• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.167-168
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• 2001

• Korean Chemical Engineering Research
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• 제43권6호
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• pp.728-739
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• 2005

활성탄을 흡착제로 이용한 2bed-6step PSA 공정에서 이성분 혼합기체 $H_2/Ar$(80％/ 20％)와 삼성분 혼합기체 $H_2/Ar/CH_4$(60％/ 20％/ 20％)의 수소 분리를 연구하였다. 비등온-비단열 상태에서 LRC 등온식과 LDF 모델을 고려하여 공정실험과 공정모사를 하였으며, 주기정상상태에 도달할 때까지 탑 내의 농도와 온도변화를 각각 알아보았다. 두 공정 모두에서 수소에 대한 순도 99％와 회수율 75％의 결과를 얻을 수 있었다. 이때, PSA 공정에 미치는 영향으로는 공급유량, 흡착압력 그리고 P/F ratio를 변수로 실험과 전산모사를 수행하여 결과를 비교하였다. 이 결과로부터, 다성분에서 최적의 공정조건을 결정에서 중요한 결정요인과 삼성분에서 최적의 공정조건을 알아보았다.

• 전기전자학회논문지
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• 제19권4호
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• pp.535-540
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• 2015

디지털 X-선 촬영 장치에 응용되는 MSGC형 검출기를 설계 및 제작하였다. 기판의 재질은 실리콘기판과 유리기판을 사용하였으며, 기판위에 증착된 전극물질은 포토리소그래피 공정을 이용하였으며, 크롬을 전극의 재료를 이용하였다. 양전극의 폭은 $10{\mu}m$, 음전극의 폭은 $290{\mu}m$로 각각 제작하였다. 양전극과 음전극 사이의 거리는 $100{\mu}m$ 이고, 검출기의 유효영역은 $50{\times}50mm^2$로 설계하였다. 그리고 양전극의 수는 80개로 하였고, 양전극의 전압이 600 Volt 이상 인가한 경우 양전극과 음전극 부분이 방전되어 끊어진 현상을 확인하였다. 결과적으로 검출기체인 Ar(90%) + $CH_4$(10%) 기체 하에서 X-선관의 전압은 42 kV, 최대전류 1 mA까지 인가하여 연구를 수행하였다.

• 한국진공학회지
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• 제10권1호
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• pp.9-15
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• 2001

질량분석기가 장착된 초고진공챔버를 사용하여 미소체적을 갖는 평판표시소자용 패널내부에 존재하는 잔류가스의 전체압력과 분압을 성공적으로 측정하였다. 패널내부의 전체압력은 $10^{-6}$Torr범위로 측정되었으며, 전체압력의 증가에 크게 기여하는 가스분압은 아르곤, 메탄 및 헬륨 분압들이었다. 패널의 진공패키징을 위한 배기공정시 가열온도는 고진공패키징에 있어서 매우 중요하며, 가열배기 온도가 높을수록 전체압력과 메탄분압은 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.75-79
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• 2003

We studied InP etch results in high density planar inductively coupled $BCl_3$ and $BCl_3$/Ar plasmas. The investigated process parameters were ICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of ICP source power and RIE chuck power raised etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness < 2 nm) with a moderate etch rate ($300\;{\sim}\;500\;{\AA}/min$) after the planar $BCl_3/Ar$ ICP etching. It may make it possible to open a new regime of InP etching with $CH_4/H_2$ - free plasma chemistry. Some amount of Ar addition (< 50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• 한국분말재료학회지
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• 제17권4호
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• pp.295-301
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• 2010

Multi shell graphite coated Ag nano particles with core/shell structure were successfully synthesized by pulsed wire evaporation (PWE) method. Ar and $CH_4$ (10 vol.%) gases were mixed in chamber, which played a role of carrier gas and reaction gas, respectively. Graphite layers on the surface of silver nano particles were coated indiscretely. However, the graphite layers are detached, when the particles are heated up to $250^{\circ}C$ in the air atmosphere. In contrast, the graphite coated layer was stable under Ar and $N_2$ atmosphere, though the core/shell structured particles were heated up to $800^{\circ}C$. The presence of graphite coated layer prevent agglomeration of nanoparticles during heat treatment. The dispersion stability of the carbon coated Ag nanoparticles was higher than those of pure Ag nanoparticles.

• 한국표면공학회지
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• 제42권5호
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• pp.216-219
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• 2009

A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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• pp.33-38
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• 2004

Molecular modeling of gas permeation through zeolite membranes with/without intercrystalline region was carried out. Molecular dynamics (MD) and Monte Carlo (MC) simulations were performed to estimate the diffusion coefficient and adsorption parameters respectively, and our proposed combined method of molecular simulation techniques with a permeation theory (CMP) was used to estimate gas permeability. The calculated permeability of gases (Ar, He, Ne, $N_2$, $0_2$, $CH_4$) at 301 K for the single crystal membrane model was about one order of magnitude larger than the experiential values, although the dependence on the molecular weight of the permeating species agreed with experiments. On the other hand, the estimated permeability using the diffusivity and adsorption parameters of the intercrystalline region model was in good agreement with the experiments. The consistency between experiments and the estimated values means the importance of considering the intercrystalline region and the validity of CMP method to predict the performance of zeolite membranes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.