• 한국세라믹학회지
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• 제41권11호
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• pp.842-850
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• 2004

BaO$_2$-TiO$_2$-환원제-입자제어제계에서 자전연소합성법을 이용한 BaTiO$_3$ 분말의 제조에 대하여 고찰하였다. 환원제로서 C, Mg를 사용하였고, 입자제어제로서 NaCl을 사용하였다. 자전연소합성법을 이용한 BaTiO$_3$ 분말의 제조에 있어 최적의 반응계에서 환원제의 종류와 농도, 입자제어제, 반응량의 변화에 따른 생성물의 영향을 조사하였다. 최적의 반응계 및 조성은 Ae반응 분위기에서 BaO$_2$+TiO$_2$+0.1Mg+0.2C+0.75NaCl이었다. 희석제로서 첨가된 NaCl은 연소온도의 조절 뿐 아니라 반응생성물의 입도를 제어하는 효과를 나타냄을 알 수 있었다. 최적의 조건에서 제조된 순수 BaTiO$_3$ 분말의 입도는 약 0.5 $mu extrm{m}$ 이하였으며, 반응량을 증가시킬수록 균일한 반응성을 나타내었다 제조된 BaTiO$_3$ 분말의 유전특성을 측정하기 위하여 130$0^{\circ}C$, 2시간동안 대기중에서 소결실험을 행하였고 이때 상온에서의 유전상수는 약 2290이었고, 큐리점(129$^{\circ}C$)에서의 유전상수는 약 13800을 나타내었다.

• 한국자기학회지
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• 제16권6호
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• pp.283-286
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• 2006

고밀도 자기기록용 Ba-페라이트/$SiO_{2}$ 자성박막에서 계면확산 장벽으로써 ${\alpha}-Al_{2}O_{3}$ 버퍼층의 역할을 연구하였다. 열처리동안 $1900{\AA}$의 두께를 가진 비정질 Ba-페라이트/$SiO_{2}$ 박막에서 계면확산은 약 $700^{\circ}C$에서 일어나기 시작하였다. 열처리온도를 $800^{\circ}C$까지 증가시켰을 때, 계면확산은 자기특성을 저하시킬 정도로 급격히 진행되었다. 고온에서의 계면확산을 억제하기 위하여, $110{\AA}$ 두께의 ${\alpha}-Al_{2}O_{3}$ 버퍼층을 Ba-페라이트/$SiO_{2}$ 박막의 계면에 증착하여 사용하였다. Ba-페라이트/${\alpha}-Al_{2}O_{3}/SiO_{2}$ 박막에서는 $800^{\circ}C$의 고온까지 열처리하여도 계면확산이 심각하게 일어나지는 않았다. ${\alpha}-Al_{2}O_{3}$ 버퍼층에 의하여 계면확산이 억제되기 때문에 Ba-페라이트 자성박막의 포화자속밀도와 보자력이 향상되었다. 따라서 Ba-페라이트/$SiO_{2}$ 박막의 계면에서 ${\alpha}-Al_{2}O_{3}$ 버퍼층은 $SiO_{2}$ 기판 성분의 계면확산 장벽으로 사용될 수 있다.

• 한국세라믹학회지
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• 제28권11호
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• pp.897-907
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• 1991

This study was conducted to research the formation and the color development of CoO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing CoO-ZnO-Fe2O3, in which CoO causes the color, as a basic composition, $\chi$CoO.(1-$\chi$)ZnO.Fe2O3 system, $\chi$CoO.(1-$\chi$)ZnO.TiO2 system and $\chi$CoO.(1-$\chi$)ZnO.SnO2 system were prepared with $\chi$=0, 0.2, 0.5, 0.7, 1.0 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 90 minutes. These specimens were analyzed by the reflectance measurement and the X-ray diffraction analysis and the results were summarized as follows: 1. All of the specimens formed the spinel structure and were colored with stable yellow or blue. 2. As the content of CoO and Fe2O3 in the specimens being increased, the reflectance of each specimen was measured becoming lower and the colors were changed from yellow to greyish blue and from blue to dark blue. 3. As the substituting amount of Co2+ ion for Zn2+ ion in $\chi$CoO-ZnO-TiO2-SnO2 system being increased, the colors were changed from blue to greyish blue. The colors were changed from yellow to grayish green owing to the tetrahedral Co2+ ions being increased, the octahedral Co2+ ions being decreased with increasing the amount of Sn4+ ions. 4. CoO-ZnO-Fe2O3-TiO2-SnO2 system, in which Zn2+ was substituted with Co2+ and Fe3+ was substituted with Ti4+ and Sn4+, easily formed the spinel structure without regard to the amount of substitution or the ion owing to the selectivity of the coordination number: 4 of Zn2+, 4 of Co2+, 6 of Fe3+ or 6 of Ti4+ and Sn4+.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.543-544
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• 2006

The effect of the additives, $Y_2O_3$ and MgO, on the sintering and properties of $Al_2O_3-TiC$ composites was investigated. It is known that MgO is used as additive for improving densification and $Y_2O_3$ is applied as sintering aid. In this study, the amounts of TiC were varied in the range of 30-47 wt%. The 0.5 wt% MgO and also varied amounts of $Y_2O_3$ from 0.3 to 1 wt% were added into the composites. The sintering of $Al_2O_3-TiC$ composites was performed in a graphite-heating element furnace at different sintering temperature, 1700 and $1900\;^{\circ}C$, for 2 hr under an argon atmosphere. The results demonstrated that the properties of the composites sintered at $1700\;^{\circ}C$ were much better than those sintered at $1900\;^{\circ}C$. The comparisons on physical properties, mechanical properties and microstructure of composites with and without additives were reported. Comparing with other samples, $Al_2O_3-30wt%TiC$ composites with 0.5wt% MgO and $1\;wt%Y_2O_3$ exhibited the highest density of approximately 98% of theoretical and flexural strength of 302 MPa.

• 연구논문집
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• 통권26호
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• pp.103-112
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• 1996

$Al_2O_3/SiC$ Hybrid-Composite이 일반적인 분말공정에 의하여 제조되었다. 소결시 $\gamma-Al_2O_3에서 $\alpha-Al_2O_3$로의 전이에 seed역할을 하는 $\alpha-Al_2O_3의 첨가는 균일한 미세구조를 발달시켜 강도의 증진을 가져왔다. nano size의 SiC의 첨가는 $Al_2O_3$의 소결성과 입성장에 영향을 미쳐 파괴강도의 증진을 가져왔다. $Al_2O_3/SiC$ nano-Composite에 SiC plates의 첨가는 파괴강도의 감소를 가져왔지만, 상대적으로 파괴인성은 증진되었다. SiC plates에 nitride (BN, $Si_3N_4$ 코팅을 할 경우 crack deflection을 더욱 유발하여 파괴인성이 증진되었다.

• 한국세라믹학회지
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• 제18권2호
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• pp.112-118
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• 1981

A study was made on the processing of domestic blast furnace slag by flotation and chemical purification for the use of slag as a raw material in making soda lime glasses. Feasibility study has been made for the use of reprocessing slag as a source material for both coloring and chemical components (such as CaO, $Al_2O_3$, MgO and etc.) in the glass making process. Chemical composition of chemically purified slags ranges; $SiO_2$ 34.5~37.5, $Al_2O_3$, 16.2~14.1, $Fe_2O_3$ 0.33~0.14, CaO 34.5~38.8, MgO 4.0~5.2, NmO 0.16~0.39, $TiO_2$ 0.23~0.35, S 0.08~0.42, ignition loss 3.3~8.4 and others 0.48~0.51%. It was found that either amber or greenish color could be easily obtained with the addition of salg up to 24%, however the slag addition to glass batches much impaired the transmitancy of glass products, thus a glass made with 7% slag addition showed 82% in transmitancy value at 510 nm.

• 한국세라믹학회지
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• 제29권9호
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• pp.719-728
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• 1992

ZrO2/Al2O3-Mullite composites were prepared by infiltration of the silica sol to the porous ZrO2/Al2O3 bodies. The porous ZrO2/Al2O3 bodies for infiltration were fabricated using ZrO2 (20wt%)/Al2O3 composite powders synthesized by the emulsion-hot kerosene drying method. The preparation of silica sols was conducted by the hydrolysis-peptization of an alcoholic TEOS solution. When ZrO2/Al2O3-Mullite and ZrO2/Al2O3 composites were sintered at 1$650^{\circ}C$ for 4 hrs, both of them showed an excellent sinterability. As the amount of mullite added in the composites increased, the ratio of the tetragonal phase of zirconia to the monoclinic phase at the room temperature became higher. It was known that values of the fracture toughness of the ZrO2/Al2O3-Mullite composites were about 5.48 MPa.m1/2 much larger than that of the ZrO2/Al2O3 system.

• 한국세라믹학회지
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• 제28권4호
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.402-410
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• 2000

The electrical properties and stability of Pr$_{6}$/O$_{11}$-based ZnO wvaristors consisting of ZnO-Pr$_{6}$/O$_{11}$-CoO-Dy$_{2}$/O$_{3}$ based ceramics were investigated in the Dy$_{2}$/O$_{3}$ additive content range o 0.0 to 2.0 mol%. The density was nearly constant 5.62 g/cm$^3$corresponding to 97% of theoretical density as Dy$_{2}$/O$_{3}$ additive content increases up to 0.5 mol%. However the density decreased as Dy$_{2}$/O sub 3/ additive content is further additive content. Pr$_{6}$/O$_{11}$-based ZnO varistors doped with 0.5mol% Dy$_{2}$/O$_{3}$ exhibited a good nonlinearity, which is 37.76 in the nonlinear exponent and 5.36 $mutextrm{A}$ in the leakage current. And they exhibited very stress (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h). Consequently it was estimated that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Dy$_{2}$/O$_{3}$ based ceramics will be sufficiently used as a basic composition to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors in the future.he future.uture.he future.