• Journal of Magnetics
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• 제9권1호
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• 한국세라믹학회지
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• 제22권2호
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• pp.17-24
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• 1985

In the composition of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ the effect of particle size on PbO vaporization were measured, . The initial step of discontinuous vaporization of unreated PbO during the calcining process was depended on the particle size. All additives $La_2O_3Nb_2O_5$ and $Al_2O_3$ inhibited the grain growth of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ +2wt% excess PbO. The dielectric and piezoelectric properties of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ were improved by the addition of 2wt% excess PbO and proper additive. The electromechanical planar coupling factor of 0.65 and mechnical quality factor of 390 could be obtained by adding 5wt% $Nb_2O_5$ to the composition 2wt% excess PbO+$Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2683-2689
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• 2024

This work investigated the most suitable type of degrader (Cu, Al or Nb) and its thickness, taking into consideration the salient aspects of concrete activation for high-purity ⁸⁹Zr production by ⁸⁹Y(p,n)⁸⁹Zr nuclear reaction. The MCNP and FISPACT codes were used to determine the optimal degrader thickness and the radioactivity of shielding concrete by neutron activation, respectively. The results showed that the optimal thickness of the beam degraders was 1.16, 3.19, and 1.33 mm for Cu, Al, and Nb, respectively. The neutron production rate per proton and the energy and angular distributions of neutrons varied depending on the type of degrader. Considering the radioactivity of the target-room concrete and the amount of radioactive waste expected to be generated, the use of a 1.33-mm-thick Nb degrader for ⁸⁹Zr production was determined to be the best choice.

• Progress in Superconductivity
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• 제4권1호
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• pp.37-41
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• 2002

In this work. we have designed two different kinds of Rapid Single Flux Quantum (RSFQ) OR-gates. One was based on the already developed RSFQ cells and the other was aimed to develop a more compact version. In the first circuit, we used a combination of two D Flip-Flops and a merger and in the other circuit we used a combination of RS Flip-Flops and Confluence Buffer. We tested the circuit performance by using the simulation tools, Xic and Wrspice. We obtained the operation margins of the circuit elements by a margin calculation program, and we obtained the minimum operation margins of $\pm$30%. The circuits were laid out, aimed to fabricate by using the existing KRISS Nb process. KRISS Nb process includes the $Nb／Al_2$$O_3$／Nb trilayer fabricated by DC magnetron sputtering and the reactive ion etching technique for the definition of the features. The major tools used in the layouts were Xic and L-meter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.108-108
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• 2005

• 대한전자공학회논문지
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• 제26권10호
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• pp.1584-1590
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• 1989

In this study, a planar waveguide has been fabricated on a Y-cut LiNbO3 substrate by the Ti indiffusion technique and its guiding characteristics are measured by bright M-line spectroscopy. Using the photolithography method, an electro-optic grating modulator with interdigital electrodes has been fabricated by depositing Al on the Ti:LiNbO3 planar waveguide. And the beam intensity diffracted by the grating is measured as the applied voltage is increased.

• 한국초전도ㆍ저온공학회논문지
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• 제2권2호
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• pp.1-5
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• 2000

There is the possibility that internal tin processed Nb$_3Sn$ wires are locally heated during the drawing process and the jacketing process. It is important to know the variations in J$_c$ of internal tin processed Nb$_3Sn$ wires caused by local heating. Internal tin processed Nb$_3Sn$ rods were cold worked to 2.28 mm, using the appropriate reduction ratio, and then cut into several pieces. At this stage, wires were locally 50 mm heat zone heated up to 360$^{\circ}C$. The locally heated Nb$_3Sn$ wires were drawn to a final diameter size of 0.81 mm. Others were cold worked successively to 0.81 mm and locally heated with the same conditions. 2 types of locally heat treated wires were wound on Ti-6Al-4V barrels and heat treated for the Nb$_3Sn$ reaction. Local heating of internal tin processed Nb$_3Sn$ wires after the J$_c$ of these wires. However, local heating at an intermediate stage of the drawing process caused a decrease in J$_c$. When the local heating temperatures were higher than melting point of Sn, non-Cu J$_c$'s decreased significantly. A Sn-Cu alloyed boundary appeared after local heating over the melting point of Sn, and caused work hardening and a decrease in the workability.

• Corrosion Science and Technology
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• 제7권4호
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 1995년도 제26차 추계학술대회
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• pp.29-30
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• 1995