• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1138-1146
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• 1996

Al2TiO5 powder was prepared by the sol-gel processing from th metal alkoxides ; aluminium sec-butoxide (Al(OC4H9)3 and tetraethyl orthotitanate (Ti(OC2H5)4) The particles of Al2TiO5 produced from alkoxides were measured to be below $1.5mutextrm{m}$ and mre than 90% weere below 1 ${\mu}{\textrm}{m}$ however those from commercial alumina and titania were over 0.5-7${\mu}{\textrm}{m}$ and only 60% were below 1${\mu}{\textrm}{m}$ and 90% were below 2.5${\mu}{\textrm}{m}$ Therefore Al2TiO5 powder produced from alkoxides had the narrower distributionin size than that produced from the commercial alumina and titania powders. The addition of mullite or Al2O3 powder to the prepared aluminum titanate inhibited the grain growth and this resulted in decreased and increase in density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.115-122
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• 1993

Transparent Al2O3 and TiO2 clear sols prepared by hydrolysis and subsequent peptization were mixed into wet gel. EDS analysis for this gel showed that wet gel was extremely homogeneous in chemical composition. Calcination of the wet gel at 120$0^{\circ}C$ for 50 minutes resulted in Al2O3-TiO2 nanocomposite powders where TiO2 particles of 101~102 nanometer were dispersed in the Al2O3 matrix. Both powders were sintered for 4 hours in the temperature range over 1500~1$650^{\circ}C$ with and without 5wt% MgO sintering aid. Among these sintered bodies, nanocomposite powder compacts sintered at 1$650^{\circ}C$ for 4 hours with 5wt% MgO showed the most dense structure with the grain size under 5${\mu}{\textrm}{m}$ and highest relative density of 98.2%.

• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.565-569
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• 2011

Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high-energy ball milling. The fast sintering of nanostructured $Al_2O_3-MgSiO_3-SiO_2$ composites was investigated from mechanically activated powders of MgO, $Al_2O_3$ and $SiO_2$ by a pulsed-current activated sintering process. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties; in particular greater strength, hardness, excellent ductility and toughness. Highly dense nanostructured $Al_2O_3- MgSiO_3-SiO_2$ composites were produced with simultaneous application of 80 MPa and pulsed output current of 2800A within 2 minutes. The sintering behavior, grain size and mechanical properties of $Al_2O_3-MgSiO_3-SiO_2$ composites were investigated.

• Clean Technology
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• v.15 no.4
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• pp.273-279
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• 2009

$SF_6$, which has a high global warming potential, can be decomposed to sulfur and fluorine compounds through hydrolysis by $H_2O$ or oxidation by $O_2$ over solid acid catalysts. In this study ${\gamma}-Al_2O_3$ was employed as the solid acid catalyst for the abatement of $SF_6$ and its catalytic activity was investigated with respect to the reaction temperature and the space velocity. The catalytic activity for $SF_6$ decomposition by the hydrolysis reached the maximum at and above 973 K with the space velocity of $20,000\;ml/g_{-cat}{\cdot}h$, exhibiting a conversion very close to 100%. When the space velocity was lower than $45,000\;ml/g_{-cat}{\cdot}h$, the conversion was maintained at the maximum value. On the other hand, the conversion of $SF_6$ by the oxidation was about 20% under the same conditions. The SEM and XRD analyses revealed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ during the hydrolysis and to $AlF_3$ during the oxidation, respectively. The size of $AlF_3$ after the oxidation was over $20\;{\mu}m$, and its catalytic activity was low due to the low surface area. Therefore, it was concluded that the hydrolysis over ${\gamma}-Al_2O_3$ was much more favorable than the oxidation for the catalytic decomposition of $SF_6$.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.827-831
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• 2008

Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.159-165
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• 1994

Two kinds of humidity sensor are made, one by anodizing pure aluminum and the other by evaporation Sn02 on the anodized pure alumia film, and their electrical characteristics are investigated in various humidity atmosphere. The change of surface resistance with humidity of $AI_2O_3/AI$ and $SnO_2-AI_2O_3/Al$ sensors are found to be $1.40 \times 10^{-2}\Omega$/RH and $1.56 \times 10^{-2}\Omega$/RH, respectively. The hysteresis phenomena associated with the irreversibility of surface resistance-humidity is less in $SnO_2-AI_2O_3/Al$ sensor than in $AI_2O_3/AI$. It is concluded that $SnO_2-AI_2O_3/Al$ film can be used as humidity sensor in room temperature region because temperature dependence of surface resistance of the film is found to be as $0.56 \times 10^{-2} \Omega /^{\circ}C$ in O~ $20^{\circ}C$ range, where as $2.50 \times 10^{-2} \Omega /^{\circ}C$ in 40-$50^{\circ}C$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.313-318
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• 2001

The sliding wear behavior of Plasma-Sprayed Al$_2$O$_3$-TiO$_2$ Coating against Cemented Carbide were Investigated using a pin on disk type tester. The experiment was conducted using Al$_2$O$_3$-TiO$_2$ Coaling as pin material and Cemented Carbide as disk material and different operating conditions, at room temperature under a dry conditions. The results showed that the type B(250kw power) appeared average wear rate Is lowed than type A(80kw power). The specific wear rate of Specimen A1 Increased with normal load. But The specific wear rate of Specimen B1 decreased with normal load. Average wear rate of specimen A3, B3 are lowed than other but the sliding wear mechanism of edge were rough.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.933-938
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• 2004

The clinkerbility and the behaviour of formation of $3CaO{\cdot}Al_{2}O_3$ were studied using the mixture of waste oyster shell and spent oil-refining catalyst mainly by the mineral and microstructural observation. By virtue of the formation of $12CaO{\cdot}7Al_{2}O_3$ at relatively low temperature and its successive reaction with CaO, the $3CaO{\cdot}Al_{2}O_3$ clinkers were formed easily without affection of minor constituents contained in oyster shell. Thus clinkers were formed at $1400^{\circ}C$ directly but began to melt incongruently at higher temperature above that. Aluminium hydroxide, however, was not desirable as an aluminous raw materials of the clinker because rapid melting occurs before $3CaO{\cdot}Al_{2}O_3$ forms main clinker mineral.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.