• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.175.2-175
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• 2002

• 한국재료학회지
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• 제19권11호
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.282-285
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• 2012

Lead-free (Bi0.5Na0.41K0.09)TiO3 (BNKT) multilayer ceramic actuators were prepared using tape-casting and screen-printing techniques. Co-firing behavior of BNKT/AgPd laminates was examined as a function of sintering temperature. It was found that co-firing induced bending and electrical properties were very sensitive to sintering condition. By optimizing sintering conditions, lead-free electrostrictive multilayer actuators with normalized strain Smax/Emax of 266 pm/V have been successfully fabricated, which is promising for lead-free actuator applications.

• 자원환경지질
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• 제42권3호
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• pp.177-193
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• 2009

삼광광상은 선캠브리아기 경기육괴의 화강편마암내에 발달된 단열대(NE, NW)를 따라 충진한 8개의 괴상맥으로 구성된 중열수 석영맥광상이다. 이 광상의 광화작용은 여러번의 단열작용에 의해 형성된 두시기의 석영+방해석시기(광화I시기)와 방해석시기(광화II시기)로 구성된다. 광화I시기의 열수작용에 의한 변질작용은 견운모화, 녹니석화, 탄산염화, 황철석화, 규화, 및 점토화작용등이 관찰되며 견운모대는 석영맥과 접촉한 부분에서 녹니석대는 석영맥으로부터 멀어짐에 따라 관찰된다. 견운모대의 모암변질광물은 대부분이 견운모 및 석영이며 일부 일라이트, 탄산염광물, 녹니석으로 구성된다. 녹니석대의 모암변질광물은 주로 녹니석, 석영과 소량 견운모, 탄산염광물 및 녹염석으로 구성된다. 견운모의 Fe/(Fe+Mg) 값은 0.45${\sim}$0.50(0.48$\pm$0.02)이며 백운모-펜자이트족에 해당되고 녹니석의 Fe/(Fe+Mg) 값은 0.74${\sim}$0.81(0.77$\pm$0.03)이고 대부분 브런스비자이트에 해당된다. 견운모와 녹니석에 대한 $Al_{IV}$-FE/(FE+Mg)의 다이어그램은 변질시 같은 광종의 견운모와 녹니석의 형성온도를 나타내는 지시자로써 유용하다. 이것은 계산된 녹니석 단종의 활동도가 $a3(Fe_5Al_2Si_3O_{10}(OH)_6$=0.0275${\sim}$0.0413, $a2(Mg_5Al_2Si_3O_{10}(OH)_6$=1.18E-10${\sim}$7.79E-7, $a1(Mg_6Si_4O_{10}(OH)_6$=4.92E-10${\sim}$9.29E-7로서 삼광광상의 녹니석은 iron-rich 녹니석으로 비교적 고온 (T>450$^{\circ}C$에서 모암과 평형상태에서 온도가 감소함에 따라 형성되었음을 알 수 있다. 모암변질시 ${\alpha}Na^+$, ${\alpha}K^+$, ${\alpha}Ca^{2+}$ 및 ${\alpha}Mg^{2+}$는 각각 ${\alpha}Na^+$=0.0476($400^{\circ}C$), 0.0863($350^{\circ}C$), ${\alpha}K^+$=0.0154($400^{\circ}C$), 0.0231($350^{\circ}C$), ${\alpha}Ca^{2+}$=2.42E-11($400^{\circ}C$), 7.07E-10($350^{\circ}C$), ${\alpha}Mg^{2+}$=1.59E-12($400^{\circ}C$), 1.77E-11($350^{\circ}C$)이며 열수용액의 pH는 5.4${\sim}$6.4($400^{\circ}C$), 5.3${\sim}$5.7($350^{\circ}C$)로서 모암변질시 열수용액는 약산성이었음을 알 수 있다. 모암변질시 이득원소(부화원소)는 $TiO_2$, $Fe_2O_3(T)$,CaO, MnO, MgO, As, Ag, Cu, Zn, Ni, Co, W, V, Br, Cs, Rb, Sc, Bi, Nb, Sb, Se, Sn 및 Lu 등이며 특히 대부분의 광상에서 Ag, As, Zn, Sc, Sb, S,$CO_2$ 등의 원소가 현저하게 증가하므로 중열수 및 천열수 금-은광상의 탐사에 지시원소로서 활용될 수 있을 것이다.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.190-193
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• Corrosion Science and Technology
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• 제17권2호
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• pp.45-53
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• 2018

A new 80Ti-15Ta-5Zr wt% alloy surface was protected by anodic oxidation in phosphoric acid solution. The protective oxide layer (TiO2, ZrO2 and Ta suboxides and thickness of 15.5 nm) incorporated $PO{_4}^{3-}$ ions from the solution, according to high resolution XPS spectra. The AFM analysis determined a high roughness with SEM detected pores (20 - 50 nm). The electrochemical studies of bare and anodically oxidized Ti-15Ta-5Zr alloy in Carter-Brugirard saliva of different pH values and saliva with 0.05M NaF, pointed to a nobler surface for the protected alloy, with a thicker electrodeposited oxide layer acting as a barrier against aggressive ions. The oxidized alloy significantly decreased corrosion current densities and total quantity of ions released into the oral environment in comparison with the bare one, at higher polarisation resistance and protective capacity of the electrodeposited layer. The impedance data revealed a bi-layered oxidation film formed by: a dense, compact, barrier layer in contact with the metallic substrate, decreasing the potential gradient across the metal/oxide layer/solution interface, reducing the anodic dissolution and a more permissive, porous layer in contact with the electrolyte. The open circuit potential for protected alloy shifted to nobler values, with thickening of the oxidation film signifying long-term protection.

• Bulletin of the Korean Chemical Society
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• 제30권3호
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• pp.630-635
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• 2009

For use as a photocatalyst, bismuth tungsten oxide, $Bi_2WO_6$, was successfully synthesized by hydrothermal treatment at pH = 11 and heating at 200 ${^{\circ}C}$ for 24h, and samples were subsequently thermal treated at 400, 600, and 800 ${^{\circ}C}$ to increase crystallinity. TEM results revealed that the initial untreated particles were sheet‐shaped, grain size was below 80 nm, and it increased with treated temperatures. These $Bi_2WO_6$ samples absorbed at around 400 nm in the visible light range and the intensity of absorption was particularly strongest in samples thermal treated at 600 ${^{\circ}C}$. Their photoluminescence abilities, related to the recombination between the excited electrons and holes, were overall small for other general photocatalysts such as TiO2, and the smallest in the case of thermal treatment at 600 ${^{\circ}C}$, as reversible result of UV‐visible absorbance. Methyl orange of 5.0 ppm aqueous solution was almost completely removed after 2 h when treated over the $Bi_2WO_6$ thermal treated at 600 ${^{\circ}C}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.264-264
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• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.68-71
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• 2004

본 연구는 싱크로트론 방사광의 단색광 (monobeam)을 이용한 영상을 획득하였다. 영상센서로서 CMOS를 사용하였으며 센서 앞단에는 형광체 (phosphor)를 이용하여 방사광에 대한 빛의 신호로서 영상을 획득하였다. 사용된 싱크로트론 방사광의 beam size는 $5mm{\times}2mm$ 이며 ion chamber를 통한 beam intensity 는 $10{\times}10^{-7}$이다. 형광체는 각각 ZnS(Cu:Al), ZnS(Ag,Al), $BiTiO_3$, $Y_2O_2S(Tb)$로서 4가지를 사용하였으며 여기에 사용된 형광체는 기계식 스크린 프린팅 (Screen Printing) 방식으로 직접 제조하였다. 두께는 모두 동일하게 $10{\mu}m$이며 각각에 대한 PL(Photoluminescence)을 측정하여 분석하였다. object로는 물고기와 20linepair를 사용하였으며 CMOS센서를 이용하여 각각의 phosphor에 대하여 영상을 획득하였다. 영상의 평가는 20line pair 영상의 MTF를 이용하였다. 각각의 형광체에 대한 MTF는 5 lp/mm 에서는 0.5650, 0.2150, 0.7890, 0.3840 이며 10 lp/mm 은 0.4500, 0.0900, 0.2510, 0.1500이고 15 lp/mm 는 0.1900, 0.0300, 0.1430, 0.0500이며 마지막으로 20 lp/mm 은 0.0810, 0.004, 0.0500, 0.0320의 MTF 값을 나타내었다. $10{\mu}m$ 두께에 대하여 ZnS(Cu:Al)이 가장 좋은 MTF의 값을 나타내었다.