• 센서학회지
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• 제22권3호
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• pp.197-201
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• 2013

This paper describes the fabrication and characterization of graphene based carbon dioxide ($CO_2$) gas sensors. Graphene was synthesized by thermal decomposition of SiC. The resistivity $CO_2$ gas sensors were fabricated by pure graphene and graphene decorated Au nanoparticles (NPs). The Au NPs with size of 10 nm were decorated on graphene. Au electrode deposited on the graphene showed Ohmic contact and the sensors resistance changed following to various $CO_2$ concentrations. Resulting in resistance sensor using pure graphene can detect minimum of 100 ppm $CO_2$ concentration at $50^{\circ}C$, whereas Au/graphene can detect minimum 2 ppm $CO_2$ concentration at same at $50^{\circ}C$. Moreover, Au NPs catalyst improved the sensitivity of the graphene based $CO_2$ sensors. The responses of pure graphene and Au/graphene are 0.04% and 0.24%, respectively, at $50^{\circ}C$ with 500 ppm $CO_2$ concentration. The optimum working temperature of $CO_2$ sensors is at $75^{\circ}C$.

• 한국재료학회지
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• 제25권6호
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• pp.300-304
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• 2015

Nanorod ZnO and spherical nano ZnO for gas sensors were prepared by hydrothermal reaction method and hydrazine method, respectively. The nano-ZnO gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties were investigated for hydrocarbon gas. The effects of Co concentration on the structural and morphological properties of the nano ZnO:Co were investigated by X-ray diffraction and scanning electron microscope (SEM), respectively. XRD patterns revealed that nanorod and spherical ZnO:Co with a wurtzite structure were grown with (100), (002), (101) peaks. The sensitivity of nanorod and spherical ZnO:Co sensors was measured for 5 ppm $CH_4$ and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to the $CH_4$ and $CH_3CH_2CH_3$ gas of spherical nano ZnO:Co sensors was observed at Co 6 wt%. The spherical nano ZnO:Co sensor exhibited a higher sensitivity to hydrocarbon gas than nanorod ZnO.

• 센서학회지
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• 제17권4호
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• pp.303-307
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• 2008

$NiO,\;Cu_2O,\;Mn_2O_3$ and $Cr_2O_3$ as p-type semiconductors were added in CoO with 15 wt.% ethylene glycol binder and measured the butane gas sensing characteristics. The highest sensitivity is obtained for the NiO-CoO sensors. CoO-20 at.% NiO sensor with 15 wt.% ethylene glycol binder sintered at $1100^{\circ}C$ for 24 h exhibits high sensitivity of 90 % to 5000 ppm butane gas at the sensor temperature of $250^{\circ}C$, compared to low sensitivities at the low operating temperature for commercial sensors. Response and recovery times are, respectively, within few seconds and 1min in the static flow system, indicating rapid adsorption and desorption of butane gas on sensor surface even at this low temperature.

• 한국재료학회지
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• 제20권8호
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• pp.408-411
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• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

• 센서학회지
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• 제25권2호
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• pp.124-130
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• 2016

NDIR $CO_2$ gas sensor was built with ASIC implemented thermopile sensor which included temperature sensor and unique elliptical waveguide structures in this paper. The temperature dependency of dual infrared sensor module ($CO_2$ and reference IR sensors) has been characterized and its output voltage characteristics according to the temperature and gas concentration were proposed for the first time. NDIR $CO_2$ gas and reference IR sensors showed linear output voltages according to the variation of ambient temperatures from 243 K to 333 K and their slopes were 14.2 mV/K and 8.8 mV/K, respectively. The output voltages of temperature sensor also presented a linear dependency according to the ambient temperature and could be described with V(T)=-3.191+0.0148T(V). The output voltage ratio between $CO_2$ and reference IR sensors revealed irrelevant to the changes of ambient temperatures and gave a constant value around 1.6255 with standard deviation 0.008 at 0 ppm. The output voltage of $CO_2$ gas sensor at zero ppm $CO_2$ gas consisted of two components; one is caused by the HPB (half pass-band) of IR filter and the other is attributed to the part of $CO_2$ absorption wavelength. The characteristics of output voltages of $CO_2$ gas sensor could be accurately modeled with three parameters which are dependent upon the ambient temperatures and represented small average error less than 1.5% with 5% standard deviation.

• 한국재료학회지
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• 제21권10호
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• pp.546-549
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• 2011

Nano-sized $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of the detection gas. The nano-sized $SnO_2$ thick film sensors were treated in a $N_2$ atmosphere. The structural properties of the nano $SnO_2$with a rutile structure according to XRD showed a (110) dominant $SnO_2$ peak. The particle size of $SnO_2$:Ni nano powders at Ni 8 wt% was about 45 nm, and the $SnO_2$ particles were found to contain many pores according to the SEM analysis. The sensitivity of the nano $SnO_2$-based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors doped with 8 wt% Ni. The response time of the $SnO_2$:Ni gas sensors was 10 seconds and recovery time was 15 seconds for the $CH_4$ and $CH_3CH_2CH_3$ gases.

• 한국재료학회지
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• 제22권7호
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• 센서학회지
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• 제27권5호
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• pp.294-299
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• 2018

This article describes the output properties of non-dispersive infrared carbon dioxide($CO_2$) sensors resulting from the changes in ambient temperatures. After the developed sensor module was installed inside the gas chamber, the temperature was set to 267 K, 277 K, 300 K, and 314 K, and the concentrations of $CO_2$ gas were increased from 0 to 5,000 ppm. Then, the output voltage at each concentration was obtained. Through these experimental results, two observations were made. First, both the $CO_2$ sensor and the reference sensor showed an increase in the output voltages as the temperature rose from 0 ppm, Second, the full scale outputs of the $CO_2$ sensor grew as the temperature increased. The output characteristics were analyzed based on two factors: change in the radiant energy of the infrared light source and change in the absorptivity of $CO_2$ gas according to the ambient temperature. Additionally, temperature compensation methods were discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.209-212
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1631-1636
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• 1989

A space charge model for semiconductor reduced gas sensors has been roposed and applied to gas sensing mechanism. SnO2-x and SnO2-x/Pt thin film were deposited by vacuum evaporating method. And Hall effect and gas sensitivity characteristics of these sensors were measured. From the space charge model and carrier concentration, the number of the adsorbed gas atom on the solid surface was calculated quantitatively. The gas sensing model was compared with CO gas sensitivities of the fabricated thin film gas sensors.