• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.546-552
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• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_{2}$$O_{3}$와 BN을 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 BaT$iO_{3}$ PTCR 재료에 $Bi_{2}$$O_{3}$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_{2}$$O_{3}$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 Y-BaT$iO_{3}$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다.$Bi_{2}$$O_{3}$ 결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 BaT$iO_{3}$에 고용이 되지 않는 것으로 밝혀졌으며 $B_{2}$O/wub/3를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로서 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• Electrical & Electronic Materials
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• v.3 no.2
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• pp.90-98
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• 1990

Y-Bi-Ba-Cu-O계 초전도체를 보통의 ceramic방법과 screen printing과 소결법으로 원판형과 후막형으로 제작하였다. B $i_{2}$ $O_{3}$를 첨가하여 소결한 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 초전도 성질은 전기저항측정과 자석위에 부상 유무로 조사하였다. 또한 B $i_{2}$ $O_{3}$를 첨가함에 따라 소결된 시편의 미세구조에 어떠한 영향을 주었는지 알아보았다. 전기저항 측정시 Yttrium 대신에 Bi로 부분적으로 치환한 경우인 $Y_{0.85}$B $i_{0.15}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 상온 저항치가 기본조성인 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 그것보다 향상된 미세구조로 인해 더 작은 값을 나타낸다. 반면 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$에다가 초과로 B $i_{2}$ $O_{3}$를 첨가한 경우 오히려 미세구조는 불량하고 상온저항치도 더 높다. 이러한 사실은 입계에 잔류하는 이차상은 전기적 성질에는 크게 영향을 주나 자기적 성질에는 거의 영향을 주지않는 것으로 보인다. 후막으로 Y-Bi-Ba-Cu-O를 제작시 기판에 의해 좌우되는데 단지 magnesia 기판에서 소결시 bulk시편과 유사한 성질을 나타냈다.질을 나타냈다.다.

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.583-597
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• 1995

We investigated the effect of the oxygne partial pressure on the phase stability of B $i_{2}$S $r_{2}$Ca C $u_{2}$ $O_{8+x}$ and B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ at 82$0^{\circ}C$. As the oxygen pressure decreased, B $i_{2}$Sr/sb 2/CaC $u_{2}$ $O_{8+x}$ melted at 2.2$\times$10$^{-3}$ atm $O_{2}$. In the case of the B $i_{1.7}$P $b_{0.4}$S $r_{2}$C $a_{2}$ $O_{10+x}$, it started to decompose into theree phases of B $i_{2}$S $r_{2}$Cu $O_{6+y}$, $Ca_{2}$Cu $O_{3}$ and C $u_{4}$ $O_{3}$ and C $u_{4}$ $O_{3}$ at 8.0$\times$10$^{-3}$ atm $O_{2}$ and was completely decomposed at 4.3$\times$10$^{-3}$ atm $O_{2}$ B $i_{2}$S $r_{2}$C $a_{2}$C $u_{3}$ $O_{10+x}$ phase was not formed by the solid state reaction from the mixutre of $i_{2}$S $r_{2}$CaCu.sub 2/ $O_{8+x}$, $Ca_{2}$Cu $O_{3}$ and CuO down to 2.2$\times$10.sub -3/ atm O.sub 2/ but formed by the solidifciation of the formed from the mixture of the intermediate compounds in the Bi-Sr-Ca-Cu-O system and the fromation temperature of Bi.sub 2/S $r_{2}$C $a_{2}$Cu.$_{3}$ $O_{10+x}$ can be lowered by reducing oxygen partial pressure.e.e.ure.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.295-299
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• 1996

In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.175-183
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• 1993

Amorphous Semicondyctor로서 Chalcogenide계의 Ge-Se-Bi계 비정질화와 결정화 실험을 통하여 전기전도도를 평가코자 하였다. 시료의 조성범위는 G $e_{15-25}$S $e_{65-85}$B $i_{2.5-15B}$의 범위에서 5N의 Ge, Se, Bi metal분말을 사용하였다. 시료는 석영관에 진공 장입후 용융시켜 비정질화 하였다. 이때 열처리 조건은 1000.deg.C에서 10시간 동안 가열하였으며 급냉 조건은 3834.deg.C/sec로 처리하였다. 비정질 sample의 결정화는 결정핵을 형성 시킨 후 온도 변화 및 시간의 변화를 주면서 결정을 성장시켰으며 이때 B $i_{2}$S $e_{3}$와 GeS $e_{2}$ 결정상을 관찰 할 수 있었다. 박막화는 위의 실험에 사용된 Bulk sample을 사용하여 박막을 제작하였으며 유리화 영역은 Ge 15 at%, Se 70 at% 이상, Bi가 10 at% 이하일 때 비정질화가 용이하였다. Bulk의 경우 Ge를 20 at%로 고정시 Bi의 at% 함량이 증가함에 따라 전기전도도가 증가했으며 Bi가 7.5 at%이상일때 급격한 전도도의 증가를 가져왔다. 박막의 경우엔 Bulk sample보다 Bi의 함량이 증가시 더욱 큰 전도도의 증가를 가져왔다. G $e_{20}$S $e_{77.5}$B $i_{2.5}$ 저성의 결정화 경우 330.deg.C에서 4hr 유지시킨 경우가 가장 양호하였다.다.하였다.다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.6
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• pp.11-15
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• 1979

Electrical switching phenomenon was observed in the Fe2O3-Bi2O3 system for the sintering temperature range of 700$^{\circ}$~85$0^{\circ}C$ for DC conductivity measurements of these sinterd materials in the ambient temperature range of 30$^{\circ}$~20$0^{\circ}C$ have shown that the conductivity increases with increasing the sitering temperature and ambient temperature. The formation of the current channel and the experimental evidence of the dependence of switching threshold voltage on the ambient temperature, strongly indicates that the main electrical switching mechanism of sintered Fe2O3-Bi2O3 is thermal effect.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.15-19
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• 2003

For the purpose of standardization of the critical current measurement, it is meaningful to describe how $I_{c}$ will behave as the stress/strain level changes. In this study, strain dependencies of the critical current $I_{c}$ in Ag-alloy sheathed multifilamentary Bi(2212) and Bi(2223) superconducting tapes were evaluated at 77K, 0T. The external reinforcement was accomplished by soldering AgMgNi alloy tapes onto single or both sides of the sample. With the external reinforcement to the Bi(2212) tape, the strength of the tapes increased but the critical current at the strain free state, $I_{c0}$ decreased in some cases. The strain for onset of the $I_{c}$ degradation, $\varepsilon$$_{\irr}$, increased with an increase of the reinforcing volume and then saturated to a certain value. The effect of external reinforcement on the degradation of $I_{c}$ due to the bending strain in the Bi(2223) tape was also examined. Contrary to the expectation, it showed a significant $I_{c}$ degradation even at a small strain of 0.4 %. The observations of damage morphologies gave a good explanation to the $I_{c}$ behavior.c/ behavior.r.