• Title/Summary/Keyword: $BaSO_4$

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A Study on Sound Attenuation of Plant Noise by Enclosure (방음실에 의한 공장설비 소음의 감쇠 효과에 관한 연구)

  • 윤세철;이해경
    • Journal of the Korean Society of Safety
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    • v.9 no.4
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    • pp.119-124
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    • 1994
  • The considerations in the noise control by enclosure are the rise of temperature and sound pressure, transmission loss, absorption coefficient of the materials, the structure of the soundproof panels, an opening and coincidence frequency. But it is very difficult that we obtain the accurate data about those in design, so, the noise reduction after enclosing does not correspond with the calculation. The difference of the noise reduction between the calculation and the measurement was 8.2dBA, and we can obtain the approximate result as the following formula which correct 10dBA, safely.

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Element Dispersion and Wallrock Alteration of TA26 Seamount, Tonga Arc (통가열도 TA26 해저산의 모암변질과 원소분산)

  • Yoo, Bong-Chul;Choi, Hun-Soo;Koh, Sang-Mo
    • Economic and Environmental Geology
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    • v.44 no.5
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    • pp.359-372
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    • 2011
  • TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

Microstructure and Dielectric Properties of $Ba2(Ti_{8.472}Zr_{0.528})O_{20}$ ($Ba2(Ti_{8.472}Zr_{0.528})O_{20}$의 결정구조와 유전특성)

  • Baik, Nam-Seok;Lee, Hun-Sik;Tho, Nam-Woong;Park, Sung;Lee, Byung-Ha
    • Journal of the Korean Ceramic Society
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    • v.33 no.1
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    • pp.1-6
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    • 1996
  • A single phase Ba2(Ti8,472Zr0.528)O20 was prepared by the oxalate method from aqueous solution of BaCl2 TiCl4 and ZrOCl2. The structure ananlysis has been carried out by Rietveld analysis method at room temperature. Powder X-ray data of Ba2(Ti8,472Zr0.528)O20 was indexed with the triclinic lattice(a=7.4587 $\AA$ b=14.0672 $\AA$, c=13.3327 $\AA$, $\alpha$=89.87, $\beta$=79.45 ${\gamma}$=84.46) The R (Residual) values of structure refinement were in a range between 10.00 and 8.00 This analysis proved that the added Zr occupied Ti sites in th structure of Ba2Ti9O20. Ba2(Ti8,472Zr0.528)O20 has excellent dielectric properties(dielectric constant K=40.49 at 5.42 GHz Q=4621) so that it can be used as good microwave dielectric materials.

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Crystal growth and transport current properties of cylindrical (YSmNd)-Ba-Cu-O superconductors by zone melt growth method (존멜팅법을 이용한 원통형 (YSmNd)-Ba-Cu-O계 초전도체의 결정성장 및 수송 전류 특성)

  • Kim, So-Jung;Park, Jong-Kuk
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.5
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    • pp.199-204
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    • 2011
  • $(YSmNd)_{1.8}Ba_{2.4}Cu_{3.4}O_{7-x}$ [(YSN)1.8] high $T_c$ superconductor was directionally grown by zone melt growth process, in air atmosphere. In this study, optimum melting temperature and growth rate were $1100^{\circ}C$ and 3.5 mm/hr, respectively. The microstructure of well-textured (YSN)1.8 samples were examined by XRD, optical microscopy, TEM and SQUID magnetometer. The critical current density of these samples were measured by the direct transporting current method. In the observation using an optical microscopy, nonsuperconducting $(YSmNd)_2BaCuO_5$[(YSN)211] inclusions of (YSN)1.8 superconductor uniformly distributed within the superconducting (YSmNd)$Ba_2Cu_3O_x$[(YSN)123] matrix. The directionally melt-textured (YSN)1.8 superconductor showed an onset $T_c{\geq}90\;K$ and sharp superconducting transition. The transport $J_c$ values were 830 A and $3.93{\times}10^4$ (A/$cm^2$) at 77 K self-field, respectively.

Benzo(a) pyrene Level in Indoor Environment due to the Use of Unvented Heating Facilities (煖房器具를 사용하는 室內空氣중의 벤조(a) 피렌 成分濃度에 관한 硏究)

  • 董宗仁
    • Journal of Korean Society for Atmospheric Environment
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    • v.3 no.1
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    • pp.65-73
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    • 1987
  • Indoor air pollution problems, in fact, have been neglected due to the unawareness of its seriousness and the lack of accumulated data. Recently, some movement of research and regulations, however, have been made for several indoor air pollutants. In this study, one of the carcinogenic polynuclear aromatic hyrocarbon, Benzo(a) pyrene in indoor airborne particulate, was measured and analyzed to estimate emission strength of BaP from an unvented kerosene heater and to know its level in indoor environment with use of a kerosene heater and a wood-burning fireplace. By the measurement of BaP level in a dark room with air exchange rate of app. 3.0, BaP emission strength of a kerosene heater (11,000Btu/hr) was estimated to be 326.6ng/hr (or 29.7 ng/$10^3$ Btu). With 4-hr operation a day of the kerosene heater in an apartment, the BaP level became 2.97ng/m$^3$ from 0.27ng/m$^3$ of background level. The operation of a wood-burning fireplace app. 2hr a day, on the other hand, increased the BaP level from 0.16ng/m$^3$ of background to 3.53ng/m$^3$. So proper ventilation must be considered seriously when unvented heating facilities are used in indoor environment.

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The Electric Properties of Multilayer Ceramic Capacitors with $(Ba,Ca)(TiZr)O_3$ Ceramics ($(Ba,Ca)(TiZr)O_3$ 세라믹을 적용한 적층 칩 커패시터의 전기적 특성)

  • Yoon Jung-Rag;Yeo Dong-Hun;Lee Heun-Young;Lee Suk Won
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.1
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    • pp.1-5
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    • 2006
  • The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

Redox Behavior of Sn and S in Alkaline Earth Borosilicate Glass Melts with 1 mol% Na2O

  • Kim, Ki-Dong;Kim, Hyo-Kwang
    • Journal of the Korean Ceramic Society
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    • v.46 no.3
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    • pp.271-274
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    • 2009
  • Redox investigation of Sn and S ion was attempted in alkaline earth borosilicate glass melts with only 1 mol% $Na_2O$ by means of Square Wave Voltammetry (SWV). According to voltammograms, there was only one peak due to $Sn^{4+}/Sn^{2+}$ in melt doped with $SnO_2$. The calculated standard enthalpy and entropy of the reduction of $Sn^{4+}$ to $Sn^{2+}$ were 116kJ/mole and 62 J/mol K, respectively. The determined redox ratio, [$Sn^{2+}$] / [$Sn^{4+}$] in the temperature range of $1300{\sim}1600^{\circ}C$ was in $0.4{\sim}2.1$. On the contrary, in the voltammogram of melt doped with $BaSO_4$ there was no peak due to $S^{4+}/S^o$ but shoulder that might be attributed to the adsorption of sulfur at the electrode. The absence of the peak related with $S^{4+}/S^o$ was discussed from the view-point of the thermal decomposition behavior of $BaSO_4$ in the glass batch.

HNO3 Etching Properties of BaO-B2O3-ZnO-P2O5 System of Barrier Ribs in PDP (플라스마 디스플레이 패널의 격벽용 BaO-B2O3-ZnO-P2O5계의 HNO3를 이용한 에칭 특성)

  • Jeon, J.S.;Kim, J.M.;Kim, N.S.;Kim, H.S.
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.235-240
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    • 2006
  • We investigated the effect of ZnO filler on the microstructure of $BaO-B_2O_3-ZnO-P_2O_5$ glass system to find an etching mechanism of barrier ribs. The sintering behavior of composites heated in the temperature range $560-600^{\circ}C$ was studied by volumetric shrinkage rate and microstructure. The etching test was carried out in $HNO_3$ solution at $50^{\circ}C$ for 10 min. The volumetric shrinkage of sintered sample decreased with the increased firing temperature because of the formation of two crystals. Glass and ZnO filler react forming the $BaZn_2(PO_4)_2$ crystal phases during the sintering process. Etching phenomenon of sintered samples by $HNO_3$ showed that the $BaZn_2(PO_4)_2$ crystal phase was strongly leached compared to glass matrix, crystal phases and fillers. Therefore, the control of interface by condition of sintering is so important to achieve etching effect in barrier ribs.

Curie Temperature and Tunable Dielectric Properties of Barium Strontium Titanate Thick Films (티탄산 바륨 스트론튬 (BaxSr1-xTiO3) 후막의 상전이온도와 가변 유전특성)

  • Jeon, So-Hyun;Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung;Yoon, Jon-Do
    • Journal of the Korean Ceramic Society
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    • v.43 no.7 s.290
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    • pp.421-426
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    • 2006
  • [ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.