• 제목/요약/키워드: $C_4F_8$

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고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 광학적 및 전기적 특성 (Optical and Electrical Characteristics of Fluorocarbon Films Deposited in a High-Density C4F8 Plasma)

  • 권혁규;유상현;김준현;김창구
    • Korean Chemical Engineering Research
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    • 제59권2호
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    • pp.254-259
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    • 2021
  • 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 광학적 및 전기적 특성을 소스파워와 압력을 변화하며 분석하였다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율은 2단계 증착 메커니즘의 작용으로 소스파워가 증가할수록 증가하였고 압력이 증가할수록 감소하였다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율 변화는 불화탄소막의 광학적 및 전기적 특성 변화에 직접적으로 영향을 끼쳤다. 즉, 불화탄소막의 굴절률은 F/C 비율 변화 양상과는 달리 소스파워가 증가할수록 감소하였고 압력이 증가할수록 증가하였는데 이는 F/C 비율이 증가할수록 전자분극작용이 억제되고 불화탄소막의 망상조직이 약화되어 굴절률이 감소하기 때문이었다. 불화탄소막의 비저항은 F/C 비율 변화와 같이 소스파워가 증가할수록 증가하였고 압력이 증가할수록 감소하였는데 이는 F/C 비율이 증가할수록 주변 전자들을 반발하려는 경향이 강해져서 비저항이 증가하기 때문이었다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율 조절로 불화탄소막의 광학적 및 전기적 특성을 직접적으로 변화할 수 있으므로 불화탄소막이 반도체소자제조공정에서 저 유전상수 물질 대체용으로 가능할 수 있음이 예상된다.

Study of Surface Reaction and Gas Phase Chemistries in High Density C4F8/O2/Ar and C4F8/O2/Ar/CH2F2 Plasma for Contact Hole Etching

  • Kim, Gwan-Ha
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.90-94
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    • 2015
  • In this study, the characterizations of oxide contact hole etching are investigated with C4F8/O2/Ar and CH2F2/C4F8/O2/ Ar plasma. As the percent composition of C4F8 in a C4F8/O2/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the CxFy polymer layer retards the reaction of oxygen atoms with PR. Adding CH2F2 into the C4F8/O2/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C4F8/(C4F8+O2) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

PFOS 대체물질의 환경유해성에 관한 연구 (Study on Environmental Hazards of Alternatives for PFOS)

  • 최봉인;정선용;나숙현;신동수;유병택
    • 대한환경공학회지
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    • 제38권6호
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    • pp.317-322
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    • 2016
  • PFOS sodium salt ($C_8F_{17}SO_3Na$)는 28일 동안 미생물에 의한 분해가 이루어지지 않은 반면 4종의 대체물질($C_{25}F_{17}H_{32}S_3O_{13}Na_3$, $C_{15}F_9H_{21}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$, $C_{17}F_9H_{25}S_2O_8Na_2$)은 각각 21.6%, 20.5%, 15.8% 그리고 6.4% 분해가 이루어졌다. Daphnia magna를 이용하여 48시간 동안 수행한 물벼룩급성독성시험에서 sodium salt ($C_8F_{17}SO_3Na$)의 반수영향농도($EC_{50}$)는 54.5 mg/L 인 것으로 확인된 반면 4종의 대체물질은 500.0 mg/L에서 아무런 영향이 나타나지 않았다. 500.0 mg/L에서 PFOS sodium salt($C_8F_{17}SO_3Na$)의 표면장력은 46.2 mN/m이었으며 대체물질 4종의 표면장력은 모두 PFOS sodium salt 보다 우수한 것으로 확인되었다. $C_{23}F_{18}H_{28}S_2O_8Na_2$ (20.9 mN/m)는 가장 낮은 표면장력을 갖고 있었다. 그 다음은 $C_{15}F_9H_{21}S_2O_8Na_2$ (23.4 mN/m), $C_{17}F_9H_{25}S_2O_8Na_2$ (27.3 mN/m) 그리고 $C_{25}F_{17}H_{32}S_3O_{13}Na_3$ (28.2 mN/m) 순인 것으로 확인되었다. 미생물분해시험, 물벼룩급성독성시험 그리고 표면장력측정 결과를 종합해 보면 4종의 PFOS 대체물질($C_{25}F_{17}H_{32}S_3O_{13}Na_3$, $C_{15}F_9H_{21}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$, $C_{17}F_9H_{25}S_2O_8Na_2$)은 모두 PFOS sodium salt ($C_8F_{17}SO_3Na$) 보다 우수한 것으로 확인되었으며 특히 3종의 대체물질($C_{15}F_9H_{21}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$, $C_{25}F_{17}H_{32}S_3O_{13}Na_3$)은 미생물분해율이 15.8~21.6%로 상대적으로 높고, 물벼룩급성독성과 표면장력측정이 PFOS sodium salt 보다 상당히 우수하다. 그러므로 이들 4종의 대체물질은 PFOS 대체물질로 활용이 가능할 것으로 판단된다.

C$_4$F$_8$/H$_2$ helicon were 플라즈마를 이용한 contact 산화막 식각 공정시 과식화된 실리콘 표면의 잔류막과 손상층 형성 및 이의 제거에 관항 연구 (A study on the formation and removal of residue and damaged layer on the overched silicon surface during the contact oxide etching using $C_4$F$_8$/H$_2$ helicon were plasmas)

  • 김현수;이원정;백종태;염근영
    • 한국표면공학회지
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    • 제31권2호
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    • pp.117-126
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    • 1998
  • In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

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Global Warming Gas Emission during Plasma Cleaning Process of Silicon Nitride Using C-C$_4$F$_8$O Feed Gas with Additive $N_2$

  • Kim, K.J.;Oh, C.H.;Lee, N.-E.;Kim, J.H.;Bae, J.W.;Yeom, G.Y.;Yoon, S.S.
    • 한국표면공학회지
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    • 제34권5호
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    • pp.403-408
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    • 2001
  • In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

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Density Functional Theory Calculations for Chemical Reaction Mechanisms of C4F8

  • 최희철;송미영;윤정식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.133-133
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    • 2015
  • Recently, it has been shown that the ${\omega}B97X-D/aVTZ$ method is strongly recommended as the best practical density functional theory(DFT) for rigorous and extensive studies of saturated or unsaturated $C_4F_8$ species because of its high performance and reliability especially for van der Waals interactions. All the feasible isomerization and dissociation paths of $C_4F_8$ molecules were investigated at this theoretical level and rate constants of their chemical reactions were computed by using variational transition-state theory for a deep insight into $C_4F_8$ reaction mechanisms. Fates and roles of C4F8 molecules and their fragments in plasma phases could be clearly explained based on our computational results.

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의복 디자인 선에 따른 시각적 효과에 관한 연구 (A Study on the Visual Effects According to the Lines in Cloth Designing)

  • 이경희
    • 대한가정학회지
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    • 제28권4호
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    • pp.1.1-13
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    • 1990
  • Authors have performed the sensory evaluation tests according to each given items after selecting various lines in order to assess the visual effects by the lines in cloth designing. The evaluations were done by means of ranking tests followed by paired comparison tests. The results obtained were as follows : 1. In the item in than "Shoulder width looks wide", the design C3 showed the best visual effect, and then B1, F8, and A5 comes in order. In "Shoulder width looks narrow", they were A2, F5, F7, and B2 in order. 2. In "Bust looks big", the effect was best in F9, and then B1, F5, C3, and A5 and order. "Bust looks small" item showed A3, C1, and F1 in order. 3. In "Waist looks thick", they were B2, D1, and F7 while in "Waist looks thin", they were B3, F8, and D6 in order. 4. In the item in that "Hip looks big", the best effect was in F9, and then E3, C2, and B4 in order. In "Hip looks small", the best one was C1, and then comes. E1, F6, and F8. 5. In "Upper body looks thick", they were D2, D4, F8, C3 and A5 in order whild in "Upper body looks thin", they were A1, F5, and D7 in order. 6. In the item "Lower body lookds thick", they were F9, C2, E3, B3, and D3 in order. In "Lower body looks thin", the best one was C1, and then D1, E2, F6, and F8 comes in order. 7. In "whole body looks thick", they were F9, F3, D3, and A5, and in "Whole body looks thin", they were F5, A1, C1, and D6 in order. 8. In "Height looks tall", the effects were in order of A4, D6, E1, and F7 while in "Height looks short", they were E3, F9, B4, D2, and D1. 8. In "Height looks tall", the effects were in order of A4, D6, E1, and F7 while in "Height looks short", they were E3, F9, B4, D2, and D1. F9, B4, D2, and D1.

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Density Functional Theory (DFT) Calculations for the Geometry, Energy, and Chemical Reaction Properties of $C_4F_8$

  • 최희철;박영춘;이윤섭
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.193-193
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    • 2013
  • Perfluorocarbons (PFCs) have been suggested as possible replacements for $SF_6$ and the fluorocarbons used in and emitted during technological plasma treatments because PFCs have significantly low greenhouse warming potentials. Of many PFCs, c-$C_4F_8$ and 2-$C_4F_8$ attract special attention because of their high CF2 radicallevels in commercial plasma treatments. Accordingly, several experimental and theoretical studies of these $C_4F_8$ species have been conducted, although only the geometries at their stationary states and their adiabatic electron affinities (EAs) have been determined. However, this information is not sufficient for a deep understanding of all the possible fates and roles of $C_4F_8$ species and their fragments in plasma phases. Although the performance and reliability ofeach DFT functional have been examined carefully by the development team of each functional form with respect to the training and test data sets of well-known molecular systems, no PFC was included in the data sets. So a careful additional assessment of the reliability of DFT functionals for the study of PFC systems is highly required. In order to find a DFT method appropriate to PFCs, the geometry, energy, and chemical reaction properties of $C_4F_8$ were calculated and compared with reference data.

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Fusarium속의 염색체 분석 (Chromosomal Studies on the Genus Fusarium)

  • 민병례
    • 미생물학회지
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    • 제27권4호
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    • pp.342-347
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    • 1989
  • Fusarium 속의 20균주를 PDA 배지에서 배양하고. HCI-Giemsa 염색법을 이용하여 균사 내에서의 영양핵의 핵분열을 관찰하였고, 염색체 수를 세었다. 관찰한 모든 Fusarium 속의 균주들익 염색체 수는 4-8개 사이에 있었다. 그 중에서 3균주인 F. solari S Hongchun D4. F. moniiforme(from banana), F. raphani (from radish)는 n=8개이고, F, solani 7468(from Sydney), F, solani 7475 (from Sydney), F, oxyporum (from tomato), F, oxyporum(from tomato). F F. roseum(from rice), F, sporotrichioides C. Jungsun 1, F. avenaceum C Kosung 6. F, avenaceum46039 등의 7균주에서는 n=7개였다 F. monilzfonne (from rice), F. graminellrum, F. probiferatum 6787(from Sydney), F. anguioides ATCC20351의 5균주는 n=6개 F. moniliforme NRRL2284. F. poae NRRL3287. F. tricintum NRRL 3299의 3균주는 n=5개였고 가장 적은 수의 n=4개인 균주로는 F. sporotrichioides NRRL3510과 F. equiscli KFCC 11843 IFO 030198의 3균주였다. 이상의 균주들의 염색체 수를 비교 고찰할 때 Fusarium 속의 기본 염색체 수는 반수체가 4개이며 종 분화과정에서 이수체와 배수체가 되었을 것으로 추론된다.

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CuO ${B_2}{O_3}$첨가에 따른 $PbWO_4$-$TiO_2$세라믹스의 마이크로파 유전특성 (Effects of CuO and ${B_2}{O_3}$Additions on Microwave Dielectric Properties of $PbWO_4$-$TiO_2$Ceramic)

  • 최병훈;이경호
    • 한국세라믹학회지
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    • 제38권11호
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    • pp.1046-1054
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    • 2001
  • 적층일체형 RF 수동소자 모듈 구현을 위한 저온소결 유전체로의 사용을 위해 B$_2$O$_3$ 및 CuO의 첨가가 PbWO$_4$-TiO$_2$계 세라믹의 고주파 유전특성에 미치는 영향을 조사하였다. 본 연구자는 PbWO$_4$가 8$50^{\circ}C$에서 소결이 가능하고 우수한 유전특성($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz, $ au$$_{f}$ =-31 ppm/$^{\circ}C$)을 보여 LTCC 재료로의 응용가능성이 있다고 판단하였다. 이에 PbWO$_4$$\tau$$_{f}$ 조절을 위해 TiO$_2$를 첨가하여 8$50^{\circ}C$에서 소결한 결과 TiO$_2$의 함량이 8.7 mol%일 때 $\tau$$_{f}$ 를 +0.2ppm/$^{\circ}C$로 조절할 수 있었고, 이때 $\varepsilon$$_{r}$ 및 Q$\times$f$_{0}$ 값은 각각 22.3과 21400GHz이었다. TiO$_2$첨가량 증가에 따른 Q$\times$F$_{0}$ 값의 감소는 결정립 크기 감소에 의한 것이었다. Q$\times$f$_{0}$ 값의 개선을 위해 다양한 량의 CuO 및 B$_2$O$_3$를 첨가한 결과, 최적의 유전특성을 얻기 위해서는 적정량의 첨가량이 필요함을 알 수 있었다. CuO 첨가의 경우 유전특성 개선을 위한 최적의 첨가량은 0.05 wt%이었고 이 조성을 8$50^{\circ}C$에서 소결한 결과, 얻어진 유전특성은 $\varepsilon$$_{r}$=23.5, Q$\times$f$_{0}$=32900 GHz, $\tau$$_{f}$ =-2.2 ppm/$^{\circ}C$이었다. B$_2$O$_3$첨가의 경우 최적의 첨가량은 1.0~2.5 wt%이었으며 8$50^{\circ}C$에서 소결한 경우 얻어진 유전특성은 $\varepsilon$$_{r}$20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$이었다.

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