• Journal of Ceramic Processing Research
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• v.21
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• pp.16-22
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• 2020

We fabricated SiC-TiC composites by hot-press sintering with aluminum and yttrium nitrate additive and evaluated crystal phase, relative density, microstructure, electrical resistivity and mechanical properties of the sintered body. And the effect of nitrate additive on the densification of SiC-TiC composites was compared with that of Al₂O₃ and Y₂O₃ additives. Because nitrate additives were uniformly dispersed in SiC and TiC mixture, it inhibited the growth of crystal grain between each other and formed fine and uniform microstructure, thereby improving mechanical properties and electrical resistivity. The electrical resistivity and flexural strength of the SiC-TiC composite with aluminum and yttrium nitrate additive were 2.3 Ω·cm and 652.3 MPa respectively.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.361-365
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• 1984

This study has been carried out to sinter silicon nitride with additives and to show the effect of surface finishments on its strength and Weibull modulus which are two most important factors for its applications into structural ceramics. Silicon nitride was sintered with the additions of $Al_2O_3$ and $Y_2O_3$ under pressureless cond-ition. The optimum properties were obtained by sintering at 1, 75$0^{\circ}C$ for 3hrs under $N_2$ atmosphere and the strength showed 6, 500kg/$cm^2$ at room temperature and 3, 300kg/$cm^2$ at 120$0^{\circ}C$. The effects of surface treatment on the strength of sintered $Si_3N_4$ were studied and the results showed that fine surface treatment increased the strength by up to 50% The Weibull analysis showed that its modulus was increased with increasing fineness of surface finishments. It was concluded that the mechanical properties of sintered silicon nitride could be improved by fine surface grinding which implied the brittle-fracture nature of sintered silicon nitride.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1289-1290
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• 2007

The composites were fabricated 61Vo.% ${\beta}$-SiC and 39Vol.% $TiB_2$ powders with the liquid forming additives of 12wt% $Al_{2}O_{3}+Y_{2}O_{3}$ as a sintering aid by pressure or pressureless annealing at $1650^{\circ}C$ for 4 hours. The present study investigated the influence of annealed sintering on the microstructure and mechanical of SiC-$TiB_2$ electroconductmive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ YAG($Al_{5}Y_{3}O_{12}$). The relative density, the flexural strength, the Young's modulus showed the highest value of 86.69[%], 136.43[MPa], 52.82[GPa] for pressure annealed SiC-$TiB_2$ ceramic composites.

• The Journal of Engineering Research
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• v.3 no.1
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• pp.215-222
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• 1998

The effect of La and Si addition of the thermal stabilization of $\gamma-alumina$ powers have been studied. Reagent grade $La(NO_3)_3{\cdot}6H_2O$ and $Si(OC_2H_5)_4$ were used as starting materials. These additives were introduced by wet impregnation method. Both La and Si additives suppressed the sintering of alumina and were found to be good thermal stabilizers of $\gamma-alumina$. Especially, Si drastically suppressed the phase transition of alumina at high temperatures. The major mechanisms for the thermal stabilization of alumina were seemed to be new phase formation and retardation of surface diffusion by addition of La or Si into alumina matrix.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1057-1060
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• 2001

By comparison of the experimental results in two systems of ZnO varistors, its appear that Sb$_2$O$_3$is the indispensable element for twinning in ZnO varistors, and the Zn$_{7}$Sb$_2$O$_{12}$ spinel acts as the nucleus to form twins. A1$_2$O$_3$is not the origin of twinning in ZnO varistor, but it was found that A1$_2$O$_3$could strengthen the twinning and form a deformation twinning by ZnA$_{12}$O$_4$-dragging and pinning effect. The inhibition ratios of grain growth and nonuniformity of two systems ZnO varistors increase with the increase of A1$_2$O$_3$content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as : twins increase the mobility viscosity of ZnO grain and grain boundary, and drag ZnO grain and liquid grain boundary during the sintering, then the grain growth is inhibited, and the microstructure becomes more uniform.orm.m.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.299-307
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• 2002

In this proposed study, a new emerging shape forming technique Direct Coagulation Casting(DCC) which enables to fabricate complex-shaped ceramic parts has been investigated using colloid surface chemistry. Various process variables affected by dispersant, coagulation agent and sintering additives, have been evaluated in order to achieve highly concentrated stabilized silicon nitride suspensions. A high solid loading of 51 vol% in the dispersed silicon nitride suspension was prepared with 1.0wt% Tetraethylammonium Hydroxide (TEAH), which obtained a stable silicon nitride suspension with sintering additives $(Al_2O_3\;and\;Y_2O_3)$ in alkaline regions. The addition of hydroxyaluminium diacetate into the suspension, which decomposed at elevated temperatures, led to coagulate of a silicon nitride suspension. In a basic medium, aluminum ions precipitated to aluminum hydroxide $(Al(OH)_3)$, leading to decreased $OH^-$ concentration and, thus, coagulated suspension.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.672-677
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• 2005

In this study we prepared the Sr-ferrite powders and magnet by a molten salt method using the (NaCl+KCl) salt mixture. Starting materials of $Fe_{2}$$O_{3}$ and Sr$Co_{3}$ were mixed as the molar ratio of 5.70:1, and 0.08 mol$ \% $ $Al_{2}$$O_{3}$, 0.10 mo1$ \% $ Si$O_{2}$ and 0.12 mo1$ \% $ CaO were added as additives. Sr-ferrite powders synthesized at the reaction temperatures of 800$\∼$1200$ ^{\circ}C $ showed the typical M-type hexagonal ferrite phase, and hexagonal plate-like morphology with uniform distribution of 1$\∼$3 $\mu$m particle size. The bulk density of the sintered Sr-ferrite magnet prepared with powders by the molten salt method showed the maximum density of 4.82 g/$cm^{3}$ at the sintering temperature of 1200$^{\circ}C $. The maxima of remanent flux density (Br, 45 emu/g) and coercive force (iHc, 3.75 kOe) occurred at the sintering temperatures of 1150$ ^{\circ}C$ and 1200$^{\circ}C $.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.935-941
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• 1992

The LAS system with good thermal properties has a narrow range of firing and sintering temperature near the melting point. So it is difficult to sinter LAS to dense sintered body. In this study, the petalite (Li2O.Al2O3.8SiO2) with good thermal properties, was taken as a base composition, and zironia was added in this composition to broaden the firing range, increase the mechanical strength, and control the thermal expansion. The thermal and mechanical properties were investigated. The results are as follows; 1. Zirconia phase was formed in LAS matrix and apparent porosity was decreased from 0.9% to 0.5%, and the mechanical strength was kincreased from 112 MPa to 190 MPa, by the densification of body. 2. The composition Li2O.Al2O3.8SiO2 has a negative thermal expansion, but the thermal expansion was changed from negative to positive with the densification and the increase of amount of synthesized zircon phase which had positive thermal expansion. The coefficient of thermal expansion, with the increase of the amount of additives, was low as -0.74~9.06$\times$10-7/$^{\circ}C$ in 20~$600^{\circ}C$, and 7.95~20.13$\times$10-7/$^{\circ}C$ in 20~80$0^{\circ}C$. 3. The mechanical strength of LZ15 (added with ZrO2.SiO2 15 wt%) composition thermal-shocked was stable in the temperature range of 0~$600^{\circ}C$, but rapidly decreased due to the increase of thermal expansion above $600^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.325-326
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• 2006

Using $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives and Si as a raw powder, the continuously porous in-situ $Si_2N_2O-Si_3N_4$ bodies were fabricated by multi-pass extrusion process and their microstructures were investigated depending on the addition of carbon (0-9wt%) in the mixture powder. The introduction of $Si_2N_2O$ fibers observed in the unidirectional continuous pores as well as in the pore-frame regions of the nitrided bodies can be an effective method in increasing the filtration efficiency. In the case of no carbon addition, the network type $Si_2N_2O$ fibers with high aspect ratio appeared in the continuous pores with diameters of 150-200 nm. However, in the case of 9wt% C addition, the fibers were found without any network type and had diameters of 200-250 nm.