• Title/Summary/Keyword: $Ba_{0.5}Sr_{0.5}TiO_3$

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The Study on the Etching Characteristics of (Ba, Sr)TiO$_3$ Film by Inductively Coupled Plasma (유도결합 플라즈마에 의한(Ba, Sr)TiO$_3$ 박막의 식각 특성 연구)

  • 김승범;이영준;염근영;김창일
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.56-62
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    • 1999

  • In this study, (Ba, Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as rf power, dc bias voltage, and chamber pressure. The etch rate was 56 nm/min under $Cl_2$/($Cl_2$+Ar) gas mixing ratio of 0.2, rf power of 600 W, dc bias voltage of 250 V, and chamber pressure of 5 mTorr. At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba, Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). Ba is removed by chemical reaction between Sr and Cl to remove Sr. Ti is removed by chemical reaction such as $TiCl_4$ with ease. The results of secondary ion mass spectrometer (SIMS) analysis compared with the results of XPS analysis and the results were the same.

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The Etching Mechanism of $(Ba, Sr)TiO_3$Thin Films in $Ar/CF_4$ High Density Plasma ($Ar/CF_4$ 고밀도 플라즈마에서 $(Ba, Sr)TiO_3$ 박막의 식각 메카니즘)

  • Kim, Seung-Beom;Kim, Chang-Il
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.5
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    • pp.265-269
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    • 2000

  • $(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

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Structural and Dielectric Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ with Addition MgO (MgO의 첨가량에 따른 $Ba_{0.5}Sr_{0.5}TiO_3$의 구조적, 유전적 특성)

  • You, Hee-Wook;Ahn, Ho-Myoung;Koo, Sang-Mo;Nam, Song-Min;Lee, Young-Hie;Koh, Jung-Hyuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.296-297
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    • 2006

  • A conventional oxide method was used to fabricate $Ba_{0.5}Sr_{0.5}TiO_3$(BST) ceramic plates doped by MgO from 10 to 60 wt%. The structural and dielectric properties of BST were investigated as a fraction of MgO dopant concentration. The dielectric properties of the MgO doped BST were strongly dependent on the MgO contents. The dielectric constant and dielectric loss of MgO doped BST decreased with increasing MgO content.

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