• 한국세라믹학회지
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• 제39권1호
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• pp.68-73
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• 2002

$La_2O_3-Al_2O_3$(LAO)와 $La_2O_3-Al(OH)_3$(LAH)의 물질을 메카노케미칼 방법으로 분쇄하여 $LaAlO_3$세라믹스의 합성과 유전특성에 대하여 비교.조사하였다. $LaAlO_3$단일상을 얻기 위한 열처리온도는 LAO분말에서 $1300^{\circ}C$, LAH 분말은 $1000^{\circ}C$였다. 하소분말 중에 미 반응한 $La_2O_3$가 존재하면, 공기 중의 습기로 인하여 $La_2O_3$에서 $La(OH)_3$로 변하고,소결체의 밀도는 나빠진다. $1500^{\circ}C$에서 4시간 소결한 LAO 시료는 이론밀도의 97.3%이고, $1400^{\circ}C$에서 4시간 소결한 LAH시료는 98.3%였다. LAO시료는 입자의 크기가 불 균일하고 평균 입경은 4-5${mu}m$이며, LAH시료는 입자가 균일하고 크기가 $0.75{\mu}m$ 정도로 아주 작았다. 비유전율은 LAO와 LAH시료가 비슷하였고, 그 값은 약 22를 나타내었다. 그러나 LAH시료(0.0003)의 유전손실은 LAO시료 (0.001)보다 작았는데 이는 입자의 크기에 기인된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.942-946
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• 2004

The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• 한국세라믹학회지
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• 제34권6호
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• pp.629-635
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• 1997

The effects of the annealing atmospheres(O2, N2) and sintering additives that Bi2O3 is a major composition on the microwave dielectric and sintering propertie of (1-x)CaTiO3-xLaAlO3 system were investigated. The annealing atmospheres and the increase of annealing time after sintering did not affect the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) of (1-x)CaTiO3-xLaAlO3 system. However, the Q.f0 values of (1-x)CaTiO3-xLaAlO3 were very sensitive to annealing atmospheres. As the annealing time increased under O2 atmosphere the Q.f0 values of (1-x)CaTiO3-xLaAlO3 enhanced untill 10 hrs in 0.3$\leq$x$\leq$0.6 region, but degraded over that time. The increasing rate of Q.f0 value increased wth increasing x. On the other hand, as the annealing time increased under N2 atmosphere the Q.f0 values were constant in x$\leq$0.6 region, increased gradually in x$\geq$0.7 region. When 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% as sintering additives were added to (Ca0.5La0.5) (Ti0.5Al0.5)O3 (x=0.5) the sintering temperature of 1$600^{\circ}C$ was lowered to 140$0^{\circ}C$, and the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) were not nearly changed. The addition of 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% to (Ca0.5La0.5)(Ti0.5Al0.5)O3 made the Q.f0 values to be lower about 15% and 34%, respectively.

• 한국세라믹학회지
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• 제31권9호
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• pp.981-988
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• 1994

Crystallizable glasses with precipitation of celsian were prepared for the purpose of insulating dielectric layers for the devices such as integrated circuit substrates. Crystallization behavior of these glasses were studied by DTA, SEM, XRD analysis and by the measurement of dielectric properties. The base composition of the glass-ceramic consists in weight percent of 30% SiO2, 10% Al2O3, 26% BaO, 10% CaO, 10% ZnO, 8%TiO2 and 6% B2O3. 2-6 wt% Y2O3 were selected as the nucleating agent to promote monoclinic celsian formation. As a result, in barium-rich glasses containing 4~6wt% Y2O3 , monoclinic celsian was developed as major crystalline phase in the temperature range of 850~90$0^{\circ}C$. Also, the dielectric constant and quality factor of these glass-ceramics were about 9 and more than 1000, respectively.

• 한국결정성장학회지
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• 제8권4호
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• pp.626-633
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• 1998

본 연구에서는 고유전율의 저온소성용 글라스/세라믹을 제조하고자, SiO2-TiO2-RO계 결정화 유리를 제조하고 Al2O3를 필러 물질로 혼합하여 복합체를 제조하고 그 특성을 관찰하였다. 본 유리조성으로써 $900^{\circ}C$ 이하에서 결정화되는 유리의 제조가 가능하였고, RO (BaO, CaO, SrO)의 성분에 따라 결정화 온도는 변화함을 알 수 있었다. 본 유리조성에 $Bi_2O_3$를 플럭스로 첨가하고, 세라믹 필러로써 Al2O3를 사용하여 $860^{\circ}C$에서 소성함으로써 고유전율의 저온소성용 글라스/세라믹의 제조가 가능하였고, 이때 복합체의 밀도는 3.96g/$\textrm{cm}^3$ 이었고, 유전율은 17, Q.f 값은 600이었다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.158.2-158
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• 2000

• 마이크로전자및패키징학회지
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• 제6권3호
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• pp.37-43
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• 1999

고주파에서 사용하기 위한 $SiO_2-TiO_2-Bi_2O_3$-RO계(RO:BaO-CaO-SrO)를 주성분으로 하는 결정화 유리와 세라믹 충진재로서 $Al_2O_3$를 혼합하여 제조한 저온 소성용 Glass/Ceramic 유전체 모재와 Ag-thick film의 동시 소결시 발생할 수 있는 소결 부정합과 그 해소 방안을 연구하였다. 적층된 Glass/Ceramic 유전체 sheet와 Ag-thick film의 동시 소결시에 소결체는 sheet와 film의 densification rate 차 등에 의해 큰 camber 현상과 그로 인해 Ag-film에 crack이 발생하였다. 이를 교정하기 위해 유리 성분과 $Al_2O_3$성분이 혼합된 유전체 분말에 $B_2O_3$를 6, 8, 10, 12, 14 vol% 첨가한 결과를 보면 $B_2O_3$첨가량이 증가함에 따라 소결체의 camber 현상은 점점 크게 줄어들었으며 14 vol% 첨가된 경우에는 거의 관찰되지 않았다. 또한 $BaO_3$첨가량이 증가함에 따라 유전율($varepsilon_{r}$)은 점점 감소하였고 Q$\times$f 값은 크게 증가하는 경향을 나타내었으며 $\tau_{f}$ 값은 양(+)의 값으로 점점 크게 변하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.176-176
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• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.