• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.59-62
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• 1998

Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.465-468
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• 1999

Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1029-1033
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• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.102-107
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• 1996

Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.321-328
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• 1987

The chemical durability of six alumino fluorophosphate glass samples studied. The composition of glass varied with MgF2 content from 0 to 12.5wt% in 30AlF3-2MgF2-(50-x)MF2-10P2O5(M; Sr, Ba). Samples were maintained in distilled water at 95$^{\circ}C$ from 1 to 100hrs. Weight loss, pH change and leached elements of the solution, and IR transmittance of samples were measured and also their surfaces were observed by SEM. Chemical durabilities of these samples were increased with increasing MgF2 contents. The following various properties were increased rapidly up to 10 hours after that changed slowly. The sample after leached at 95$^{\circ}C$ during 100 hrs showed 0.5mg/$\textrm{cm}^2$ in weight loss. The pH of leached solution is 6.2 and concentration of Mg, Sr, and Ba element of that leached solution were 24,115 and 125 ppm, respectively. The infrared transmittance of leached sample decreased 7% compare to unleached one. And also SEM photomicrograph and EDS analysis showed that the corrosion of samples were decreased with respect to increasing MgF2 content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.384-389
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• 2004

Crystal structure and microwave dielectric properties of Ba(Mg1/3Nb2/3) $O_3$ (BMN) ceramics were investigated. Ba(Mg1/3Nb2/3) $O_3$ has the 1:2 ordered hexagonal structure. The 1:2 ordering and relative density of specimens increased with small Mg deficiency(x). The variation of Q${\times}$ $f_{0}$ with Mg deficiency is very similar to that of 1:2 ordering and relative density. The highest Q${\times}$ $f_{0}$ achieved in this investigation is about 96,000 for Ba(Mg1/3Nb2/3) $O_3$. The improvement of Q${\times}$ $f_{0}$ with Mg-deficiency is related to the increase of degree of ordering and relative density of the specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.476-479
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• 2001

The microwave dielectric properties of $[(Pb_{1-x}Ba_{x})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were investigated. When $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were sintered at $1250^{\circ}C$ and $1350^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon_{r}=64\sim80$, $Q{\times}f=11,800\sim18,000$. As a result, $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ having $\varepsilon_{r}=80$, $Q{\times}f=11,800$ (at 4 GHz) was developed.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.364-367
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• 2018

The phase evolution, microstructure, and microwave dielectric properties of Sr-substituted $Ba(Mg_{0.5}W_{0.5})O_3$ ceramics, i.e., $(Ba_{1-x}Sr_x)(Mg_{0.5}W_{0.5})O_3$ ($0{\leq}x{\leq}0.30$), sintered at $1700^{\circ}C$ for 1 h were investigated. All compositions showed a 1 : 1 ordered perovskite structure. In all the compositions, $BaWO_4$ was detected as the secondary phase. With increasing x in ($Ba_{1-x}Sr_x$) $(Mg_{0.5}W_{0.5})O_3$, the lattice parameter increased linearly, indicating that a substitutional solid solution occurred. All compositions exhibited a dense microstructure. The value of ${\varepsilon}_r$ increased slightly with increasing x. The value of $Q{\times}f_0$ increased with the increase in x up to x = 0.10 and reached a saturated value of about 100,000 GHz. The composition for x = 0.20, i.e., $(Ba_{0.80}Sr_{0.20})(Mg_{0.5}W_{0.5})O_3$, sintered at $1700^{\circ}C$ for 1 h exhibited superior microwave dielectric properties of ${\varepsilon}_r=19.6$, $Q{\times}f_0=99,358GHz$, and ${\tau}_f=0.0ppm/^{\circ}C$, respectively.