• Title/Summary/Keyword: $BaTi_4O_9$

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Effect of $BaTiO_3$ Powder Content on the Dielectric Constant of Epoxy/$BaTiO_3$ Composite Embedded Capacitor Films ($BaTiO_3$ 입자 함량이 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수에 미치는 영향)

  • Cho Sung-Dong;Lee Joo-Yeon;Hyun Jin-Gul;Lee Sang-Yong;Paik Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.1-9
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    • 2004
  • We investigated the effect of $BaTiO_3$ powder content on the dielectric constant of epoxy/$BaTiO_3$ composite embedded capacitor films (ECFs). Variations of the dielectric constant of epoxy/$BaTiO_3$ composite ECFs with unimodal $BaTiO_3$ powder content were measured. To explain this result, density of the ECFs was measured, and surface and cross section images of the ECFs were observed. In addition, variations of the dielectric constant of epoxy/$BaTiO_3$ composite ECFs with various bimodal combinations were measured. In the case of unimodal powder, the maximum dielectric constant was about 60 at $60\;vol\%$ S4 powder. And more powder addition lowered the dielectric constant of the ECFs, which was due to voids or pores formation by excess $BaTiO_3$ powder. In the case of bimodal combination, $75vol\%\;BaTiO_3$ powder loading and the dielectric constant of 90 were achieved using $S_5+C_1$ combination, biggest and smallest powder combination.

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Electrical Properties of PZT/$BaTiO_3$/PZT Multilayer Thick Films (PZT/$BaTiO_3$/PZT 다층 후막의 유전특성)

  • Nam, Sung-Pill;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.123-124
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    • 2006
  • The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

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Dielectric Properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ ($Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$계의 유전성)

  • 윤기현;김재현;조경화;송효일
    • Journal of the Korean Ceramic Society
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    • v.23 no.1
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    • pp.7-12
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    • 1986
  • Dielectric properties of $Ba_{0.9}Ca_{0.1}(Ti_{1-x}Sn_x)O_3$ were investigated from x=0 to 0.20, and temperature range -4$0^{\circ}C$~13$0^{\circ}C$ Density and grain size decreased with increasing Sn content due to grain growth inhibitor. Dielectric constant below the Curie temperature increased with increasing Sn content and dissipation factor dec reased. These results are due to grain size effect and internal stress. Curie temperature was shifted to lower temperature with increasing ratio of total polarizability to volume resulting from substitution of $Ba^{2+}$ ion with $Ca^{2+}$ ion $Ti^{4+}$ ion with $Sn^{4+}$ ion.

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Microstructure and Dielectric Properties of $Ba2(Ti_{8.472}Zr_{0.528})O_{20}$ ($Ba2(Ti_{8.472}Zr_{0.528})O_{20}$의 결정구조와 유전특성)

  • Baik, Nam-Seok;Lee, Hun-Sik;Tho, Nam-Woong;Park, Sung;Lee, Byung-Ha
    • Journal of the Korean Ceramic Society
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    • v.33 no.1
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    • pp.1-6
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    • 1996
  • A single phase Ba2(Ti8,472Zr0.528)O20 was prepared by the oxalate method from aqueous solution of BaCl2 TiCl4 and ZrOCl2. The structure ananlysis has been carried out by Rietveld analysis method at room temperature. Powder X-ray data of Ba2(Ti8,472Zr0.528)O20 was indexed with the triclinic lattice(a=7.4587 $\AA$ b=14.0672 $\AA$, c=13.3327 $\AA$, $\alpha$=89.87, $\beta$=79.45 ${\gamma}$=84.46) The R (Residual) values of structure refinement were in a range between 10.00 and 8.00 This analysis proved that the added Zr occupied Ti sites in th structure of Ba2Ti9O20. Ba2(Ti8,472Zr0.528)O20 has excellent dielectric properties(dielectric constant K=40.49 at 5.42 GHz Q=4621) so that it can be used as good microwave dielectric materials.

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Preparation of $BaTiO_3$ Fine Powders by Spray Pyrolysis Using Ultrasonic Atomization Technique (초음파 분무 열분해법에 의한 $BaTiO_3$ 미분말의 제조)

  • 조형진;이종흔;박순자
    • Journal of the Korean Ceramic Society
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    • v.28 no.11
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    • pp.851-858
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    • 1991
  • Spherical fine BaTiO3 powders with an average diameter of 0.3${\mu}{\textrm}{m}$ to 0.9${\mu}{\textrm}{m}$ are prepared at 100$0^{\circ}C$ by the ultrasonic spray pyrolysis of solutions containing Ba(NO3)2 and TiCl4. Experimental variables are adjusted to produce BaTiO3 powders and its effect on the phase, the size and the morphology of the particles are investigated by XRD, SEM, TEM. Each particle consists of small primary particles and has a hollow around its center. The dependence of particle diameters on the concentrations of source solutions indicates that metal salt precursors are dried to precipitate solid particles and decompose to form BaTiO3 phase without gas phase reactions.

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Dielectric properties of ($Sr_{0.50}Pb_{0.25}Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3$$O_{9}$ ceramics for the high-voltage capacitor (고전압 캐패시터용 ($Sr_{0.50}/$Pb_{0.25}$/$Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3O_{9}$ 세라믹의 유전특성)

  • 김세일;정장호;이영희;배선기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.17-20
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    • 1993
  • In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

Chemical Design of Highly Water-Soluble Ti, Nb and Ta Precursors for Multi-Component Oxides

  • Masato Kakihana;Judith Szanics;Masaru Tada
    • Bulletin of the Korean Chemical Society
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    • v.20 no.8
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    • pp.893-896
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    • 1999
  • Novel citric acid based Ti, Nb and Ta precursors that are highly stable in the presence of water were developed. No alkoxides of Ti, Nb and Ta were utilized in the preparation, instead much less moisture-sensitive metallic Ti, NbCl5 and TaCl5 were chosen as starting chemicals for Ti, Nb and Ta, respectively. The feasibility of these chemicals as precursors is demonstrated in the powder synthesis of BaTi4O9, Y3NbO7 and LiTaO3. The water-resistant Ti precursor was employed as a new source of water-soluble Ti in the amorphous citrate method, and phase pure BaTi4O9 in powdered form was successfully synthesized at 800 ?. The Pechini-type polymerizable complex method using the water-resistant Nb and Ta precursors was applied to the synthesis of Y3NbO7 and LiTaO3, and both the powder materials in their pure form were successfully synthesized at reduced tempera-tures, viz. 500-700 ?. The remarkable retardation of hydrolysis of these water-resistant precursors is explained in terms of the partial charge model theory.