• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.365-366
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• 2005

PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.223-228
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application at a temperature of less than $90^{\circ}C$, a $Ba(Ti_{1-x}Zr_x)O_3$ composition was fabricated using a conventional solid-state method. Electrocaloric properties of these ceramics were investigated using the characteristics of P-E hysteresis loops in a wide temperature range from room temperature to $150^{\circ}C$. The Curie temperature of $Ba(Ti_{1-x}Zr_x)O_3$ ceramics decreased with the increase of x. The maximum value of ${\Delta}T=0.07^{\circ}C$ in an ambient temperature of $85^{\circ}C$ under 30 kV/cm appeared when x = 0.125. It was concluded that the composition (x = 0.125) ceramics can be used for refrigeration device applications.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1436-1437
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• 2011

(1-x)(Na,K)$NbO_3$-xBa(Zr,Ti)$O_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The synthesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. We report the improved piezoelectric properties in the perovskite structure composed of the NKN and BZT ceramics. We investigated the effects of NKN, BZT on the structural and electrical properties of the NKN-BZT ceramics. The NKN-BZT ceramics show good performance with piezoelectric constant $d_{33}$=155pC/N. The results reveal that (1-x)(Na,K)$NbO_3$-xBa(Zr,Ti)$O_3$ ceramics are promising candidate materials for lead-free piezoelectric application.

• Journal of the Korean Ceramic Society
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• v.39 no.11
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• pp.1017-1022
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• 2002

$(Ba_{1-x}Ca_x)(Ti_{1-y}Zr_y)O_3(BCTZ)$ powders for the Ni-electrode Multilayer Ceramic Capacitor(MLCC) were synthesized via hydrothermal treatment using mixed aqueous solutions of $BaCl_2{\cdot}2H_2O,\Ca(NO_3)2{\cdot}4H_2O,\ ZrOCl_2{\cdot}8H_2O$ and $TiCl_4$. Two component and three component systems were also extensively studied for basic data. BT, CT and BZ powders were crystalline but CZ was determined to be amorphous under the same synthetic condition. In BTZ system, Zr and Ti were completely soluble and Ca would be substituted for Ba up to ∼6 mol% in BCT. The submicron-sized $(Ba_{0.95}Ca_{0.05})(Ti_{0.80}Zr_{0.20})O_3$ powder of the target composition was successfully synthesized at $150{\circ}$ for 12h.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.37-45
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• 2003

The dielectric and sintering characteristics of composites made by substituting Ca ion to Ba-site and Zr ion to Ti site in $(Ba{1-x}Ca_x)(Ti{0.96-yZr_ySn_{0.04})O_3$ $(0.15{\leq}x{\leq}0.20,\;0.09{\leq}y{\leq}0.14)$ were investigated. As the content of Ca was more than 15 mol%, composite was formed by precipitating the second phase whose main element was $CaTiO_3$ and the fraction of the second phase was increased. The curie temperature of composites was depended on Ca concentration, $-1.7^{\circ}C$ per mol% and the maximum dielectric constant of composite was decreased by the rate of 200/mol%. The substitution of Zr ion decreased the curie temperature by the rate of $10^{\circ}C$ per mol% and the maximum dielectric constant was decreased by 217/mol% due to the increase of diffuse phase transition. The density and insulation breakdown characteristics were improved by suppressing the abnormal grain growth due to the increase of second phase. We developed the composition of Y5U (EIA standard) condenser which had high breakdown voltage and dielectric constant by controlling diffuse phase transition by the addition of Zr ion into composite.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1023-1028
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• 1993

To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

• Nuclear Engineering and Technology
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• v.56 no.5
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• pp.1822-1829
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• 2024

The search for materials that serve as good shields for radiation has become very important in light of the increasing exposure to ionizing radiation in various vital sectors. The aim is to search for novel materials with better radiation shielding properties that are stable, nontoxic, and abundant and environment friendly. The solidstate reaction approach has been used to synthesize a few ceramics, including BaZr_XTi_1-XO₃, Ba_1-XLa_XTiO₃ and Ba_1-XLa_XZr_XTi_1-XO₃ (with x = 0.10) i.eBaZr_0.10Ti_0.90O₃ (BZT), Ba_0.90La_0.10TiO₃ (BLT), and Ba_0.90La_0.10Zr_0.10Ti_0.90O₃ (BLZT). The density of the prepared samples varies from 6.3471 to 11.6003 g/cm³. The X-ray diffraction technique, shows strong peaks to confirm the crystalline structure of prepared ceramic samples. Using the G-P fitting approach, the advanced radiation shielding parameters (build-up factor) have been evaluated in the photon energy region of 1.5 keV-15 MeV. It is observed from the results that exposure buildup factor (EBF) and energy absorption buildup factor (EABF) are maximum for BLZT and has the minimum value for BZT in the entire photon energy regime. The results of this work should be useful in radiation shielding applications such as in industry, medicine, and nuclear engineering.