• Fire Science and Engineering
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• v.22 no.3
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• pp.188-193
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• 2008

Numerical simulation was carried out for a propane fire of mass transfer rate 3g/m^2-s$ on a 1m high vertical wall. The objectives of this study are to confirm the outcomes of evaluation of the simulator through simulation of natural convection, and to compare the results of the wall fire with those of previous studies. It was confirmed that the simulated boundary layer was laminar at C_s=0.2$ while it was turbulent at C_s=0.1$. The z direction velocity showed lack of turbulent mixing as seen in the natural convection case, and the profiles of temperature and velocities were in relatively good agreement with those of experiment and previous simulation. It was found that the air entrainment into the boundary layer was well predicted.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.245-250
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• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.288-297
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• 1994

In this study, lattice parameter, binding energy and microstructures of TiC layer according to the addition of Fe, Cr were investigated in the reactive deposition coating. From the results, the lattice parameters of the TiC layers by using ferro-titanium as a precursor were 4.329~4.339A but the lattice parameters of the TiC layers formed by ferro-titanium and ferro-chromium decreased to 4.316~4.330A. The hardness of the former's was HV(100g) 3,000~3,400kg/mm and the hardness of the latter's was HV (100g) 3,800~3,900. But, regardless of Cr and Fe, the binding energy of TiC layers were 454.75 eV for $Ti2p_{3/2}$ and were 281.85 eV for Cls. Meanwhile, the TiC layers were densified by addition of Fe, Cr and internal defects were reduced Therefore. it can be concluded that the remarkable hardness increment was obtained by the improvement of microstructures of TiC rather than the increase of bond strength or Peierls stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.575-579
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• 2012

Heteroepitaxial InP films have been grown on GaAs substrates to study the effects of the nucleation layer's surface roughness on the epitaxial layer's quality. For this, InP nucleation layers were grown at $400^{\circ}C$ with various ethyldimethylindium (EDMIn) flow rates and durations of growth, annealed at $6200^{\circ}C$ for 10 minutes and then InP epitaxial layers were grown at $550^{\circ}C$. It has been found that the nucleation layer's surface roughness is a critical factor on the epitaxial layer's quality. When a nucleation layer is grown with an EDMIn flow rate of 2.3 ${\mu}mole/min$ for 12 minutes, the surface roughness of the nucleation layer is minimum and the successively grown epitaxial layer's qualities are comparable to those of the homoepitaxial InP layers reported. The minimum full width at half maximum of InP (200) x-ray diffraction peak and that of near-band-edge peak from a 4.4 K photoluminescence are 60 arcmin and 6.33 meV, respectively.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.5-7
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• 2016

We present an experimental investigation of the superconducting transition temperatures, $T_c$, of superconductor/ferromagnet bilayers with varying the thickness of ferromagnetic layer. FeN was used for the ferromagnetic (F) layer, and NbN and Nb were used for the superconducting (S) layer. The results were obtained using three different-thickness series of the S layer of the S/F bilayers: NbN/FeN with NbN thickness, $d_{NbN}{\approx}9.3nm$ and $d_{NbN}{\approx}10nm$, and Nb/FeN with Nb thickness $d_{Nb}{\approx}15nm$. $T_c$ drops sharply with increasing thickness of the ferromagnetic layer, $d_{FeN}$, before maximal suppression of superconductivity at $d_{FeN}{\approx}6.3nm$ for $d_{NbN}{\approx}10nm$ and at $d_{FeN}{\approx}2.5nm$ for $d_{Nb}{\approx}15nm$, respectively. After shallow minimum of $T_c$, a weak $T_c$ oscillation was observed in NbN/FeN bilayers, but it was hardly observable in Nb/FeN bilayers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.19-25
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• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• Resources Recycling
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• v.13 no.1
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• pp.47-53
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• 2004

As a basic study of the re-using molten converter slag as an ordinary portland cement by conversion process, molten slag and sintered CaO pellet was reacted each other. The dissolution rate of the sintered CaO pellet into the molten slag was measured and the changes of the reaction layer was also investigated. The converter slag reagent-grade $SiO_2$ added was melted and hold for 30 minutes in MgO crucible between $1350∼1500 ^{\circ}C$. Then sintered CaO pellet heated at the same temperature was dipped into the molten slag and hold for 10∼30 min. After the reaction, the crucible was cooled in air and the specimen was cut off to the horizontal direction of the crucible. The dissolution rate of CaO pellet was measured by the change of the radius of sintered CaO pellet and the interface layer was observed by SEM/EDX and XRD. The dissolution rate of sintered CaO pellet contacted with the slag of basicity 1 was 9.8 $\mu\textrm{m}$/min at $1350^{\circ}C$ and increased to 18.0 $\mu\textrm{m}$/min at $1500^{\circ}C$. The rate was slightly decreased to 7.6 $\mu\textrm{m}$/min at $1350^{\circ}C$ and 15.0 $\mu\textrm{m}$/min at $V^{\circ}C$ in the slag of basicity 2. The dissolution rate of CaO in converter slag was followed to the rule of Arrhenius' temperature dependency, and the apparent activation energy of the dissolution of CaO was 36 kcal/mole. In case of the slag basicity of 1, the thickness of $C_2$S layer was 64-118 $\mu\textrm{m}$ and the thickness of $C_3$S was 28∼90 $\mu\textrm{m}$ for 10∼30 minutes at $1500^{\circ}C$. And the thickness of the $C_3$S layer was 90∼120 $\mu\textrm{m}$ at the same conditions in the slag basicity of 2.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.51-58
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• 1998

ZnS and TB-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (AKE) and characterized using materials and surface analysis techniques. $ZnCl_2$, $H_2$S,and tris(2,26,6-tetramethyl-3,5-heptandionato) terbium ($Tb(TMHD)_3$) were used as the precursors in the growth of ZnS:Tb films. The dependence of Cl content in ZnS films on growth temperature was investigated using Rutherford backscattering spectrometry. The Cl content decreased from approximately 9 at.% to 1 at. % as increasing the growth temperature from 400 to $500^{\circ}C$. The segregation of Cl in near surface region was also observed by depth profiling using Auger electron spectroscopy. Scanning electron microscopic studies showed that the ALE-grown ZnS and ZnS:Tb film during ALE process using $Tb(TMHD)_3$was also investigated. Approximately 1 at.% of O in ZnS:Tb(0.5 at.%) film which showed a good crystallinity of hexagonal 2H structure.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.27-32
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• 2011

In this study, we have investigated the power conversion efficiency of organic solar cells utilizing conjugated polymer/fullerene bulk-hetero junction(BHJ) device structures. We have fabricated poly(3-hexylthiophene)(P3HT), poly[2methoxy-5-(3',7'-dimethyloctyl-oxy)-1-4-phenylenevinylene] as an electron donor, [6,6]-phenyl $C_{61}$ butyric acid methylester(PCBM-$C_{61}$)as an electron acceptor, and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS) used as a hole injection layer(HIL), after fabricated active layer, between active layer and metal cathode(Al) deposited LiF interlayer(5 nm). The properties of fabricated organic solar cell(OSC) devices have been analyzed as a function of different thickness. The electrical characteristics of the fabricated devices were investigated by means J-V, fill factor(FF) and power conversion efficiency(PCE). We observed the highest PCEs of 0.628%(MDMO-PPV:PCBM-$C_{61}$) and 2.3%(P3HT:PCBM-$C_{61}$) with LiF inter-layer at the highest thick active layer, which is 1.3times better than the device without LiF inter-layer.