• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.35-36
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.995-999
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• 2007

The lead zirconate titanate (PZT) powders were synthesized to make the piezoelectric ceramics in low temperature as low as $900^{\circ}C$. To investigate the influence of additives on sintering of PZT, two kinds of sintering aids were made as follows; $wB_2O_3-xBi_2O_3-zCuO$and LiBiO2-CuO. The sintering aid, $1{\sim}3$ wt.% $LiBiO_2-CuO$, was added into these PZT powders and the specimens were fired at temperature in the range of $800{\sim}1200^{\circ}C$. The highest density was shown in the specimen with 1 wt.% $LiBiO_2-CuO$ as additive at temperature of $900^{\circ}C$. The sintered specimen were analyzed by X-ray diffraction(XRD) and scanning electron microscopy (SEM) was utilized to observe the microstructure, especially the densified morphology of specimens. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. The scanning electron microscopy(SEM) was utilized to observe the structure of specimens after firing at $900^{\circ}C$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. The high sinterability of PZT ceramics was attributed to the low formation temperature of the liquid phase of additives.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.206-211
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• 2017

$BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

• Progress in Superconductivity
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• v.2 no.2
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• pp.65-70
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• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.101-106
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• 1992

Sintering behavior, distribution of dopant oxides and electrical properties in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems were studied. The linear shrinkage of ZnO varistors from 850 to 950$^{\circ}C$ was related to the decomposition reaction (py\longrightarrowsp+Bi2O3) of the pyrochlore phase. In the distribution of the dopant oxides (CoO, Sb2O3, Cr2O3), Co distribute uniformly throughout the sample, the distribution of Sb coincided with small particles (spinel phase, Zn7Sb2O12), and Cr distributed very consistently with Sb. The increase in breakdown voltage, due to the addition of Cr2O3, was not only attributed to the decrease in the ZnO grain size but also to the solution of Cr2O3 in the spinel phase. The leakage current (80% V60 ${\mu}\textrm{A}$) was increased by the addition of Cr2O3.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1095-1098
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• 2004

In this study, $Bi_2O_3-B_2O_3-ZnO$ glass system, which was expected to have similar properties with PbO containing glass system, was selected as a PbO replaceable potential composition because the atomic weight and ionic radius of Bi is similar to those of Pb. Glasses with different modifier/former ratio were prepared by melting the raw ingredient mixtures in $Bi_2O_3-B_2O_3-ZnO$ system, and the thermal and electrical properties of the sintered samples were examined. The glass transition temperatures and the dielectric constant of the glass pellets were between 350 $^{\circ}C{\sim}$500 $^{\circ}C$ and 15-35, respectively.