• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.1
• /
• pp.89-95
• /
• 2005

We derived a formula which can calculate the space distribution of refractive index variation by an applied electric field about Bi$_{12}$ GeO$_{20}$ single crystal. Stereographic projection maps of refractive index variation by an applied electric field were made out using numerical value to be calculated by this formula. By the calculated results, since an electric field had applied to [(equation omitted) 1 1] direction and [1 (equation omitted) 1] direction of Bi$_{12}$ GeO$_{20}$ crystal, positive variation of the refractive index of [(equation omitted) 1 1] direction and [1 (equation omitted) 1] direction was the largest. The incremented refractive index per unit electric field was +3.2410${\times}$10$^{-11}$ V$^{-1}$ for the wavelength of 6328 $\AA$. Since an electric field had applied to [1 1 1] direction and [(equation omitted) 1] direction, negative variation of the refractive index of [1 1 1] direction and [(equation omitted) 1] direction was the largest. The decremented refractive index per unit electric field was -3.2410${\times}$10$^{-11}$ V$^{-1}$ for the wavelength of 6328 $\AA$.

• Korean Journal of Crystallography
• /
• v.9 no.1
• /
• pp.30-38
• /
• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

• Journal of Korean Ophthalmic Optics Society
• /
• v.1 no.2
• /
• pp.37-42
• /
• 1996

The $Bi_{12}(Si,Ge)O_{20}$ single crystals were prepared by Czochralski method and the study of electrical and optical properties were carried out. The activation energy of the electrical conductivity was $E_g$=1.12 eV. The optical energy gap measured in the room temperature is found to be 2.3 eV. A.c. conductivity of crystal $Bi_{12}(Si,Ge)O_{20}$ was measured at temperatures from 290 K to 570 K in the frequency range from 50 kHz to 30 MHz. The a.c. conductivity is proportional to ${\omega}^s$. In view of this it should be hopping conduction mechanisms. At high frequencies, the power exponent was s=2. The low frequency dielectric constants were 54 for $Bi_{12}(Si,Ge)O_{20}$ and 41 for $Bi_{12}(Si,Ge)O_{20}$ single crystals.

• Korean Journal of Crystallography
• /
• v.2 no.2
• /
• pp.32-40
• /
• 1991

The effects of compositional variation, rotation speel and pulling rate on the growth of optical quality Bi120e02(1 crystals were examined. It was found to flatten the shape of crystal-melt interface for yowing a single crystals less than about 30mm in diameter at the rotation speed of 50rpm. Diameter of crystals with flat interface was increased as the pulling rate. The precipitation of Bi40e3012 phase set limits to pulling rate of BGO crystals. Precipitate-free BGO crystals were grown under pulling rate of 2mm l hr which released the stress resulted from too hi어 Pulling rate, and from 6. IBi203·GeO2 batch composition obtained by addition of 0.1 mole Bi203 into Bi-deficient melts to fill up the deficiency resulted from gradual volatilization of Bi2O). The pale-yellow colored crystals had good quality in that dislocation density was less than 103pits/cm, and it also exhibited transmittance of 70% and optical activity of 23°/mm. and SAW velosity was measured 1700m/sec on 111 cut 110 propagating BGO crystals. The SAW filter with electrode thickness of 9.8um was fabricated by using the electron beam and dry etching technique, it makes Bi12GeO20 devices intersting for color TV IF with half device size.

• Korean Journal of Crystallography
• /
• v.8 no.1
• /
• pp.38-47
• /
• 1997

A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.