• Title/Summary/Keyword: $C_4F_8$

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Optical and Electrical Characteristics of Fluorocarbon Films Deposited in a High-Density C4F8 Plasma (고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 광학적 및 전기적 특성)

  • Kwon, Hyeokkyu;You, Sanghyun;Kim, Jun-Hyun;Kim, Chang-Koo
    • Korean Chemical Engineering Research
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    • v.59 no.2
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    • pp.254-259
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    • 2021
  • Optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma under various source powers and pressures were investigated. The F/C ratio of the fluorocarbon film deposited in a high-density C4F8 plasma increased with increasing source power and decreasing pressure due to two-step deposition mechanism. The change in the F/C ratio of the film directly affected the optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma. The refractive index of the fluorocarbon film increased with decreasing source power and increasing pressure contrary to the dependence of the film's F/C ratio on the source power and pressure. This was because the increase in the F/C ratio suppressed electronic polarization and weakened the network structures of the film. The resistivity of the fluorocarbon film showed the same behavior as its F/C ratio. In other words, the resistivity increased with increasing source power and decreasing pressure, resulting from stronger repellence of electrons at higher F/C ratios. This work offers the feasibility of the use of the fluorocarbon films deposited in a high-density C4F8 plasma as an alternative to low dielectric constant materials because the optical and electrical properties of the fluorocarbon film can be directly controlled by its F/C ratio.

Study of Surface Reaction and Gas Phase Chemistries in High Density C4F8/O2/Ar and C4F8/O2/Ar/CH2F2 Plasma for Contact Hole Etching

  • Kim, Gwan-Ha
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.2
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    • pp.90-94
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    • 2015
  • In this study, the characterizations of oxide contact hole etching are investigated with C4F8/O2/Ar and CH2F2/C4F8/O2/ Ar plasma. As the percent composition of C4F8 in a C4F8/O2/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the CxFy polymer layer retards the reaction of oxygen atoms with PR. Adding CH2F2 into the C4F8/O2/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C4F8/(C4F8+O2) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

Study on Environmental Hazards of Alternatives for PFOS (PFOS 대체물질의 환경유해성에 관한 연구)

  • Choi, Bong-In;Chung, Seon-Yong;Na, Suk-Hyun;Shin, Dong-Soo;Ryu, Byung-Taek
    • Journal of Korean Society of Environmental Engineers
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    • v.38 no.6
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    • pp.317-322
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    • 2016
  • While PFOS sodium salt ($C_8F_{17}SO_3Na$) was not degraded by microorganisms for 28 days, the 4 alternatives were biodegraded at the rates of 21.6% for $C_{25}F_{17}H_{32}S_3O_{13}Na_3$, 20.5% for $C_{15}F_9H_{21}S_2O_8Na_2$, 15.8% for $C_{23}F_{18}H_{28}S_2O_8Na_2$ and 6.4% for $C_{17}F_9H_{25}S_2O_8Na_2$, respectively. The acute toxicity test using Daphnia magna was conducted for 48 hours, the half effective concentration ($EC_{50}$) of PFOS sodium salt ($C_8F_{17}SO_3Na$) was evaluated in 54.5 mg/L. While the 4 alternatives did not show any effect at 500.0 mg/L. The surface tension of the PFOS salt ($C_8F_{17}SO_3Na$) is 46.2 mN/m at a concentration of 500.0 mg/L. While the surface tension of the 4 alternatives was found to be superior to PFOS sodium salt ($C_8F_{17}SO_3Na$). The surface tension of $C_{23}F_{18}H_{28}S_2O_8Na_2$ (20.9 mN/m) has the lowest, followed by $C_{15}F_9H_{21}S_2O_8Na_2$ (23.4 mN/m), $C_{17}F_9H_{25}S_2O_8Na_2$ (27.3 mN/m), $C_{25}F_{17}H_{32}S_3O_{13}Na_3$ (28.2 mN/m). The four kinds of alternatives ($C_{15}F_9H_{21}S_2O_8Na_2$, $C_{17}F_9H_{25}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$, $C_{25}F_{17}H_{32}S_3O_{13}Na_3$) were found to be superior to PFOS sodium salt ($C_8F_{17}SO_3Na$) in terms of biodegradation, Daphnia sp. acute toxicity and surface tension, and thus they were considered applicable as PFOS alternatives. Especially biodegradation rate of $C_{15}F_9H_{21}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$ and $C_{25}F_{17}H_{32}S_3O_{13}Na_3$ was relatively high as 15.8~21.6%, and Daphnia sp. acute toxicity and surface tension were considerably superior (surface tension 39~55%) to PFOS sodium salt. Therefore, these alternatives are considered to be available as an alternative of PFOS.

A study on the formation and removal of residue and damaged layer on the overched silicon surface during the contact oxide etching using $C_4$F$_8$/H$_2$ helicon were plasmas (C$_4$F$_8$/H$_2$ helicon were 플라즈마를 이용한 contact 산화막 식각 공정시 과식화된 실리콘 표면의 잔류막과 손상층 형성 및 이의 제거에 관항 연구)

  • 김현수;이원정;백종태;염근영
    • Journal of the Korean institute of surface engineering
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    • v.31 no.2
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    • pp.117-126
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    • 1998
  • In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

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Global Warming Gas Emission during Plasma Cleaning Process of Silicon Nitride Using C-C$_4$F$_8$O Feed Gas with Additive $N_2$

  • Kim, K.J.;Oh, C.H.;Lee, N.-E.;Kim, J.H.;Bae, J.W.;Yeom, G.Y.;Yoon, S.S.
    • Journal of the Korean institute of surface engineering
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    • v.34 no.5
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    • pp.403-408
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    • 2001
  • In this work, the cyclic perfluorinated ether (c-C$_4$F$_{8}$O) with very high destructive removal efficiency (DRE) than other alternative gases, such as $C_3$F$_{8}$, c-C$_4$F$_{8}$ and NF$_3$ was used as an alternative process chemical. The plasma cleaning of silicon nitride using gas mixtures of c-C$_4$F$_{8}$O/O$_2$ and c-C$_4$F$_{8}$O/O$_2$+ $N_2$ was investigated in order to evaluate the effects of adding $N_2$ to c-C$_4$F$_{8}$O/O$_2$ on the global warming effects. Under optimum condition, the emitted net perfluorocompounds (PFCs) during cleaning of silicon nitride were quantified and then the effects of additive $N_2$ by obtaining the destructive removal efficiency (DRE) and the million metric tons of carbon equivalent (MMT-CE) were calculated. DRE and MMTCE were obtained by evaluating the volumetric emission using. Fourier transform-infrared spectroscopy (FT-IR). During the cleaning using c-C$_4$F$_{8}$O/O$_2$+$N_2$, DRE values as high as (equation omitted) 98% were obtained and MMTCE values were reduced by as high as 70% compared to the case of $C_2$F$_{6}$O$_2$. Recombination characteristics were indirectly investigated by combining the measurements of species in the chamber using optical emission spectroscopy (OES), before and after the cleaning, in order to understand any correlation between plasma and emission characteristics as well as cleaning rate of silicon nitride.silicon nitride.

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Density Functional Theory Calculations for Chemical Reaction Mechanisms of C4F8

  • Choe, Hui-Cheol;Song, Mi-Yeong;Yun, Jeong-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.133-133
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    • 2015
  • Recently, it has been shown that the ${\omega}B97X-D/aVTZ$ method is strongly recommended as the best practical density functional theory(DFT) for rigorous and extensive studies of saturated or unsaturated $C_4F_8$ species because of its high performance and reliability especially for van der Waals interactions. All the feasible isomerization and dissociation paths of $C_4F_8$ molecules were investigated at this theoretical level and rate constants of their chemical reactions were computed by using variational transition-state theory for a deep insight into $C_4F_8$ reaction mechanisms. Fates and roles of C4F8 molecules and their fragments in plasma phases could be clearly explained based on our computational results.

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A Study on the Visual Effects According to the Lines in Cloth Designing (의복 디자인 선에 따른 시각적 효과에 관한 연구)

  • 이경희
    • Journal of the Korean Home Economics Association
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    • v.28 no.4
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    • pp.1.1-13
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    • 1990
  • Authors have performed the sensory evaluation tests according to each given items after selecting various lines in order to assess the visual effects by the lines in cloth designing. The evaluations were done by means of ranking tests followed by paired comparison tests. The results obtained were as follows : 1. In the item in than "Shoulder width looks wide", the design C3 showed the best visual effect, and then B1, F8, and A5 comes in order. In "Shoulder width looks narrow", they were A2, F5, F7, and B2 in order. 2. In "Bust looks big", the effect was best in F9, and then B1, F5, C3, and A5 and order. "Bust looks small" item showed A3, C1, and F1 in order. 3. In "Waist looks thick", they were B2, D1, and F7 while in "Waist looks thin", they were B3, F8, and D6 in order. 4. In the item in that "Hip looks big", the best effect was in F9, and then E3, C2, and B4 in order. In "Hip looks small", the best one was C1, and then comes. E1, F6, and F8. 5. In "Upper body looks thick", they were D2, D4, F8, C3 and A5 in order whild in "Upper body looks thin", they were A1, F5, and D7 in order. 6. In the item "Lower body lookds thick", they were F9, C2, E3, B3, and D3 in order. In "Lower body looks thin", the best one was C1, and then D1, E2, F6, and F8 comes in order. 7. In "whole body looks thick", they were F9, F3, D3, and A5, and in "Whole body looks thin", they were F5, A1, C1, and D6 in order. 8. In "Height looks tall", the effects were in order of A4, D6, E1, and F7 while in "Height looks short", they were E3, F9, B4, D2, and D1. 8. In "Height looks tall", the effects were in order of A4, D6, E1, and F7 while in "Height looks short", they were E3, F9, B4, D2, and D1. F9, B4, D2, and D1.

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Density Functional Theory (DFT) Calculations for the Geometry, Energy, and Chemical Reaction Properties of $C_4F_8$

  • Choe, Hui-Cheol;Park, Yeong-Chun;Lee, Yun-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.193-193
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    • 2013
  • Perfluorocarbons (PFCs) have been suggested as possible replacements for $SF_6$ and the fluorocarbons used in and emitted during technological plasma treatments because PFCs have significantly low greenhouse warming potentials. Of many PFCs, c-$C_4F_8$ and 2-$C_4F_8$ attract special attention because of their high CF2 radicallevels in commercial plasma treatments. Accordingly, several experimental and theoretical studies of these $C_4F_8$ species have been conducted, although only the geometries at their stationary states and their adiabatic electron affinities (EAs) have been determined. However, this information is not sufficient for a deep understanding of all the possible fates and roles of $C_4F_8$ species and their fragments in plasma phases. Although the performance and reliability ofeach DFT functional have been examined carefully by the development team of each functional form with respect to the training and test data sets of well-known molecular systems, no PFC was included in the data sets. So a careful additional assessment of the reliability of DFT functionals for the study of PFC systems is highly required. In order to find a DFT method appropriate to PFCs, the geometry, energy, and chemical reaction properties of $C_4F_8$ were calculated and compared with reference data.

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Chromosomal Studies on the Genus Fusarium (Fusarium속의 염색체 분석)

  • 민병례
    • Korean Journal of Microbiology
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    • v.27 no.4
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    • pp.342-347
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    • 1989
  • by use of HCl-Giemsa technique and light microscope, dividing vegetative nuclei in hyphae of Fusarium species were observed and the results are summerized. The chromosome number of these fungi was ranged 4 to 8. Of the 20 strains, the highest haploid chromosome number is 8 in F. solani S Hongchun K4, F. moniliforme (from banana) and F. raphani (from radish). The lowest is 4 in F. sporotrichioides NRRL 3510 and F. equiseti KFCC 11843 IFO 30198. F. solani 7468 (from Sydney), F. solani 7475 (from Sydney), F. oxysporum(from tomato). F. roseum (from rice), F. sporotrichioides C Jngsun 1, F. equiseti C Kosung 1 and F. avenaceum 46039 are n=7. F. moniliforme (from rice) F. graminearum, F. proliferatum 6787 (from Syndey), F. proliferatum 7459 (from Synder) and F. anguioides ATCC 20351 are n=6. F. moniliforme NRRL 2284, F. poae NRRL 3287 and F. trincinctum NRRL 3299 are n=5. From these results, it may be concluded that the basic haploid chromosome number of the genus Fusarium is 4 and mat have been evolutionary variation of chromosome number through aneuploidy and polyploidy.

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Effects of CuO and ${B_2}{O_3}$Additions on Microwave Dielectric Properties of $PbWO_4$-$TiO_2$Ceramic (CuO ${B_2}{O_3}$첨가에 따른 $PbWO_4$-$TiO_2$세라믹스의 마이크로파 유전특성)

  • 최병훈;이경호
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.1046-1054
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    • 2001
  • Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

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