• Electrical & Electronic Materials
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• v.10 no.8
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.224-225
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• 2006

$BaTiO_3$ powder를 epoxy/solvent에 혼합한 슬러리와 solvent에 혼합한 슬러리의 분산 특성을 평가하기 위하여 분산제인 silane을 $BaTiO_3$ powder 표면에 코팅한 powder를 이용하여 분산실험을 진행하였다. Silane 표면 코팅 량에 따른 $BaTiO_3$ 슬러리와 $BaTiO_3$/epoxy 복합 슬러리의 분산 특성은 서로 다른 경향으로 나타남을 확인하였으며, silanae 최적 첨가량은 $BaTiO_3$/solvent 슬러리의 경우 0.3~0.5 wt%, $BaTiO_3$/epoxy/solvent 슬러리의 경우 1wt% 이상 첨가한 조건이었다. 또한 분산성 측정의 방법으로 점도 측정 방법과 함께 표면 거칠기 측정 방법의 가능성을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.495-500
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• 2009

The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.12-12
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• 2009

We weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $(BaNaK)(TiNb)O_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0.05, 0.07 and 0.1mol% of $(BaNaK)(TiNb)O_3$. $(BaNaK)(TiNb)O_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Na_2O_3$,$K_2CO_3$, $BaCO_3$, $TiO_2$ and $Nb_2O_5$ powder, and using solid-state reaction method, too. The microstructure of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction. Also, we are measure the resistivity of sintered bodies with calcinations condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.953-959
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• 2004

BaTiO$_3$ powder has been applied in so much electronic ceramics. Therefore, as recent, the method to add or coat additive will be needed BaTiO$_3$ powder. As a kind of the method, the coating of BaTiO$_3$ powder was considered. In this study, during BaTiO$_3$ powder was coated by BaTiO$_3$ sol, gelation path was experimented. Standard coating condition was set for homogeneous coating. The phase of the gel was deferent by gelation path. It was confirmed the amorphous gel was made in BaTiO$_3$ phase easily at low temperature. In the amorphous gel, particle growth was shown at 900$^{\circ}C$, because crystallization temperature was low. The optimal ratio of sol and powder was at 10 vol% for the homogeneous coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.960-966
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• 2004

On the bases of the results from "Additive Coating of BaTiO$_3$ Powder using Sol Coating Method I", experimental condition was defined. Representative additives for BaTiO$_3$, that is to say, Mg, Ca and Mn were experimented. The sources of the metal ion were used by organometal complex. As added it, the stability of BaTiO$_3$ sol was evaluated. Mg and Ca were stable, however, The solubility limit of Mn-ATH was 0.05 mol ratio in Mn-ATH/sol. The solubility limit of Mg ion in BaTiO$_3$ was lower than 2 mol%. From the x Ray diffraction patterns, lattice parameters were different with temperature and additives, because the solubility of metal ion was varied in BaTiO$_3$. The dielectric constant of BaTiO$_3$ powders which coated with the 1.5 mol% Mg and calcined at 1200$^{\circ}C$ was increased with 20%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.311-312
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• 2007

In this study, composite $BaSrTiO_3$ has been studied for high frequency device applications. Composite $Ba_{0.5}Sr_{0.5}TiO_3$ has high dielectric permittivity and low loss tangent at the relative frequency range from MHz to GHz. 10,30 and 50 wt% of epoxy doped $Ba_{0.5}Sr_{0.5}TiO_3$ powders were prepared with bisphenol A and F polymer employing ball milling process. Epoxy/($BaSrTiO_3$) composites thick films were screen printed on the Cu plated PCB substrates through screen printing methods. The specimens were designed for the embedded capacitor applications. Temperature dependent dielectric permittivity of Epoxy doped $BaSrTiO_3$ ceramics was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.402-405
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• 2001

The BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics were prepared by conventional mixed oxide method. The structural and dielectric properties of the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics with the sintering temperature were investigated. Increasing the sintering temperature, the 2$\theta$ value of BaTiO$_3$peaks were shifted to the higher degree and intensity of the BaTiO$_3$and BaNbO$_3$peaks were increased. In the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$ and 1375$^{\circ}C$, the grain was fine and uniform. Increasing the sintering temperature, the pore was decreased and the dielectric constant was increased. In the BaTiO$_3$+10wt%Nb$_2$O$_{5}$ ceramics sintered at 1375$^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.ctively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.825-828
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• 2008

$Sr_xBa_{(1-x)}TiO_3$ red phosphors doped with Pr(0.13 mol%) and Al(O.23 mol%) were synthesized by solid state reaction method. Orthorhombic perovskite structure with increasing value of x in $Sr_xBa_{(1-x)}TiO_3$:Pr,Al phosphors changed to cubic perovskite structure. Emission bands at 615 nm and 492 nm in $Sr_{0.25}Ba_{0.75}TiO_3$:Pr,Al and $BaTiO_3$:Pr,Al phosphors were observed at room temperature. The main cause of green luminescence at 492 nm was explained by the change of the 4f5d band.