• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.172-177
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• 2003

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of $BaTi_4O_9$-based ceramics were studied to develop the materials for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of$875{\circ}C$. The microwave dielectric properties were k=32, Q＊f=9000 GHz, ${ au}_f$=10 ppm/${\circ}C$. As the amount of glass increased, phase decompositions from $BaTi_4O_9;to;BaTi_5O_{11};and;Ba_4Ti_{13}O_{30}$ was observed.

• ETRI Journal
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• v.18 no.1
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• pp.15-27
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• 1996

The effects of $Nd_2O_3$ and $TiO_2$ addition on the microstructures and microwave dielectic properties of $BaO-Nd_2O_3-TiO_2$ system were investigated. $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_{5}O_{14}$ phases were observed for compositions based on BaO/$Nd_2O_3$ = 1 ratio. The compositions deviated from $BaO/Nd_2O_3=1$ ratio were composed of major phases of $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_5O_{14}$, and the compound of $Nd_2O_3$ and $TiO_2(Nd_2Ti_2O_7)$ or that of BaO and $TiO_2(BaTi_4O_9)$. The microstructure of ceramic with $BaO{\cdot}Nd_2O_3{\cdot}4TiO_2$ composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing $Nd_2O_3$, the optimum sintering temperature with maximum density increased, and the dielectric constant(${\varepsilon}_r$) and quality factor(Q) decreased due to the formation of secondary phases. With increasing $TiO_2$, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ${\tau}_f$ shifted toward positive direction. The dielectric ceramics with $BaO/Nd_2O_3=1$ showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.365-370
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• 2003

The phase development process of $Ba_2$ $Ti_{9}$ $O_{20}$ ceramics is not clearly known and frequently accompanies second phases which deteriorate dielectric properties. In synthesizing $Ba_2$ $Ti_{9}$ $O_{20}$ ceramics, in order to trace the reaction sequence during conventional solid-state reaction in BaO-Ti $O_2$ system, different barium sources of BaC0$_3$ and BaTi0$_3$ precursor were used as starting materials. From the analysis of XRD patterns, different secondary phases could be identified depending on the barium source used, which might mean that the equilibrium phases in BaO-Ti $O_2$ system are very difficult to be synthesized. Because the BaTi0$_3$ precursor provides short diffusion paths of ions, the system revealed less secondary phases during solid state reaction. In synthesizing BaO-xSm$_2$0$_3$-4.5Ti0$_2$ system using different barium sources, different secondary phases were developed also. Microstructure and dielectric properties were examined and discussed in terms of secondary phase development.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.561-564
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• 2015

Nano-size $BaTiO_3$ powder was synthesized by relatively simple hydrothermal reaction method. Finely dispersed Ti hydroxide precursor was first precipitated using $Ti(SO_4)_2$ and NaOH solution by applying ultrasonic power and washed thoroughly to remove $SO_4{^{2-}}$ and $Na^+$ ion. Then hydrothermal reaction was done at $160^{\circ}C$ for 6 hrs using solution prepared by washed Ti hydroxide precursor slurry and $Ba(OH)_2{\cdot}8H_2O$ with Ti:Ba mole ratio of 1:1. 200 ~ 500 nm size and uniform size distributed $BaTiO_3$ powder was synthesized by relatively low temperature and simple process.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.448-454
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• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.114-114
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• 1993

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.105-109
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• 2004

[ $BaTi_4O_9$ ]계 유전체 박막을 Si 기판위에 RF Sputtering으로 성장시켜 유전체 박막의 두께 변화에 따른 마이크로파 대역에서 유전체 박막의 유전율 및 유전손실을 측정하였다. 유전체 박막의 두께가 증가함에 따라 유전율은 약간 증가하였으며 마이크로파 대역에서 벌크 유전체와 같은 38의 유전율 값을 얻을 수 있었다. 또한 probe와 상두 전극사이의 접촉 저항을 고려한 값들을 보정함으로서 6GHz의 주파수 대역까지 $BaTi_4O_9$ 박막의 유전손실 값을 안정적으로 측정한 수 있었으며 유전체 박막의 두께가 증가함에 따라 최대 0.0001의 양호한 유전손실 값을 얻을 수 있었다.

• Journal of Magnetics
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• v.11 no.4
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• pp.164-166
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• 2006

We have investigated the dielectric and magnetic properties of ferroelectric-antiferromagnetic $BaTiO_{3}-LaMnO_{3}$ composite with changing relative mole percents. Due to high sintering temperature, i.e. $1150^{\circ}C$, the Ba ion in $BaTiO_{3}$ seems to diffuse into $LaMnO_{3}$; resulting in $BaTiO_{3}-(La,Ba)MnO_{3}$ ferroelectric-ferromagnetic composite. At room temperature, $0.9BaTiO_{3}-0.1LaMnO_{3}$ composite exhibits considerable magnetization (${\sim}0.7\;emu/g\;at\;2000\;Oe$) and low coercive field (${\sim}5\;Oe$). Also it exhibits high dielectric constant (${\sim}560$) and low loss (${\sim}0.08$) at 10 kHz. This result may imply that $BaTiO_{3}-LaMnO_{3}$ could be suitable for a low leakage multiferroic composite.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993