• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.426-429
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• 2001

The BaTiO$_3$+xNb$_2$O$_{5}$[x=6,8 , 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the BaTiO$_3$+xNb$_2$O$_{5}$ ceramics with the sintering temperature and addition of Nb$_2$O$_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the 2$\theta$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of Nb$_2$O$_{5}$, the intensity of BN (100) Peak was decreased and BN (310), (110) peaks were increased. The grain size of the BaTiO$_3$+Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$ were almost uniform. In the BaTiO$_3$+Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.espectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.193-197
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• 1996

BaTiO$_3$films in pure Ar atmosphere were prepared by RF sputtering method at low substrate temperature(100$^{\circ}C$). The structural and crystallographic properties were studied with deposition conditions and annealing methodes. Deposition rates and structural properties of BaTiO$_3$ thin filles were investigated by the SEM and X-ray diffraction. The chemical composition of BaTiO$_3$ thin films grown on Si(100) wafer was studied by tole EDS and EPHA. The optimised Ar pressure and RF power were 8[mtorr] and 180[W], respectively. The thickness of BaTiO$_3$ thin films deposited at optimised conditions was ∼3400[${\AA}$], and the dielectric constant of the thin films heat-treated at 750[$^{\circ}C$] for 1[hr] was 259.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.315-316
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• 2007

최근 전자제품의 경박단소화와 고성능화에 대한 관심이 증가하면서 내장형 수동소자 (Embedded Passive Device)에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 Ni-coated $BaTiO_3$와 PMMA의 함량 변화에 따른 복합체의 유전적 특성을 연구하였다. Ni-coated $BaTiO_3$첨가량을 0~50%까지 증가시키며 유전율을 측정하였으며, 코팅되지 않은 $BaTiO_3$-PMMA복합체의 유전율과 결과를 비교하였다. 본 연구결과 Ni 코팅에 의한 유전율 증가를 관찰할 수 있었으며, 코팅 상태는 코팅공정시의 시간과 온도 등에 의존한다는 것을 확인하였다. 본 논문에서는 이러한 실험결과를 개선된 혼합법칙을 바탕으로 해석하고자 한다.

• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.561-564
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• 2015

Nano-size $BaTiO_3$ powder was synthesized by relatively simple hydrothermal reaction method. Finely dispersed Ti hydroxide precursor was first precipitated using $Ti(SO_4)_2$ and NaOH solution by applying ultrasonic power and washed thoroughly to remove $SO_4{^{2-}}$ and $Na^+$ ion. Then hydrothermal reaction was done at $160^{\circ}C$ for 6 hrs using solution prepared by washed Ti hydroxide precursor slurry and $Ba(OH)_2{\cdot}8H_2O$ with Ti:Ba mole ratio of 1:1. 200 ~ 500 nm size and uniform size distributed $BaTiO_3$ powder was synthesized by relatively low temperature and simple process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.57-58
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}Na_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}Na_{1/2}TiO_3$. $Bi_{1/2}Na_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_{1/2}Na_{1/2}TiO_3$, $BaCO_3$, $TiO_2$ and $Y_2O_3$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.732-734
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• 2003

A solvothermal synthetic method to $BaTiO_3$ nanoparticle has been investigated in toluene solution with $BaTi(OR)_6$ as precursor. A precursor prepared from barium metal with toluene, isopropanol and titanium isopropoxide was used as a starting material. Weight ratio of precursor to solvent prepared in the mixture are 5/100, 10/100, 20/100 and 50/100wt%. At the weight ratio of 50/100wt%, $BaTiO_3$ butterfly twin crystalline(${\fallingdotseq}100nm$) was obtained after synthesis at $250^{\circ}C$ for 20hrs in an autoclave. X-ray diffraction and transmission electron microscopy showed that the product of 50/100wt% has crystallization. At 5/100, 10/100, and 20/100wt%, however, red colloidal solution was obtained after synthesis and crystalline phase of $BaTiO_3$ was not produced.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.44-48
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• 1996

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified BaTiO$_3$systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between 13$25^{\circ}C$ and 1375$^{\circ}C$. The room temperature resistivity, PTCR effect and ac complex impedence characteristics were studied. It shows that the room temperature resistivity was increased with the increasing Ti/Ba mole ratio and sintering temperature. It was suggested that this result was mainly attributed to its grain-boundary properties

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.