• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.493-497
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• 1998

The synthesis of $Sr_{1-x}Eu_xAl_2O_4$ (x=0.005~0.2;mol%) phosphors and its properties of both photoluminescence and long-phosphorescent were investigated as a function of $Eu_2O_3$ composition. The peak wavelengths (520 nm) of phosphorescence spectra were found not to vary with the $Eu_2O_3$ composition (x) of $Sr_{1-x}Eu_xAl_2O_4$ crystals. Single phase of $SrAl_2O_4$ which determined by XRD and PL was obtained with the compositions of x<0.05 mol%. After the removal of light excitation (360 nm), the excellent after-glow characteristics of the phosphorescence were obtained with the $Eu_2O_3$ compositions of x<0.05 mol%, although the after-glow intensities for all phosphors vary exponentially with the times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.387-390
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• 2000

The $Al_2$O$_3$specimens were prepared by the conventional mixed oxide method with addition La$_2$O$_3$, Bi$_2$O$_3$. The specimens were sintered at 15$25^{\circ}C$, 5hr., in air. The structural properties of the specimens were investigated by XRD and SEM. The $Al_2$O$_3$ceramics with dopants had hexagonal structure and didn't show secondary phases. In the case of specimens with 0.25wt% La$_2$O$_3$and 0.25wt% Bi$_2$O$_3$bulk densities and lattice parameter of c/a were 3.818g/cm$^3$, 3.783g/cm$^3$and ca=2.725, c/a=2.723, respectively. The bulk densities of $Al_2$O$_3$ceramics were decreased with dopants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Ceramic Society
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• v.47 no.2
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• pp.122-126
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• 2010

In this article photoluminescence of the $Al_2O_3:xCr_2O_3$ solid solutions prepared by solid state reaction method are represented. The effect of $Cr_2O_3$-activator concentration and heat treatment time on the PL characteristics have been discussed in conjunction with microstructure of phosphor samples. The $Al_2O_3:xCr_2O_3$ phosphors show the highest PL intensity at x=0.003 mole when the samples are reacted at $1600^{\circ}C$ for 5 h. The PL emission and absorption spectra show the maximum peaks at 698 nm and at 398 nm respectively. The CIE color coordinate is (x=0.646, y=0.316) at 0.003 mole $Cr_2O_3$, which value is very close to the NTSC coordinate of red color. This characteristic feature of $Al_2O_3:xCr_2O_3$ has been applied for an additive to improve the color characteristic of other red phosphor $LiEuW_2O_8$ which has a relatively poor color purity with an emission peak centered at 615 nm and with a CIE coordinate (x=0.530, y=0.280). The $Al_2O_3:0.003Cr_2O_3$ phosphor has been mixed with the $LiEuW_2O_8$ phosphor powder and the PL characteristics and CIE color coordinates are characterized. The $Al_2O_3:xCr_2O_3$ phosphor was found effective for improving the CRI (color rendering index) of $LiEuW_2O_8$ phosphor.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.473-478
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• 2002

${\alpha}-Al_2O_3$ platelets were synthesized by microwave heating the two different powder mixtures of $Al_2(SO_4)_3+2Na_2SO_4$ and ${\gamma}-Al_2O_3+2Na_2SO_4$ using flux method. DTA-TG, XRD and SEM were used to investigate the effect of microwave on the formation of ${\alpha}-Al_2O_3$ platelets. In the case of the mixture of $Al_2(SO_4)_3+2Na_2SO_4$, the microwave heated sample was ${\alpha}-Al_2O_3$ platelets composed of aggregates with smaller particle size compared to the conventionally heated sample. In the case of the mixture of ${\gamma}-Al_2O_3+2Na_2SO_4$, the temperature to form ${\alpha}-Al_2O_3$ platelets by the microwave heating was lower than that by the conventional heating and the morphology of the microwave heated sample was similar to that of the conventionally heated sample except that the microwave heated sample had smaller particle size compared to the conventionally heated sample.

• Journal of Welding and Joining
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• v.10 no.4
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• pp.213-221
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• 1992

Al$_{2}$O$_{3}$ ceramic coating layer by gas flame spraying was very porous, therefore it could not have wear and corrosion resistance at all. To get a dense and strong coating layer, a method to infiltrate an alloy into the pores of $Al_{2}$O$_{3}$ ceramic coating was investigated. Cu-Ti alloys, which had good wettability and reactivity with $Al_{2}$O$_{3}$ ceramic, were examined for infiltration. Infiltration of the alloys was performed in vacuum at 1100.deg.C. The melt of Cu-50 at % Ti alloy was well penetrated through the porous $Al_{2}$O$_{3}$ coating and tightly sealed the pores, unbounded area and microcracks in the coating. The alloy melt in the pores reacted with $Al_{2}$O$_{3}$ ceramic to produce a suboxide phase, Cu$_{2}$Ti$_{4}$O. This composite layer which was composed of $Al_{2}$O$_{3}$ and Cu$_{2}$Ti$_{4}$O phase had good microstructure and wear and corrosion resistance. Additionally, microstructures at interfaces between coating layers were greatly improved owing to the effect of vacuum heat treating.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.574-579
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• 2013

The milling and particulate characteristics of Al alloy-$Al_2O_3$ powder mixtures for a reaction-bonded $Al_2O_3$ (RBAO) process were studied. A commercially available prealloyed Al powder with Zn, Mg, Cu and Cr alloying elements (7475 series) was mixed with a calcined sinter-active $Al_2O_3$ powder and then milled in centrifugal milling equipment for ~48 hrs. The Al alloy-$Al_2O_3$ powder mixtures after milling were characterized and evaluated in various ways to reveal their particulate characteristics during milling. The milling efficiency of the Al alloy increased with a longer milling time. Comminution of the Al alloy particles started with its elongation, showing a high aspect ratio. With a longer milling time, the elongated Al alloy particle changed in terms of its shape and size, becoming equiaxially fine particles. Regardless of the milling efficiency of the Al alloy particles, all of the Al alloy particles repeatedly experienced strong plastic deformation during milling, giving rise to higher density of surface defects, such as microcracks, and leading to higher residual microstress within the Al alloy particles. The chemical reactions, oxidation behavior and hydration behavior of the Al alloy particles and the hydrolysis characteristics of their reaction with the environment were also observed during the milling process and during the subsequent powder handling steps.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.629-635
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• 1997

The effects of the annealing atmospheres(O2, N2) and sintering additives that Bi2O3 is a major composition on the microwave dielectric and sintering propertie of (1-x)CaTiO3-xLaAlO3 system were investigated. The annealing atmospheres and the increase of annealing time after sintering did not affect the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) of (1-x)CaTiO3-xLaAlO3 system. However, the Q.f0 values of (1-x)CaTiO3-xLaAlO3 were very sensitive to annealing atmospheres. As the annealing time increased under O2 atmosphere the Q.f0 values of (1-x)CaTiO3-xLaAlO3 enhanced untill 10 hrs in 0.3$\leq$x$\leq$0.6 region, but degraded over that time. The increasing rate of Q.f0 value increased wth increasing x. On the other hand, as the annealing time increased under N2 atmosphere the Q.f0 values were constant in x$\leq$0.6 region, increased gradually in x$\geq$0.7 region. When 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% as sintering additives were added to (Ca0.5La0.5) (Ti0.5Al0.5)O3 (x=0.5) the sintering temperature of 1$600^{\circ}C$ was lowered to 140$0^{\circ}C$, and the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) were not nearly changed. The addition of 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% to (Ca0.5La0.5)(Ti0.5Al0.5)O3 made the Q.f0 values to be lower about 15% and 34%, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.411-418
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• 2000

$Al_2O_3$ thin films of 300 nm thickness were deposited at room temperature using DC reactive sputtering with variation of the $O_2$ content in the sputtering gas from 30% to 70%. Regardless of the $O_2$ content in the sputtering gas, the sputtered $Al_2O_3$ films were amorphous and exhibited the refractive index of 1.58. When the $O_2$ content in the sputtering gas was higher than 50%, the $Al_2O_3$ films exhibited excellent transmittance of about 98% at 550 nm wavelength. However, the transmittance decreased to about 94% for the $Al_2O_3$ films deposited with the sputtering gas of the 30% and 40% $O_2$contents. The optimum dielectric properties (dielectric constant of 10.9 and loss tangent of 0.01) was obtained for the $Al_2O_3$ film deposited with the sputtering gas of the 50% $O_2$ content. When the $O_2$ content in the sputtering gas was within 40% to 60%, the $Al_2O_3$ films exhibited no shift of flatband voltage $V_{FB}$ in C-V curves and exhibited leakage current density lower than $10^{-5}\textrm{A/cm}^2$ at 150 kV/cm.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.331-340
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• 1995

Microwave (Hybrid) Heating (MHH) was used to oxidize and sinter Al-Al2O3 powder mixture. For 25 v/o Al specimen and 35 v/o Al specimen, the total processing to produce low-shrinkage reaction bonded alumina was carried out within 1 hour even though conventional furnace process took more than 10 hours. Compared with conventional fast firing process, MHH process increased more than 40% oxidation at the same temperature, and these high oxidation rates were thought to be caused by the surface ohmic current on Al particles.