• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1278-1282
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• 2004

수열처리법으로 nano-sized $CeO_2$ 입자를 $Al_3O_3$ 입자의 표면에 균일하게 코팅하여 $AL_2O_3/O_2$ composite 연마 입자를 제조하었다. 제조된 $Al_2O_3\CeO_2$ composite 입자의 뭍성을 TEM, XRD, zeta potential analyzer 및 particle size analyzer로 측징하였다. $Al_2O_3/CeO_2$ composite 입자와 구성된 슬러리와 비교 시료로서 $Al_2O_3$와 $CeO_2$ 입자를 혼합한 슬러리를 사용하여 thermal oxide film에 대한 연마특성을 평가하였다. 연마슬러리에 포함된 $A1_2O_3/CeO_2$ composite 입자와 $Al_2O_3$와 $CeO_2$ 혼합입자에서 나노 크기의 세리아 입자가 sub-micron 크기의 알루미나 입자의 표면에 균일하게 코팅되므로서 $Al_2O_3$ 단일 성분의 슬러리에 비해 removal rate(RR)는 106 nm/min, WIWNU는 $8\sim9%$, roughness는 $2.6{\AA}$의 향상된 연마 특성을 나타내었다. 알루미나 입자의 불규칙한 형상 때문에 $Al_2O3/CeO_2$ composite 슬러리와 $Al_2O_3$ 와 $CeO_2$ 혼합슬러리의 연마 특성이 비슷한 수준을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.1-8
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• 1986

The preparation and electrical conductivity of $\beta$-$Al_2O_3$ are investigated as a function of $Na_2O$ content from the-oretical composition of $\beta$-$Al_2O_3$ to that of $\beta$"-$Al_2O_3$. $\beta$-$Al_2O_3$ $\beta$"$Al_2O_3$$\alpha$-Al2O3 and ${\gamma}$-NaAlO2 phases appear in the calcined powder at 125$0^{\circ}C$ for 2 hours. The majoity phase is $\beta$-$Al_2O_3$ in sintered specimens at 155$0^{\circ}C$ and 1$650^{\circ}C$ for 30 mins respectively and ${\gamma}$-4NaAlO_2$ phase also exists when Na2O content is over 10.39w/o ${\gamma}$-4NaAlO_2$ phase does not affect the grain growth of $\beta$-$Al_2O_3$ in sintering at 155$0^{\circ}C$ but acts as a reactive liquid for the abnormal grain growth of $\beta$-$Al_2O_3$in sintering at 1$650^{\circ}C$ The electrical conduction of $\beta$-$Al_2O_3$is predominated by 4Na^+$ ion. Contribution of ionic con-ductivity to total conductivity is gradually decreased with increasing temperature at given oxygen pressure and to -tal conductivity is increased by positive hole due to interstitial oxygen with increasing oxygen pressure.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.243-249
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• 1993

Coated type Al2O3-SiC composite powders were synthesized by surface modification method. Transformation temperature to $\alpha$-Al2O3 of Al2O3 monolith was 115$0^{\circ}C$ whereas increased to 1200, 1250, 130$0^{\circ}C$ with increment of SiC content to 5, 15, 25wt%. Transformation temperature to $\alpha$-Al2O3 was lowered by $\alpha$-Al2O3 seeding. FTIR data analysis and electron micrographs showed that Al2O3 particles were effectively coated on SiC particles.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.185-190
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• 1999

An $Al_2O_3/Fe$ composite was synthesized through the double stage processes by a reaction sintering which requires simple process and equipments but provides near-net-shape, a reduction/oxidation process for 5 hrs at $650^{\circ}C$ was followed by sintering at $1200^{\circ}C$ to form an $Al_2O_3/Fe$ composite. The composite processed through the double stage sintering are mainly consists of $\alpha$-Fe and ${\alpha}Al_2O_3$ with minor amount of $FeAl_2O_4$, a spinnel structure which is known to prevent Fe from filling up the pores and good contact with $Al_2O_3/Fe$ particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.153-156
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• 2005

원자층 증착 (atomic layer deposit : ALD) 방식으로 증착한 $Al_2O_3$의 건식식각 특성을 연구하였다. 전자 싸이클로트론 공진 (electron cyclotron resonance : ECR) 방식의 건식식각장치에서 source power, bias power, 압력 그리고 $Cl_2$ 가스를 변수로 하여 $Al_2O_3$의 식각속도와 Poly-Si 의 $Al_2O_3$에 대한 선택비를 측정하였다. bias power가 감소할수록 그리고 압력이 증가할수록 $Al_2O_3$의 식각속도는 감소하였고 Poly-Si 의 $Al_2O_3$에 대한 선택비는 증가하였다. 이 특성을 이용하여 TiN/$Al_2O_3$/Poly-Si 구조의 캐패시터와 Periphery 회로영역의 레지스터를 $Al_2O_3$를 식각 정지막으로 이용하여 구현하였다.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.48-53
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• 2002

$Al_2O_3-SiC$ and $Al_2O_3-SiC$-TiC composite powders were prepared by SHS process using $SiO_2,\;TiO_2$, Al and C as raw materials. Aluminum powder was used as reducing agent of $SiO_2,\;TiO_2$ and activated charcoal was used as carbon source. In the preparations of $Al_2O_3-SiC$, the effect of the molar ratio in raw materials, compaction pressure, preheating temperature and atmosphere were investigated. The most important variable affecting the synthesis of $Al_2O_3-SiC$ was the molar ratio of carbon. Unreactants remained in the product among all conditions without compaction. The optimum condition in this reaction was $SiO_2$: Al: C=3: 5: 5.5, 80MPa compaction pressure under Preheating of $400^{\circ}C$ with Ar atmosphere. However there remains cabon in the optimum condition. The effect of $TiO_2$ as additive was investigated in the preparations of $Al_2O_3-SiC$. As a result of $TiO_2$ addition, $Al_2O_3-SiC$-TiC composite powder was prepared. The $Al_2O_3$ powder showed an angular type with 8 to $15{\mu}m$, and the particle size of SiC powder were 5~$10{\mu}m$ and TiC powder were 2 to $5{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.535-543
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• 1997

The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

• Journal of the Korean Ceramic Society
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• v.29 no.8
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• pp.667-673
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• 1992

The alumina-zirconia composite powders of core particle ZrO2 coated with Al2O3 were prepared by the hydrolysis-deposition of the mixed aluminum salt solution of Al2(SO4)3-Al(NO3)3-Urea. The effects of hydrolysis reaction and coating parameters on characteristics of coated powders and composites were also investigated. The degree of coating could be estimated from the ratio of tetra-/mono-ZrO2 present at the room temperature after heat-treating coated powders at 120$0^{\circ}C$ and the result of TEM observations. When the content of ZrO2 in the dispersed coating system, the coating time, and the volume ratio of water/solution were 50 mg/g, 180 min, and 5, respectively the coating efficiency was maximum (the ratio of tetra-/mono-ZrO2 was 87/13). The relative densities of coated Al2O3-ZrO2 composites sintered at 1$650^{\circ}C$ for 4 hrs were about 91~98% and the maximum ratio of tetra-/mono-ZrO2 in Al2O3-20wt% ZrO2 composites was 62/38.