• Restorative Dentistry and Endodontics
• /
• v.9 no.1
• /
• pp.101-106
• /
• 1983

It was the purpose of this study to investigate the fracture mode of dental amalgam by observing the crack propagation, and to relate this to the microstructure of the amalgam. Caulk 20th Century Regular, Caulk Spherical, Dispersalloy, and Tytin amalgam alloys were used for this study. After each amalgam alloy and Hg measured exactly by the balance was triturated by the mechanical amalgamator (Capmaster, S.S. White), the triturated mass was inserted into the cylindrical metal mold which was 4 mm in diameter and 12 mm in height and was pressed by the Instron Universal Testing Machine at the speed of 1mm/min with 120Kg. The specimen removed from the mold was stored in the room temperature for a week. This specimen was polished with the emery papers from #100 to #200 and finally on the polishing cloth with 0.06${\mu}Al_2O_3$ powder suspended in water. The specimen was placed on the Instron testing machine in the method similar to the diametral tensile test and loaded at the crosshead speed of 0.05mm/min. The load was stopped short of fracture. The cracks on the polished surface of specimen was examined with scanning electron microscope (JSM-35) and analyzed by EPMA (Electron probe microanalyzer). The following results were obtained. 1. In low copper lathe-cut amalgam, the crack went through the voids and ${\gamma}_2$ phase, through the ${\gamma}_1$ phase around the ${\gamma}$ particles. 2. In low copper spherical amalgam, it was observed that the crack passed through the ${\gamma}_2$ and ${\gamma}_1$ phase, and through the boundary between the ${\gamma}_1$ and ${\gamma}$ phase. 3. In high copper dispersant (Dispersalloy) amalgam, the crack was found to propagate at the interface between the ${\gamma}_1$ matrix and reaction ring around the dispersant (Ag-Cu) particles, and to pass through the Ag-Sn particles. 4. In high copper single composition (Tytin) amalgam, the crack went through the ${\gamma}_1$ matrix between ${\eta}$ crystals, and through the unreacted alloy particle (core).

• Journal of Conservation Science
• /
• v.26 no.2
• /
• pp.157-169
• /
• 2010

This study focused on the material characteristics and archaeometric relationship between the molten glass and bronze materials within the crucibles and gilt-bronze Bodhisattva statue excavated from the Ssangbukri site in Buyeo, Korea. Yellowish green to red brown vitreous material in the crucibles was identified as lead glass which contained scarce amount of BaO, and low $Al_2O_3$ and CaO. Metallic molten material was identified as bronze of copper-tin-lead alloy with low amount of impurities that indicated well-refined materials. Also, cassiterite was used for raw metal ore of tin. The Bodhisattva statue consisted of major copper with trace impurities in the core metal, and gold amalgam in the gilded layer. Though lead isotopic analysis showed contradictory results in each lead glass, bronze and Bodhisattva statue that required further examination, it could be stated that the statue was made in the Ssangbukri site based on the high-level technical skills of bronze production.

• Journal of Technologic Dentistry
• /
• v.38 no.3
• /
• pp.135-142
• /
• 2016

Purpose: The aim of this research was to evaluate the influence of different surface treatments on the shear bond strength of zirconia ceramic to composite resin. Methods: Seventy two cylinder-shape (diameter: 5 mm; height: 12 mm) blocks of experimental industrially manufactured Y-TZP ceramic were abraded with $125{\mu}m\;Al_2O_3$ particles and randomly divided into 4 groups. All the materials were categorized as group Gc(control group - composite resin veneering on zirconia surface), Gr - composite resin veneering after surface treatment of Rocatec system (3M ESPE, Seefeld, Germany) group; Gz - composite resin veneering after surface treatment of Zirconia primer (Z-primer, Bisco, U.S.A) group; Gm - composite resin veneering after surface treatment of zirconia primer (Monobond plus, ivoclar vivadent AG, Liechtenstein) group. Two different zirconia primers and Rocatec system were used to zirconia cylinders (n=16) onto the zirconia surface. Zirconia specimens, polished and roughened, were pretreated and composite bilayer cylinders bonded using conventional adhesive techniques. Results: Shear bond strengths were analyzed using single-factor ANOVA(p<0.05). Bond strength values achieved after airbone particle abrasion and zirconia surface pre-treatments(p<0.05). Conclusion: Shear bond strength tests denmonstrated that zirconia primer is a viable method to improved bond strength between zirconia ceramic core and veneering composites.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.289-289
• /
• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Science of Emotion and Sensibility
• /
• v.25 no.2
• /
• pp.31-44
• /
• 2022

Power and status are core elements that distinguish social classes and strongly influence social interaction. Although they are the foundation of social influence, they have different origins (Fragale et al., 2011). While power usually is based on personal ability or legal, institutional legitimacy, status is rooted in voluntary support from other people. Hence, whereas people with power often demonstrate egoistic behavior, those with high status show relationship-based altruism (Hasty & Maner, 2020). People recognize the difference between the two and have stereotypical beliefs or expectations about the people's behavior with high power or status (Magee, 2009). The current research tested how the judgment on social exclusion, the unique social influence of power and status, changes depending on the actor's power and status. We constructed social exclusion scenarios in which we manipulated actors' power and status and asked participants to rate an actor's pain and behavioral fairness. Participants' ratings showed that the actor's fairness and pain would differ depending on the actor's power and status (Expt. 1), which is consistent with the stereotypes above. In particular, the significant effects of the actor's anonymity in the cases of low power and high status (Expts. 2A, 2B) provide further evidence for the proposal that status but not power originates from voluntary support from others.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.69-74
• /
• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• Korean Journal of Mineralogy and Petrology
• /
• v.35 no.3
• /
• pp.283-298
• /
• 2022

In this study, we investigated the mineral geochemistry of the albite-spodumene pegmatite, associated exogreisen, and wall rock from the Boam Li deposit, Wangpiri, Uljin, Gyeongsangbuk-do, South Korea. The paragenesis of the Boam Li deposit consists of two stages; the magmatic and endogreisen stages. In the magmatic stage, pegmatite dikes mainly composed of spodumene, albite, quartz, and K-feldspar intruded into the Janggun limestone formation. In the following endogreisen stage, the secondary fine-grained albite along with muscovite, apatite, beryl, CGM(columbite group mineral), microlite, and cassiterite were precipitated and partly replaced the magmatic stage minerals. Exogreisen composed of tourmaline, quartz, and muscovite develops along the contact between the pegmatite dike and wall rock. The Cs contents of beryl and muscovite and Ta/(Nb+Ta) ratio of CGM are higher in the endogreisen stage than the magmatic stage, suggesting the involvement of the more evolved melts in the greisenization than in the magmatic stage. Florine-rich and Cl-poor apatite infer that the parental magma is likely derived from metasedimentary rock (S-type granite). P₂O₅ contents of albite in the endogreisen stage are below the detection limit of EDS while those of albite in the magmatic stage are 0.28 wt.% on average. The lower P₂O₅ contents of the former albite can be attributed to apatite and microlite precipitation during the endogreisen stage. Calcium introduced from the adjacent Janggun formation may have induced apatite crystallization. The interaction between the pegmatite and Janggun limestone is consistent with the gradual increase in Ca and other divalent cations and decrease in Al from the core to the rim of tourmaline in the exogreisen.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.115-115
• /
• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Information Display
• /
• v.23 no.4
• /
• pp.12-21
• /
• 2022

반도체 기반 양자점 (QD)소재와 CsPbX3 (X=Cl, Br, I)기반 perovskite 양자점 또는 나노결정 소재(PNC)는 매우 우수한 양자효율과 좁은 발광 선폭으로 고색재현성 디스플레이 색변환 소재 또는 발광 소재로서 각광을 받고 있다. 그러나, 기존 화학적 합성법을 통해 제조되는 QD 및 PNC 소재는 취약한 열 및 화학적 안정성으로 인해 장기 내구성의 개선이 요구된다. 이들 QD 및 PNC 소재는 모두 완전 무기 소재인 산화물 기반 유리 소재내에 생성이 가능하며, 이를 통해 장기 내구성을 근본적으로 개선할 수 있다. 반도체 기반 QD 함유 유리소재 (QDEG)의 경우, 유리 내 core/shell 구조를 가진 QD의 생성으로 양자효율의 향상이 가능했으나, 콜로이드 기반 양자점 (cQD)과 달리 다중 shell의 형성이 어려워 양자효율이 제한되고, 발광 선폭이 넓어 고색재현성 디스플레이용 색변환 소재로 적용되기에는 아직 한계가 있다. 한편, Perovskite 양자점 (또는 나노결정) 함유 유리소재 (PNEG) 소재는 QDEG과 달리 콜로이드 기반의 PNC (c-PNC)가 가지는 우수한 양자효율과 20 nm 수준의 좁은 선폭을 유리 내에서도 가지며, c-PNC 대비 열적, 화학적 및 광학적 안정성이 획기적으로 향상되어 실질적인 응용 가능성을 높이고 있다. 특히, 일반적인 용융-급랭법으로 제조하여 대량생산에 용이하고, 분말 또는 판상 등 다양한 형태로의 제작이 가능한 장점이 있다. 현재까지 제조된 PNEG의 최대 PL-QY는 450 nm 여기 시 녹색 및 적색에서 약 60% 수준이며, Al₂O₃ 분말을 이용할 경우 최대 80% 수준까지 달성이 가능하다. 또한, PNEG과 blue LED를 이용하여 백색 LED를 구현할 경우 color filter를 적용하지 않을 때, NTSC 대비 최대 약 130 % 수준의 높은 색재현 영역을 보여 주고 있으며, 실제 LCD용 BLU로 적용 시 기존 상용 c-QD 소재와 동등 이상의 색재현 영역을 보이고 있어, 실질적인 응용 가능성이 매우 높음을 확인하였다. PNEG의 상업적인 응용을 위해서는 몇 가지 추가적인 연구 개발이 필요하다. 기존 c-QD 또는 c-PNC는 나노 수준 크기의 입자가 액상에 분산된 형태로 입도 제어가 용이하나, PNEG의 경우 분말 제조 시 유리 형성 후 분쇄를 통해 제조되며, 입도가 대개 수십 ㎛ 이하로 작아질 경우 PL-QY가 저하되어, 향후 잉크젯 공정 응용을 위해서는 고효율의 분말 제조공정 개발이 필요하다. 또한, 유리 소재의 경우 절연체로서 기존 QD 소재 대비 electro-luminescence(EL) 소자의 활성층으로 사용하는데 제약이 있어 PNEG을 이용한 EL 소자 제작에 대한 연구도 필요하다. 마지막으로, 기존 c-PNC 소재와 같이 Pb가 함유되지 않은 PNEG 소재의 개발이 선결되어야 할 것으로 판단된다. 이와 같은 해결 과제들에도 불구하고, PNEG 소재는 기존 c-QD 소재 대비 매우 우수한 안정성을 기반으로 고품위 고색재현 디스플레이용 색변환 소재로서 다양한 응용에 활용될 수 있을 것으로 기대된다.