voltage amplifier applies the supply voltage proportional to the control signal from the PID controller. Small changes in heater resistance generate a finite voltage across the quarter bridge circuit, which is fed back to the PID controller to compare with the set-point and to generate the control signal. Two MEMS microheaters are used for evaluating the developed control system - a NiCr serpentine microheater for a preconcentrator and a Nickel microheater for ${\underline{P}}olymerase\;{\underline{C}}hain\;{\underline{R}}eaction$ (PCR) chip.

Study on Optimal Design of Wind Turbine Blade Airfoil and Its Application (풍력발전기 블레이드의 에어포일 최적 설계 및 그 적용 연구)

  • Sun, Min-Young;Kim, Dong-Yong;Lim, Jae-Kyoo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.5
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    • pp.465-475
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    • 2012
  • This study was carried out with two goals. One was the development of a model of a wind turbine blade airfoil and the other was the application of this folding blade. In general, in large-sized (MW) wind turbines, damage is prevented because of the use of a pitch control system. On the other hand, pitch control is not performed in small wind turbines since equipment costs and maintenance costs are high, and therefore, the blade will cause serious damage. The wind turbine proposed in this study does not require maintenance, and the blades do not break during high winds because they are folded in accordance with changes in the wind speed. But generators are not cut-out, while maintaining a constant angle will continue to produce. The focus of this study, the wind turbine is continued by folding blade system in strong winds and gusts without stopping production.

Thermolelectric Properties of p-type $Sb_{2-x}Bi_xTe_3$ grown by MOCVD (MOCVD법으로 성장된 p-형 $Sb_{2-x}Bi_xTe_3$ 박막의 열전특성)

  • Kim, Jeong-Hoon;Kwon, Sung-Do;Jung, Yong-Chul;Yoon, Seok-Jin;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.138-139
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    • 2006
  • Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

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Characterization and Comparison of Doping Concentration in Field Ring Area for Commercial Vertical MOSFET on 8" Si Wafer (8인치 Si Power MOSFET Field Ring 영역의 도핑농도 변화에 따른 전기적 특성 비교에 관한 연구)

  • Kim, Gwon Je;Kang, Ye Hwan;Kwon, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.4
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    • pp.271-274
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    • 2013
  • Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.