• E2M - 전기 전자와 첨단 소재
• /
• 제10권10호
• /
• pp.1029-1033
• /
• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

• 전자공학회논문지A
• /
• 제33A권5호
• /
• pp.102-107
• /
• 1996

Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

• The Korean Journal of Ceramics
• /
• 제1권4호
• /
• pp.204-208
• /
• 1995

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

• 한국광물학회지
• /
• 제11권1호
• /
• pp.20-31
• /
• 1998

Adsorption of metal elements onto illite and halloysite was investigated at $25^{\circ}C$ using pollutant water collected from the gold-bearing metal mine. Incipient solution of pH 3.19 was reacted with clay minerals as a function of time: 10 minute, 30 minute, 1 hour, 12 hour, 24 hour, 1 day, 2 day, 1 week, and 2 week. Twenty-seven cations and six anions from solutions were analyzed by AAs (atomic absorption spectrometer), ICP(induced-coupled plasma), and IC (ion chromatography). Speciation and saturation index of solutions were calculated by WATEQ4F and MINTEQA2 codes, indicating that most of metal ions exist as free ions and that there is little difference in chemical species and relative abundances between initial solution and reacted solutions. The adsorption results showed that the adsorption extent of elements varies depending on mineral types and reaction time. As for illite, adsorption after 1 hour-reaction occurs in the order of As>Pb>Ge>Li>Co, Pb, Cr, Ba>Cs for trace elements and Fe>K>Na>Mn>Al>Ca>Si for major elements, respectively. As for halloysite, adsorption after 1 hour-reaction occurs in the order of Cu>Pb>Li>Ge>Cr>Zn>As>Ba>Ti>Cd>Co for trace elements and Fe>K>Mn>Ca>Al>Na>Si for major elements, respectively. After 2 week-reaction, the adsorption occurs in the order of Cu>As>Zn>Li>Ge>Co>Ti>Ba>Ni>Pb>Cr>Cd>Se for trace elements and Fe>K>Mn>Al, Mg>Ca>Na, Si for major elements, respectively. No significant adsorption as well as selectivity was found for anions. Although halloysite has a 1:1 layer structure, its capacity of adsorption is greater than that of illite with 2:1 structure, probably due to its peculiar mineralogical characteristics. According to FTIR (Fourier transform infrared spectroscopy) results, there was no shift in the OH-stretching bond for illite, but the ν1 bond at 3695 cm-1 for halloysite was found to be stronger. In the viewpoint of adsorption, illite is characterized by an inner-sphere complex, whereas halloysite by an outer-sphere complex, respectively. Initial ion activity and dissociation constant of metal elements are regarded as the main factors that control the adsorption behaviors in a natural system containing multicomponents at the acidic condition.

• Spatial Information Research
• /
• 제14권1호
• /
• pp.129-150
• /
• 2006

본 연구에서는 GIS 및 확률 기법을 이용하여 광상의 위치와 지질, 지화학 및 지구물리 자료들 간의 상관관계를 분석하고, 광상부존가능도(Mineral potential map) 작성 및 검증을 수행하였다. 연구지역은 1:25만 강릉도폭지역 a이며, 구축된 데이터베이스 자료는 1:25만 광상분포도, 지화학도, 지질도, 부우게 중력이상도, 자력이상도이다. 본 연구에 사용된 광상은 퇴적기원의 비금속광상(고령토, 도석, 규석, 운모, 연옥, 석회석, 납석)이다. 원소별 지화학도 작성은 채취된 각 시료 3,595개의 원소별 분석치를 이용하여 IDW 보간법으로 만들었다. 구축된 지화학도는 Al, Alkalinity, As, Ba, Ca, Cd, Co, Cr, Cu, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Si, Sr, V, W, Zn, $Cl^-,\;F^-,\;{NO_2}^-,\;{NO_3}^-,\;{PO_4}^{3-},\;{SO_4}^{2-}$, pH, Eh 및 Conductivity로 총 32개이다. 이러한 광상과 관련 요인들 간의 상관관계는 확률기법인 weight of evidence를 적용하여 계산하였고, 이를 바탕으로 광상부존가능도를 작성하였다. 광상부존가능도는 wieght of evidence의 W+와 W- 값을 GIS 중첩분석에 적용하여 작성하였다. 계산된 광상부존가능지수는 기존 광상부존가능성을 정량적으로 설명하고 표현하며 검증할 수 있는 값이다. 각 기법을 이용하여 작성한 광상부존가능도의 검증결과는 85.66%의 정확도를 나타내었다.