• 한국재료학회지
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• 제12권8호
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• pp.595-599
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• 2002

A homogeneous and stable, amorphous-type, anorthite (CaO $Al_2$$O_3$ $2SiO_2$)powder was synthesized by an organic-inorganic steric entrapment route. Polyvinyl alcohol ( PVA) was used as an organic carrier for the precursor ceramic gel. The PVA content, its degree of polymerization and type of silica sol had a significant influence on the calcination and crystallization behavior of the precursors. For densifiction and crystallization at low temperature, porous and soft, amorphous-type anorthite powder was planetary milled for 20h. The milled powder crystallized to stable anorthite phase and densified to a relative density of 94% below $1000^{\circ}C$. In the development of crystalline phases of the planetary milled powder, omisteinbergite phase was unusually observed at $900^{\circ}C$, and then anorthite was observed at $950^{\circ}C$. The sintered anorthite had a thermal expansion coefficient of $4.6$\times$10^{-6}$ /$^{\circ}C$ and a dielectric constant of 7.5 at 1 MHz. Finally, the anorthite synthesized by the new process is expected to be an useful material for low-firing ceramic substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.310-310
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• 2007

Mg-Si-O계 세라믹스에 glass frit 조성을 첨가하여 저온에서의 소결 특성 및 마이크로파 유전 특성을 연구하였다. 기존의 Mg-Si-O계 세라믹스는 우수한 유전특성을 가지고 있으나 높은 소결온도로 인하여 LTCC용 기판 소재로 적용이 어려웠다. 본 연구에서는 MgO, $SiO_2$를 이용하여 $Mg_2SiO_4$을 합성한 후, $B_2O_3-ZnO-Na_2O-SiO_2-Al_2O_3$계 glass 조성을 20~40wt%로 첨가하여 소결온도를 감소시켜 LTCC 기판 소재로서의 적용성을 고찰하였다. glass frit 함량이 증가함에 따라 밀도($g/cm^3$) 및 유전율(${\varepsilon}_r$)은 증가하였고 품질계수($Qxf_0$)값은 감소하였다. glass frit 함량이 40wt%일때 $900^{\circ}C$에서 1시간 소결한 소결체의 유전톡성은 유전율 (${\varepsilon}_4$) = 6.5. 품질계수 ($Qxf_0$) = 4,000(GHz), 온도계수 $(\tau_t)\;=\;{\pm}\;10ppm/^{\circ}C$로 우수한 특성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.363-364
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• 2005

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 3종류 의 glass를 선정하고 filler로 $Al_2O_3$ 와 $TiO_2$를 사용하여 glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 lead-borosilicate(PBS), zinc-borosilicate(ZBS), bismuth-borosilicate(BBS) glass 조성을 사용하였고 1100~$1400^{\circ}C$에서 melting시킨 후 quenching하여 frit화하였다. $Al_2O_3$와 $TiO_2$ filler에 10~50 vol%로 glass frit을 각각 혼합한 후 600~$950^{\circ}C$에서 2시간 동안 소결한 결과 50 vol% glass frit 일 때 $900^{\circ}C$ 이하에서 소성이 가능하였다. 유전특성은 $900^{\circ}C$에서 $Al_2O_3$-50vol%PBS($\varepsilon_{r}$=8.8, $Q{\times}f_o$=4,900, $\tau_f$=-24), $Al_2O_3$-50vol% ZBS($\varepsilon_{r}$=5.7, $Q{\times}f_o$=17,800, $\tau_f$=-21), $Al_2O_3$-50vol%BBS($\varepsilon_{r}$=11.1, $Q{\times}f_o$= 2,080, $\tau_f$=-48), $TiO_2$-50vol%PBS($\varepsilon_{r}$=18.6, $Q{\times}f_o$=3,800, $\tau_f$=+135), $TiO_2$-50vol%ZBS($\varepsilon_{r}$=36.4, $Q{\times}f_o$= 7,500, $\tau_f$=+159), $TiO_2$-50vol%BBS($\varepsilon_{r}$=56.4, $Q{\times}f_o$=520, $\tau_f$=+119)을 나타내었다. 따라서 LTCC용 기판재료 및 마이크로파 유전체로 응용이 가능한 것으로 확인되었다.

• 한국세라믹학회지
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• 제18권3호
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• pp.171-181
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• 1981

Alkaline-earth porcelains have been prepared from mixture of kaolin, quartz, and synthetic calcines obtained by calcining a mixture of kaolin and more than two different kinds of alkaline-earth carbonates. They were magnesium, calcium and barium carbonates which are inexpensive and readily available. The vitrification behavior of the batch mixes was investigated in the firing range of 1240$^{\circ}$to 1380$^{\circ}$, in relation to the body compositions. It appeared that the density and the firing temperature depended largely on the content of alkaline-earth oxides in the body. These porcelains posses excellant dielectric properties, and are especially valuable as bases for deposited carbon resistors for which they were developed. An illustrative composition is 50% Dong Hwa kaolin, 22.4% Chang Shin quartz, 27.6% calcine. The composition of the calcine is 70% Dong Hwa kaolin, 10.7% BaCO3, 13.5% CaCO3, 5.8% MgCO3. The specific resistance of this body is $1.2{\times}10^{15}$ ohm-cm at 5$0^{\circ}C$, $2.5{\times}10^{14}$ ohm-cm 10$0^{\circ}C$, $2.5{\times}10^{13}$ ohm-cm at 15$0^{\circ}C$, $1.8{\times}10^{12}$ohm-cm at 20$0^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.110-110
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• 1999

Polyvinylidenefluoride (PVDF) is most used in piezoelectric polymer industry. Electrode effect on the electrical properties of PVDF has been investigated. al has been used due to fair adhesion for PVDF. Work function of metal plays an important role on the electrical properties of ferroelectrics for top and /or bottom electrode. However, Al has much lower work function than Pt or Au and so leakage current of Al/PVDF/Al may be large. Pt or Au has not been used for electrode of PVDF system due to poor adhesion. PVDF irradiated by Ar+ ion beam with O2 environment takes good adhesion to inert metal. Contact angle of PVDF to triple distilled water was reduced from 75$^{\circ}$ to 31$^{\circ}$ at 1$\times$1015 Ar+/cm2. Working pressure was 2.3$\times$10-4 Torr and base pressure was 5$\times$10-6 Torr. Pt was deposited by ion beam sputtering and thickness of pt film was about 1000$\AA$. in previous study, enhancing adhesion of Pt on PVDF was shown. in this study, effect of electrode on PVDF will be represented.

• Nuclear Engineering and Technology
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• 제52권7호
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• pp.1503-1510
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• 2020

Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al₂O₃) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 10³, 10⁴, and 10⁵ Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

• Transactions on Electrical and Electronic Materials
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• 제7권2호
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• pp.72-75
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(Zr/Ti=60/40) paste was made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at $0.6ton/cm^2$ showed the dense microstructure and thickness of about $76{\mu}m$. The relative dielectric constant increased with increasing the applied pressure. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at $0.6ton/cm^2$ were $16.6{\mu}C/cm^2$, 76.9 kV/cm, respectively.