• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.240-240
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• 2015

본 논문에서는 플라즈마 모델링과 식각 표면 분석을 통해 가스 비율 변화에 따른 $CF_4/C_4F_8/Ar$ 유도결합 플라즈마의 특성과 Si 및 $SiO_2$의 식각 메커니즘에 대해 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.217-220
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• 2001

The possibility of cerium dioxide (CeO$_{7}$ ) thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching CeO$_2$ thin films have been performed in an inductively coupled C1$_2$/CF$_4$/Ar plasma. The high etch rate of the CeO$_2$ thin film was 250 ${\AA}$/m at a 10% addition of Cl$_2$ into the Ar(80)/CF$_4$(20). The surface reaction of the etched CeO$_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.252-253
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• 2009

In this study, the deformation and etch characteristics of ArF and EUV photoresists were compared in a dual frequency superimposed capacitively coupled plasma (DFS-CCP) etcher systems using $CF_{4}/O_{2}/Ar$ and $CF_{4}/CHF_{3}/O_{2}/Ar$ mixture gas chemistry which are typically used for BARC open and $Si_{3}N_{4}$ teching chemistry, respectively. Etch rate of the resists tend to increase with low-frequency source power ($P_{LF}$) and high-frequency source ($f_{HF}$). The etch rate of ArF resist was hgither than that of EUV resist.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.543-550
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• 2002

In this paper, the $CF_4$ decomposition rate and by-product were investigated for two simulated plasma reactors which are metal particle reactor and spiral wire reactors as a function of mixed gases. The $CF_4$ decomposition rate by plasma reactor with metal particle electrode had a gain of 20~25% over that by plasma reactor with spiral wire electrode. The $CF_4$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_4$ decomposition efficiency of metal particle reactor was about 80% at AC 24kV. The $CF_4$ decomposition rate used Ar-$N_2$ as base gas was the highest among three base gases of $N_2$, $Ar-N_2$, air. The by-products of the $N_2$, $N_2Ar$ base as were similar, but in case of air base they were different.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.22-25
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• 2004

In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. The optimum condition appears to be under a 10 % $CF_4/(Cl_2+Ar)$ gas mixture in the present work.

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.37-40
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• 2004

Electron swarm parameters in pure $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation(BEq.) method and the Monte Carlo simulation(MCS) The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.912-916
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• 2002

In this paper, the $CF_4$ decomposition rate and by-product were investigated for a simulated two plasma reactors which are metal particle reactor and spiral wire reactor as function of mixed gases. The $CF_4$ decomposition rate by plasma reactor with metal particle electrode had a gain of 20~25[%] over that by plasma reactor with spiral wire electrode. The $CF_4$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_4$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. The $CF_4$ decomposition rate used $Ar-N_2$ as base gas was the highest among three base gases of $N_2$, $Ar-N_2$, air. The by-products of the $N_2$, $Ar-N_2$ base as were similar, but in case of air base they were different.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.