• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.455-456
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• 2006

We have demonstrated that textured $Al_2O_3-mullite-SiC$ nanocomposites can be fabricated by slip casting followed by partial oxidation. reaction sintering of mixed suspensions of $Al_2O_3$ and SiC powders in a high magnetic field. The sintered density was changed by the degree of oxidation at 1200C and 1300C. The degree of orientation of alumina in the nanocomposite was examined on the basis of the X-ray diffraction patterns and scanning electron micrographs. It is confirmed that aluminaoriented nanocomposites were fabricated. The three-point bending strength at room temperature was observed for the nanocomposites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.161-161
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• 2012

결정질 TiCrN과 AlSiN 나노층이 교대로 구성하는 나노 다층 TiAlCrSiN 박막은 음극 아크 플라즈마 증착법에 의해 증착되었다. 나노 다층 TiAlCrSiN 박막의 산화특성들은 $600{\sim}1000^{\circ}C$사이에서 대기 중 최대 70시간동안 연구 되었다. 형성된 산화물들은 주로 $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$ 그리고 rutile-$TiO_2$들로 구성되었다. 나노 다층 TiAlCrSiN 박막이 산화하는 동안, 가장 바깥쪽의 $TiO_2$층은 Ti 이온의 외부확산에 의해, 외부 $Al_2O_3$층은 Al이온의 외부확산에 의해 형성되었다. 동시에, 내부($Al_2O_3$, $Cr_2O_3$) 혼합층과 가장 안쪽의 $TiO_2$층은 산소이온의 내부확산에 의해 형성되었다.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.3-10
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• 1985

In the study the characteristics change of crystallized $Li_2O$.$Al_2O_3$.$SiO_2$ glass-ceramics when varying RO ratio and increasing Al2O3 were investigated to produce a glass-ceramics with high mechanical strength and low thermal expansion. Parent glass was obtained by melting at 1,350~1,40$0^{\circ}C$ for 3 hours and annealing at 45$0^{\circ}C$ and the various physical characteristics were measured. Results were as follows; 1. When ZnO was replaced by MgO thermal expansion coefficient was lowered when increasing ZnO content. 2. Major crystal phase was $\beta$-spodumene the crystal growth mophology was the three dimensional sphere and the activation energy for crystallization was 54.6 Kcal/mol. 3. Parent glass heat-treated at 95$0^{\circ}C$ for 10 hours had ; a) thermal expansion coeff. of $23.2{\times}10^{-7}$/$^{\circ}C$ b)whiteness of 76 c) microhardness of 1,089kg/$mm^2$

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.42-44
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• 2003

최근 logic 소자의 gate oxide로 기존의 $SiO_2$, SiON보다 고유전, 작은 누설전류를 가지는 물질의 개발이 중요한 이슈가 되고 있다. 본 실험실에서는 Si 기판위에 $HfO_2$ 를 바로 증착하는 경우, 기판의 Si 이박막내로 확산하여 유전율이 저하되는 문제점을 인식하고, 기판과 $HfO_2$ 사이에 $AlO_x$를 방지막으로 사용하였다. 이 때, $AlO_x$의 Al precursor 는 TMA 로 고정하고, 산화제로는 $H_2O, O_2$-plasma, O_3$ 를 각각 사용하였다. 모든 $AlO_x/HfO_y$ 박막에서 매우 우수한 누설전류특성을 얻을 수 있었는데, 특히 $O_3$ 를 산화제로 사용한 $AlO_x$ 방지막의 경우 가장 우수한 특성을 보였다. 또한 질소 분위기에서 $800^{\circ}C$ 10 분간 열처리한 후, 방지막을 사용한 모든 경우에서 보다 향상된 열적 안정성을 관찰할 수 있었다.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.296-302
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• 1997

The effect of cold cyclic compaction on densification of SiC whisker/Al2O3 composite was investigated. Re-lative density of the compact increased as the number of cycle and the compaction pressure increased and the bias pressure decreased. The rate of loading and unloading and the frequency of cold cyclic compaction did not affect much on sliding and rearrangement of the particles. Fracture of SiC whisker was hardly ob-served during cold cyclic compaction and the direction of whisker was randomly oriented throughout the compact regardless of the direction of compaction. Thus, cold cyclic compaction may be an efficient method to densify SiC whisker/Al2O3 composite.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.759-766
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• 1994

The effect of additives on properties of unfired Al2O3-C bricks were investigated. The increase of carbon content and the addition of MgO or spinel improved the resistances against spalling and corrosion of unfired Al2O3-C bricks. Also, the oxidation resistance of unfired Al2O3-C brick was increased by adopting complex metals of Al and Si in spite of the increase of carbon content.