• Korean Journal of Materials Research
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• v.2 no.4
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• pp.248-256
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• 1992

This paper has reviewed some of the basic principles that underlie the field of defect chemistry in simple ATi$O_3$(A=Ca, Sr, Ba) perovskites. Frenkel defects in perovskite structure is very much unlikely, and Schottky defects and intrinsic electronic defects in undoped materials are negligibly small compared with background acceptor impurities. The electrical properties of perovskite ceramics are dependent on the aliovalent impurities. Since perovskite structure is a ternary system, the stoiohiometry between cations as well as cation-anion ratio will affect defect structure and electrical properties. BaTi$O_3$and SrTi$O_3$show a limited deviation from the cation stoichiometry while CaTi$O_3$has significant excess CaO and Ti$O_2$solubility.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.200-210
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• 2009

It is necessary to minimize the mismatch of sintering shrinkage between dielectric ceramic and Ni inner electrode layers for the purpose of developing the ultra high-capacity multi layered ceramic condenser(MLCC). Thus, low temperature sintering of dielectric $BaTiO_3$ ceramic should be precedently investigated. In this work, the influence of the milling condition on sintering behavior and electrical properties of $BaTiO_3$ ceramics was investigated in the $BaTiO_3$(BT)-Mg-Dy-Mn-Ba system with borosilicate glass as a sintering agent. As milling time increased, specific surface area(SSA) of the powder increased linearly, while both sinterability and dielectric property were found to be drastically decreased with an increasing SSA. It was also revealed that the sinterability of the excessively milled $BaTiO_3$ ceramics could be recovered by increasing Ba content, rather than increasing glass addition. These results suggest that the sintering behavior of $BaTiO_3$ ceramics under the high SSA was more strongly dependent on the transient liquid phase caused by Ba addition, than the liquid phase from additional glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.180-181
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• 2009

$(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, $(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ array thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ (0.1~0.7 mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The thickness of all (Ba,Sr,Ca)$TiO_3$ thick films was approximately 60mm. The Curie temperature of doped with 0.1 mol% $Yb_2O_3$ specimen was $45^{\circ}C$, and the dielectric constant and at this temperature was 1062.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.129-133
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with TiO$_2$ underlayer. Ba-ferrite thin films with TiO$_2$ underlayer were deposited by reactive RF/DC magnetron sputtering system at room temperature. TiO$_2$ underlayer was reactive sputtered with $O_2$. After deposition, the thin films were annealed at vatious temperatures to get the crystallized sample. Underlayer was used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by TiO$_2$ underlayer. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with TiO$_2$ underlayer can be used as longitudinal recording media.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.53-53
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• 2003

최근 높은 유전상수와 잔류 분극, 비선형 등의 다양한 유전적인 특성으로 인해 산화물 박막이 많은 관심을 가지고 연구되어지고 있다. 많은 산화물 박막중에서도 BaTiO3/SiTiO3 (BTO/STO) 인 공격자는 STO나 BTO 또는 (Ba$_{0.5}$ Sr$_{0.5}$)TiO$_3$ (BST)등의 고용체들과 비교했을 때 아주 뛰어난 유전적인 성질을 나타내고 있다. 특히 1000 $\AA$ 이하의 낮은 두께에서도 높은 유전상수와 비선형도를 가진다는 사실이 선행된 실험에서 밝혀졌는데 BTO와 STO를 각각 2 unit cell (8 $\AA$)로 고정 시킨 후 다층 박막으로 제작했을 때 가장 큰 유전 특성을 얻을 수 있었다. 이런 뛰어난 유전적인 성질은 BTO와 STO 각 층의 두께와 주기 변화에 따른 박막 내부의 인위적인 stress와 그에 따른 격자 변형과 아주 밀접한 관계가 있음으로 생각되어진다. 따라서 이런 두 계면에서의 stress와 격자 변형을 더욱 정착하게 분석하기 위해서는 각 층을 원자 단위로 정확하게 두께 제어를 하고 증착되어지는 과정중에서의 growth mode를 확인하는 것이 무엇보다 중요한 일이다.

• Journal of Aerospace System Engineering
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• v.13 no.2
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• pp.43-50
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• 2019

Satellite and aircraft components are greatly affected by the possibility for missions and safety due to temperature effects. In the field of fuel cells, research is actively carried out for UAV. For the efficiency and stability of the fuel cells, the temperature for operations must be confirmed. In this paper, a smart paint was fabricated with $BaTiO_3$ and $SrTiO_3$ ceramics in order to take advantage of the rapid characteristics of the PTC thermistor, which is the resistance changes abruptly above the Curie point. A coating agent was prepared to prevent the paint from peeling off the samples and the coated models were checked for resistance changes. Moreover, the resistance change of the $BaTiO_3$ and $SrTiO_3$ with temperature conditions was measured before and after coating.

• Journal of Powder Materials
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• v.15 no.1
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• pp.53-57
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• 2008

The amorphous $Fe_{73}Si_{16}B_7Nb_3Cu_1$(at%) alloy strip was pulverized using a jet mill and an attrition mill to get flake-shaped powder. The flake powder was mixed with dielectric $BaTiO_3$ powder and its dispersant to increase the permittivity. The powders covered with dielectric powders and its dispersant were mixed with a binder and a solvent and then tape-cast to form sheets. The absorbing properties of the sheets were measured to investigate the roles of the dielectric powder and its dispersant. The results showed that the addition of $BaTiO_3$ powders and its dispersant improved the absorbing properties of the sheets noticeably. The powder sheet mixed with 5 wt% of $BaTiO_3$ powder and 1 wt% of dispersant showed the best electromagnetic wave absorption rate because of the increase of the permittivity and the electrical resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.17-20
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• 1994

PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.